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  • 1
    Electronic Resource
    Electronic Resource
    Automatic shutter control for molecular-beam epitaxial reactors (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1246-1247 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple, flexible, and relatively inexpensive microcomputer-controlled shutter system intended, principally, for use with molecular-beam epitaxial reactors is described. Eight pneumatic shutters, each one controlling the molecular-beam emission of a corresponding effusion cell, can be operated in any combination simultaneously or sequentially. Such a system has been built and is being used to grow heterojunction and superlattice structures of binary and ternary III-V alloys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139707
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  • 2
    Electronic Resource
    Electronic Resource
    Band-edge discontinuities of strained-layer InxGa1−xAs/GaAs heterojunctions and quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1339-1341 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conduction-band discontinuity (ΔEc ) and the band-gap offset (ΔEgh) of InxGa1−xAs/GaAs multiple quantum wells grown on GaAs substrates by molecular beam epitaxy are investigated for 0〈x〈0.3. The band gap of strained InxGa1−xAs , determined from the excitonic transition of room-temperature transmission spectra, is found to be linearly dependent on x and is in good agreement with the calculated values. The band-gap offset is found to be ΔEgh =1.15x eV. The conduction-band offset, compiled from published data, is ΔEc =0.75x eV, and thus (ΔEc /ΔEgh)=0.65 independent of x.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101649
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Chirping of electroabsorption modulation in InGaAsP (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1100-1102 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oscillatory behaviors in the electroabsorption (EA) spectra around the fundamental edge of InGaAsP are measured for the first time. Chirping of EA modulation is obtained from these EA spectra and the corresponding electrorefraction spectra calculated from the Kramers–Kronig transform. This result is applied to the selection of material band gap for applications of laser light modulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101669
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Semiconductor waveguide phase comparator (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1297-1298 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A phase comparator based on two cascaded semiconductor electroabsorption waveguide modulators is demonstrated for the first time. The operation principle of this device is derived and experimentally confirmed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100002
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  • 5
    Electronic Resource
    Electronic Resource
    Electroabsorption effects in InxGa1−xAs/GaAs strained-layer superlattices (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 475-477 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroabsorption of strained-layer Inx Ga1−x As/GaAs superlattice structures grown by molecular beam epitaxy on GaAs substrates was experimentally investigated. Its spectral characteristics were found to be similar to those of Franz–Keldysh electroabsorption of bulk semiconductor materials, and suggest that the widths of ground-state electron and hole minibands might be larger than the maximum tilt of the potential well caused by an applied voltage. We attribute the electroabsorption of such superlattices to photon-assisted tunneling between ground-state electron and heavy hole minibands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102770
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Strain-compensated InAsP/GaInP multiple quantum wells for 1.3 μm waveguide modulators (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 90-92 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that high-quality strain-compensated InAsxP1−x/GayIn1−yP multiple quantum wells (MQWs) can be grown by gas-source molecular beam epitaxy (GSMBE) on InP substrates. Very sharp satellite peaks in double-crystal x-ray diffraction are obtained from a p-i-n waveguide structure consisting of 21 periods of 93 A(ring)/135 A(ring) InAs0.4P0.6/Ga0.13In0.87P MQWs. The surface-normal electroabsorption exhibits a significant quantum-confined Stark effect (QCSE) near 1.3 μm wavelength with a field-dependent absorption coefficient change of 6000 cm−1 and a very small zero-bias residual absorption. Electroabsorption waveguide modulators fabricated using similar material exhibit a large optical saturation threshold in excess of 10 mW incident optical power at 32 meV detuning energy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116768
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  • 7
    Electronic Resource
    Electronic Resource
    Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1833-1835 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the electroabsorption property of InAsP/InP strained multiple quantum wells (MQWs), grown by gas-source molecular beam epitaxy, for 1.3 μm modulator applications. Very sharp excitonic absorption at room temperature was observed. Electroabsorption measurements performed for a ring-shaped p-i-n diode, consisting of 10-period InAs0.41P0.59(100 A(ring))/InP(150 A(ring)) strained MQWs, reveal a significant red shift of the absorption peak with increasing reverse biases due to the quantum-confined Stark effect. This large energy shift (e.g., ∼18 meV at an external field of 57 kV/cm) is well accounted for in the "effective well-width'' model. The change of the absorption coefficient at a 22 meV detuning is as large as 3510 cm−1 with a small residual absorption, which can be very useful for 1.3 μm waveguide modulators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110806
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    The efficiency of grating coupling of two thin-film waveguides (1975)
    Springer
    Optical and quantum electronics 7 (1975), S. 459-464 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We have demonstrated experimentally the coupling between two thin-film waveguides with a sputter-etched grating as the phase-matching element. A maximum coupling efficiency of only 27% has been measured. Using the weak interaction perturbation analysis, we have found that the loss due to the scattering into the substrate modes is a dominator factor responsible for the measured low efficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619323
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