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  • 1
    Electronic Resource
    Electronic Resource
    Generation of the C"6"0 radical cation via electron transfer reaction. A pulse radiolysis study
    Amsterdam : Elsevier
    Chemical Physics Letters 203 (1993), S. 555-559 
    Details
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0009-2614(93)85309-C
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  • 2
    Electronic Resource
    Electronic Resource
    Interband transitions in InAsxP1−x/InP strained multiple quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1645-1647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the optical study of the interband transitions in InAsxP1−x/InP strained-layer multiple quantum wells grown by gas-source molecular beam epitaxy. Low-temperature photoluminescence, photoluminescence excitation, and room temperature photomodulated transmission measurements were performed to investigate optical interband transitions. In addition to transitions associated with the heavy-hole and the light-hole bands, a transition involved with the spin-orbit split-off band was observed. We also observed spectral linewidth broadening due to compositional inhomogeneity and layer-thickness fluctuations from the sample using short-period superlattices as the well materials. Calculations based on the envelope-function approximation and phenomenological deformation potential theory, including both band nonparabolicity and strain-induced valence-band mixing, were compared with experimental data to identify the optical transitions between quantized states in the wells. We found good agreement between theory and experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351683
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  • 3
    Electronic Resource
    Electronic Resource
    Optical property of InAsP/InP strained quantum wells grown on InP (111)B and (100) substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4673-4679 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAsP/InP strained multiple quantum wells (MQWs) were grown on InP (111)B and (100) substrates by gas-source molecular-beam epitaxy. Specular surfaces were obtained under optimized growth conditions on InP (111)B substrates miscut 1° to the 〈110〉 direction. Photoluminescence, absorption and photoluminescence excitation spectra were taken for InAsP/InP strained MQWs at low temperature. Distinct optical transitions were resolved. Energy-level calculations were carried out for both (111)B and (100) MQWs by taking into account the differences in elastic deformation, strain-induced band-edge shift, valence-band anisotropy, and the piezoelectric effect. The peaks were successfully assigned as different interband excitonic transitions. The best fit of the energy-level calculation to the experimental spectra suggests that the valence-band offset ratios (Qv=ΔEv/ΔEg) for (111)B and (100) InAsP/InP heterostructures are 0.35 and 0.30, respectively. This dependence on the substrate orientation was accounted for in terms of the strain-induced band-edge shift.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355920
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  • 4
    Electronic Resource
    Electronic Resource
    Coupled resonator vertical-cavity laser diode (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3020-3022 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the operation of an electrically injected monolithic coupled resonator vertical-cavity laser which consists of an active cavity containing InxGa1−xAs quantum wells optically coupled to a passive GaAs cavity. This device demonstrates modulation characteristics arising from dynamic changes in the coupling between the active and passive cavities. A composite mode theory is used to model the output modulation of the coupled resonator vertical-cavity laser. It is shown that the laser intensity can be modulated by either forward or reverse biasing the passive cavity. Under forward biasing, the modulation is due to carrier induced changes in the refractive index, while for reverse bias operation the modulation is caused by field dependent cavity enhanced absorption. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125220
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  • 5
    Electronic Resource
    Electronic Resource
    Carbon doping and etching of AlxGa1−xAs (0≤x≤1) with carbon tetrachloride in metalorganic vapor phase epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3600-3602 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon doping and the parasitic growth-rate reduction with carbon-tetrachloride (CCl4) in AlxGa1−xAs was studied in the entire Al composition range for metalorganic vapor phase epitaxial growth. The doping efficiency in AlGaAs was found to increase by two orders of magnitude when the Al composition in AlxGa1−xAs changed from 0 to 1. The parasitic growth rate reduction, however, decreased by a factor of 15 when x changed from 0 to 1. This reduction of growth rate was confirmed to be caused by the etching of the material from the surface by Cl radicals cracked from CCl4. This strong compositional selectivity of the doping and etching has potential implications for lateral definition of growth on patterned surfaces. The doping and etching behaviors were also studied as a function of the growth temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119245
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  • 6
    Electronic Resource
    Electronic Resource
    Valence band offset of GaAs/GaAs0.68P0.32 multiple quantum wells (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2078-2080 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence measurements have been performed under hydrostatic pressure on GaAs/GaAs0.68P0.32 strained multiple quantum well samples grown by gas-source molecular beam epitaxy. The pressure induced crossover of the first confined electron state in the GaAs wells against the conduction band (001) X minima in the GaAs0.68P0.32 barriers has been observed, which allows a direct spectroscopic determination of the valence band offset for the heterostructure. As the result we obtain the unstrained valence band offset as 0.09±0.02 eV, which corresponds to an approximate 77:23 distribution of the energy gap difference in the conduction and valence bands, respectively, for the GaAs/GaAs0.68P0.32 system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109484
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  • 7
    Electronic Resource
    Electronic Resource
    Pressure dependence of the intersubband transition in strained In0.15Ga0.85As/GaAs multiple quantum wells (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 475-477 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the intersubband transitions on pressure in strained In0.15Ga0.85As/GaAs multiple quantum wells has been studied in two samples with well widths of 8 and 15 nm, respectively, with photomodulated transmission spectroscopy by using a diamond anvil cell. The pressure coefficients of the energies for the intersubband transitions were found to depend significantly on the well widths and to be smaller than that of the band gap of constituents in bulk form. These results suggested that the critical thickness for strained In0.15Ga0.85As/GaAs layer should be smaller than 15 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103670
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  • 8
    Electronic Resource
    Electronic Resource
    Scalability of small-aperture selectively oxidized vertical cavity lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 823-825 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the threshold properties of small area selectively oxidized vertical cavity lasers. Agreement for threshold gain versus laser size is found using the experimental intrinsic threshold voltage matched with a gain theory, as compared to a two-dimensional optical cavity simulation. Our analysis indicates the increasing threshold current density of small area lasers arises from both increasing threshold gain and the concomitant increasing leakage current. We further show that the optical loss can be reduced for lasers with areas as small as 0.25 μm2 while maintaining sufficient transverse optical confinement by displacing the apertures longitudinally away from the cavity and reducing the oxide thickness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118234
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  • 9
    Electronic Resource
    Electronic Resource
    Barrier-layer-thickness control of selective wet oxidation of AlGaAs for embedded optical elements (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2870-2872 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective wet oxidation of AlGaAs layers can be used to form embedded optical elements, such as buried lenses and current control apertures in vertical cavity structures. Oxidation rates of buried Al0.94Ga0.06As layers were controlled by varying the thickness of GaAs barrier layers between layers of Al0.94Ga0.06As and Al0.98Ga0.02As. This phenomenon can be attributed to the superposition of a vertical oxidation component due to species diffusing through the barrier layer and a constant lateral oxidation component. The magnitude of the vertical component is controlled by the GaAs barrier thickness, which determines the concentration of additional oxidizing species in the Al0.94Ga0.06As layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119028
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  • 10
    Electronic Resource
    Electronic Resource
    Homoepitaxial growth of InP on (111)B substrates by gas-source molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 281-283 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP has been homoepitaxially grown on both exactly (111)B oriented and misoriented substrates by gas-source molecular beam epitaxy. The optimal growth condition for obtaining a mirrorlike surface was found to be a substrate misorientation of 0.5°–1° toward 〈110〉, a substrate temperature of 470 °C, and a V/III incorporation ratio close to unity. The unity V/III ratio was established readily by monitoring the specular beam intensity of reflection high-energy electron diffraction when the phosphorus beam was modulated, similar to migration enhanced epitaxy. The InP epilayers with specular surfaces are of high quality as characterized by x-ray diffraction, Hall measurements, and low-temperature photoluminescence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108990
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