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  • 1
    Electronic Resource
    Electronic Resource
    Influence of thermal effects on the eigenmodes of gain-guided diode laser arrays (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1697-1700 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that the inclusion of junction-heating effects in the numerical modeling of a gain-guided diode laser array produces significant changes in the mode characteristics of such devices. This is evidenced as alterations in the near- and far-field emission patterns and modal gains of the high-order array eigenmodes. Our experimental measurements of the emission patterns from free-running and injection-seeded gain-guided diode laser arrays show very good agreement with the results of our model and illustrate the influence of these thermal effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338065
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  • 2
    Electronic Resource
    Electronic Resource
    Modal frequencies of vertical-cavity lasers determined by an effective-index model (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 22-24 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previously, an effective-index optical model was introduced for the analysis of lateral waveguiding effects in vertical-cavity surface-emitting lasers. We show that the resultant transverse equation obtained in that model is almost identical to the one typically obtained in the analysis of dielectric waveguide problems, such as a step-index optical fiber. In this letter, we extend the effective-index model to obtain predictions of the discrete frequencies of the microcavity modes. As an example, we apply the analysis to vertical-cavity lasers that contain thin-oxide apertures. The model intuitively explains our experimental data and makes quantitative predictions in good agreement with a highly accurate numerical model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126864
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  • 3
    Electronic Resource
    Electronic Resource
    Two-element phased array of antiguided vertical-cavity lasers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3754-3756 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate antiguided coupling of two adjacent vertical-cavity surface-emitting lasers (VCSELs), obtaining a 1×2 phase-locked array at 869 nm. The lateral index modification required for antiguiding is achieved by a patterned 3 nm etch performed between two epitaxial growths. In contrast with prior coupled VCSELs, adjacent antiguided VCSELs can emit in phase and produce a single on-axis lobe in the far field. Greater than 2 mW of in-phase output power is demonstrated with two VCSELs separated by 8 μm. Moreover, phase locking of two VCSELs separated by 20 μm is observed, indicating the possibility of a promising class of optical circuits based upon VCSELs that interact horizontally and emit vertically. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125445
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  • 4
    Electronic Resource
    Electronic Resource
    Mode control in broad-area diode lasers by thermally induced lateral index tailoring (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 260-262 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Broad-area diode lasers that emit in the fundamental mode under short-pulse excitation are observed to evolve into higher order lateral modes with increasing pulse width. Our data provide convincing evidence that the lateral refractive index profile arising from junction heating plays a dominant role in determining the lateral emission modes in these devices for long-pulse and cw operation. Furthermore, we show that an external focused laser heat source can be used to modify the lateral index profile in a broad-area laser and thus control the lasing mode. In particular, we demonstrate that (approximately-less-than)50 mW of absorbed heating power is sufficient to counteract the effects of internal junction heating and restore fundamental mode operation at cw injection currents as high as 1.5 Ithreshold. Our results suggest that fundamental mode operation of broad-area devices at high-power levels might be realized by incorporating a tailored lateral index profile to compensate for internal junction heating.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99487
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  • 5
    Electronic Resource
    Electronic Resource
    Interferometric ring diode lasers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1375-1377 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first demonstration of interferometric ring diode lasers. These devices show a sharply peaked light versus current curve with cw output powers up to 8 mW. The output emission is single-frequency with side-mode-rejection ratios up to 30 dB.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107542
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  • 6
    Electronic Resource
    Electronic Resource
    Coherent beams from high efficiency two-dimensional surface-emitting semiconductor laser arrays (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 890-892 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated and operated large two-dimensional (2D) arrays of phase-locked surface-emitting semiconductor lasers. The arrays were fabricated by reactive ion beam etching of epitaxial Fabry–Perot resonators comprising GaAs/AlGaAs quantum wells surrounded by AlAs-AlGaAs quarter-wave mirrors. Different arrays corresponding to different pixel size (2–5 μm) and spacing (1–2 μm) were produced to investigate evanescent coupling between pixels. The arrays were photopumped so that the array size could be conveniently varied from 1×1, 2×2,... up to 20×20. Except for the 1×1 which emits a circular pattern, all arrays exhibit a well-defined four-lobed far-field pattern in agreement with our theoretical analysis of the optical modes which predicts domination by the 2D out-of-phase eigenmode. As a consequence this pattern can be understood with simple Fraunhofer diffraction theory. The angular spread of the lobes, determined by the periodicity of the array elements, is 10° for the array with element size/spacing of 4/1 μm. The widths of the lobes are 6.7° for the 2×2 and narrow to 3.2° with increasing number of pixels in the array. The array exhibits a sharp onset for lasing, operation on a single longitudinal mode, and a linewidth which narrows to ∼1 A(ring) with increasing array size. The differential power efficiency is as high as 70%. These observations provide further impetus and guidance for the development of 2D laser diode arrays.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104468
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  • 7
    Electronic Resource
    Electronic Resource
    Electron/hole energy shifts in narrow GaAs/AlAs quantum wells: Inhomogeneous broadening due to half-monolayer well-width fluctuations (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1404-1406 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use absorption, photoluminescence, and x-ray diffraction spectra of two GaAs/AlAs type II heterostructures, whose GaAs well thicknesses differ by (approximately-equal-to)4 A(ring) to obtain a direct measurement of the individual quantum confinement energy shifts of the heavy hole, light hole, and electron levels. We find that excitonic absorption linewidths are dominated by inhomogeneous broadening that arises from half-monolayer well-thickness fluctuations. For self-consistency these shifts are applied to separately determine the individual valence-band and conduction-band offsets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103448
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  • 8
    Electronic Resource
    Electronic Resource
    Scalability of small-aperture selectively oxidized vertical cavity lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 823-825 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the threshold properties of small area selectively oxidized vertical cavity lasers. Agreement for threshold gain versus laser size is found using the experimental intrinsic threshold voltage matched with a gain theory, as compared to a two-dimensional optical cavity simulation. Our analysis indicates the increasing threshold current density of small area lasers arises from both increasing threshold gain and the concomitant increasing leakage current. We further show that the optical loss can be reduced for lasers with areas as small as 0.25 μm2 while maintaining sufficient transverse optical confinement by displacing the apertures longitudinally away from the cavity and reducing the oxide thickness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118234
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  • 9
    Electronic Resource
    Electronic Resource
    Stable-mode operation of leaky-mode diode laser arrays at high pulsed and cw currents (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 452-454 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report stable pulsed and cw fundamental mode operation for ten-stripe leaky-mode diode laser arrays which use the confinement factor effect for mode control. Lasing occurs in the fundamental mode for pulsed operation (≤1 μs) up to 10× threshold and for cw operation up to 3.4× threshold. For cw operation, a thermal decoupling of the outer array stripes broadens the far field slightly but does not affect the lasing mode order. Our two-dimensional model of these devices reproduces this decoupling of the outer array stripes when thermal effects are included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104604
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Highly accurate etching of ridge-waveguide directional couplers using in situ reflectance monitoring and periodic multilayers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1-3 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel periodic multilayer structure has been used in conjunction with in situ reflectance monitoring to give ±10 nm endpoint detection during reactive-ion-beam etching. The method has been used to fabricate ridge-waveguide directional couplers in GaAs/AlGaAs having coupling lengths within 100 μm of the desired 650 μm value. The added loss due to coupling length error was only 0.3 dB per guide. The method is directly applicable to photonic integrated circuits employing complex optical routing of waveguides, directional couplers and y-junctions where total height of the waveguide plays a key role in performance of the circuit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108805
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