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  • 1
    Electronic Resource
    Electronic Resource
    Erratum: "Optical investigation of quaternary GalnAsSb/AlGaAsSb strained multiple quantum wells'' [Appl. Phys. Lett. 67, 3432 (1995)] (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2591-2591 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116792
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  • 2
    Electronic Resource
    Electronic Resource
    Differential reflectance spectroscopy using sample rotation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1798-1800 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Differential reflectance (DR) is one of the modulation spectroscopies, and its modulation signal arises from the differential reflectance due to the spatial inhomogeneity of the sample. There are several methods to achieve the difference reflectance and we report here an experimental configuration using sample rotation. This configuration looks similar to that adopted previously by reflectance difference spectroscopy (RDS), however in the DR experiments we trace the signal synchronizing with the fundamental rotation frequency (f ) of the sample. In RDS one used the second harmonic frequency of the rotation (2f ) as the reference frequency. We check this method with an InGaAs/GaAs quantum well and an AlGaAs/GaAs heterojunction bipolar transistor (HBT). Both samples show well resolved spectral features which are in good agreement with photoreflectance measurements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149671
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  • 3
    Electronic Resource
    Electronic Resource
    New shallow donors in high-purity silicon single crystal (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2084-2086 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution photothermal ionization spectroscopy has been performed on n-type high-purity silicon crystals. Two new shallow donors with binding energies of 36.61 and 36.97 meV, respectively, are observed for the first time, in addition to lithium (Li), lithium-oxygen complex [D(Li,O)], phosphorus (P), and arsenic (As) donors. These new shallow donors show similar spectral features to Li, D(Li,O), P, and As, which implies that they are also hydrogenic shallow donors. These new complex centers are probably generated during crystal growth. In addition, previously unresolved transitions related to very high excited states of phosphorus as well as the above-mentioned new shallow donors, have also been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102090
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence investigations of Cd1−xMnxTe under hydrostatic pressure (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1070-1074 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence of Cd1−xMnxTe with x=0.25, 0.40, and 0.60 is investigated at 77 K and different pressures. The pressure coefficients of the photoluminescence bands Cd0.75Mn0.25Te and Cd0.6Mn0.4Te are found to be positive and the magnitudes are about 8×10−3 eV/kbar, which is in good agreement with the pressure coefficients of the interband transition. The pressure coefficient of the photoluminescence bands for Cd0.4Mn0.6Te is found to be −6×10−3 eV/kbar, which is quite different from the pressure coefficient of the interband transition. The possible transition mechanism is discussed in terms of group theory and crystal field theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351781
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of strained CdTe/Cd0.633Mn0.367Te single quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5941-5945 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the photoluminescence studies of the strained CdTe/CdMnTe single quantum wells (SQWs) with large manganese of 0.367. The conduction band-offset ratio Qc of this structure is found to be 0.92±0.01. The band filling effect in this SQW is discussed in detail. Our experiments show that the excitonic transition dominates the whole measured temperature (20–200 K) in the well. The broadening of linewidth with temperature can be well explained by exciton-longitudinal-optical (LO) phonon coupling model and a quantitative approach is presented to explain the experimental fact that the strength of the exciton-LO phonon coupling is quite stronger in SQWs than that of multiple quantum wells. We demonstrate the main mechanism of the decrease in radiative QW recombination efficiency is due to the thermal excitation of excitons out of CdTe well, followed by nonradiative recombination in the CdMnTe barriers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363589
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  • 6
    Electronic Resource
    Electronic Resource
    Erratum: Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells [J. Appl. Phys. 78, 5696 (1995)] (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4474-4474 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362717
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5696-5700 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the dependence on the excitation power and temperature of the photoluminescence emission from a quaternary Ga0.75In0.25As0.04Sb0.96/Al0.22Ga0.78As 02Sb0.98 strained multiple- quantum-well structure grown by molecular-beam epitaxy. Sharp exciton resonances are observed up to room temperature and have been attributed to localized excitons for temperatures ≤80–100 K and to free excitons at higher temperatures up to room temperature by a comparative study with temperature-dependent absorption spectroscopy. We conclude that the dominant luminescence quenching mechanism in this quaternary system is mainly due to the trapped excitons thermalizing from the localized regions below 100 K, and the thermal carrier activation from the first electron and heavy-hole subbands to the second electron and heavy-hole subbands at higher temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359628
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  • 8
    Electronic Resource
    Electronic Resource
    Absorption of n-type Ge, Si quantum wells for normal incident radiation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5183-5185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The theory of electron intersubband infrared absorptions for n-type Si/GeSi and Ge/GeSi quantum wells in the waveguide structure is presented in order to compare with recently obtained experimental results. The absorption coefficient as a function of the polarization angle of incident light has been investigated by considering the degeneracies and the occupancies of the different valleys for conduction band. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359754
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  • 9
    Electronic Resource
    Electronic Resource
    Enhancement of topical 5-aminolaevulinic acid delivery by erbium:YAG laser and microdermabrasion: a comparison with iontophoresis and electroporation (2004)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 151 (2004), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background  5-aminolaevulinic acid (ALA) is used as a protoporphyrin IX-precursor for the photodynamic therapy of superficial skin cancer and cutaneous metastases of internal malignancies. However, the permeability of hydrophilic ALA across the skin is very low.Objectives and methods  The objective of this study was to optimize and enhance the in vitro skin permeation of ALA by two resurfacing techniques: erbium:yttrium-aluminium-garnet (Erb:YAG) laser and microdermabrasion. Light microscopic changes in pig skin caused by these techniques were also compared. The electrically assisted methods, iontophoresis and electroporation, were also used to facilitate ALA permeation across laser- or microdermabrasion-treated skin.Results  Among the modalities tested in this study the Erb:YAG laser showed the greatest enhancement of ALA permeation. The laser fluence was found to play an important role in controlling the drug flux, producing enhancement ratios from 4-fold to 246-fold relative to the control. The skin permeation of ALA across microdermabrasion-treated skin was approximately 5–15-fold higher than that across intact skin. Both the ablated effect of the stratum corneum (SC) and ALA flux were proportional to the treatment duration of microdermabrasion. The application of iontophoresis or electroporation alone also increased the ALA permeation by approximately 15-fold and 2-fold, respectively. The incorporation of iontophoresis or electroporation with the resurfacing techniques caused a profound synergistic effect on ALA permeation.Conclusions  This basic study has encouraged the further investigation of ALA permeation by laser or microdermabrasion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2133.2004.06051.x
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  • 10
    Electronic Resource
    Electronic Resource
    Temperature-dependent exciton behavior in quaternary GaInAsSb/AlGaAsSb strained single quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2139-2141 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the temperature-dependent exciton behavior in a quaternary Ga0.67In0.33As0.01Sb0.99/Al0.25Ga0.75As 0.2Sb0.98 strained single-quantum-well (SQW) structure by photoluminescence spectroscopy. Strong exciton resonances are observed and have been attributed to localized excitons below 80 K and to free excitons at high temperatures. Nevertheless, we show that the experimental results of stronger exciton–phonon coupling in the quaternary SQW structure would lead to partial ionization of free excitons at temperatures above 125 K, in good agreement with the line-shape analysis of the luminescence spectra which clearly shows the presence of band-to-band recombination. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361072
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