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  • 1
    Electronic Resource
    Electronic Resource
    Surface recombination velocity in a silicon optical waveguide (1983)
    Springer
    Applied physics 31 (1983), S. 45-49 
    Details
    ISSN: 1432-0630
    Keywords: 42.82 ; 73
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of the varying infrared absorption by free carriers in a silicon waveguide during intermittent electron bombardment are used to study the surface recombination velocitys. The same values for s are obtained for heat-treated and untreated samples, which supports the theory that electron beam irradiation in itself has a dehydrating effect. Other experiments show thats is not dependent on the energy of the impinging electrons in the range 16–23 keV. Finally, the temperature dependence ofs in gold-doped silicon is estimated. Ifs is written in the forms=s 0(293/T)x,x is found to be 2.1±0.2 in the temperature interval 261K≦T≦309K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617187
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  • 2
    Electronic Resource
    Electronic Resource
    Capacitance of semiconductor-electrolyte junction and its frequency dependence (1996)
    Springer
    Applied physics 63 (1996), S. 481-486 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 73.40.Mr
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  The frequency dependent capacitance of semiconductor-electrolyte junction and its relationship to the surface roughness of the semiconductor and the ions in the electrolyte are discussed. Due to very low mobility of the ions, the observed capacitance can be dominated by the Helmholtz double-layer of the electrolyte rather than the space charge layer of the semiconductor. The capacitance will also depend on the frequency. This, often observed power-law frequency dependence of capacitance is ascribed to the contribution of constant phase angle impedance. The power-law exponent can easily be related to the fractal dimension if the semiconductor surface can be described by fractal geometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01571678
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  • 3
    Electronic Resource
    Electronic Resource
    Normal-metal hot-electron bolometer with Andreev reflection from superconductor boundaries (1999)
    Springer
    Journal of experimental and theoretical physics 88 (1999), S. 598-602 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract This paper describes the design and experimental testing of a high-sensitivity hot-electron bolometer based a film of normal metal, exploiting the Andreev reflection from superconductor boundaries, and cooled with the help of a superconductor-insulator-normal metal junction. At the measured thermal conductivity, G≈6×10−12 W/K, and a time constant of τ=0.2 μs, and a temperature of 300 mK, the estimated noise-equivalent power NEP=5×10−18 W/Hz1/2, assuming that temperature fluctuations are the major source of noise. At a temperature of 100 mK, the thermal conductivity drops to G≈7×10−14 W/K, which yields NEP=2×10−19 W/Hz1/2 at a time constant of τ=5 μs. The microbolometer has been designed to serve as a detector of millimeter and FIR waves in space-based radio telescopes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.558834
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  • 4
    Electronic Resource
    Electronic Resource
    Exciton polaritons in quantum-dot photonic crystals (2000)
    Springer
    Physics of the solid state 42 (2000), S. 1756-1765 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We present a theory of the photonic band structure of three-dimensional arrays of quantum dots (QDs). A system of Maxwell’s and material equations is solved and the dispersion equation for exciton-polaritons is derived making allowance for a nonlocal dielectric response of quasi-zero-dimensional excitons confined in QDs. The reflection and transmission coefficients are calculated for a single plane, a pair of planes and a stack of equidistant planes of QDs. Two different approaches are proposed to perform a calculation. One of them is based on recurrent equations relating the reflection coefficients for N + 1 and N planes, while in the other approach the Bloch solutions for an infinite QD lattice are used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1309465
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  • 5
    Electronic Resource
    Electronic Resource
    Dynamics of four-wave mixing on excitons in a quantum optical microcavity (1996)
    Springer
    JETP letters 64 (1996), S. 795-801 
    Details
    ISSN: 1090-6487
    Keywords: 42.65.Hw ; 42.55.Sq ; 71.35.Cc ; 78.66.Db
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A theory of degenerate four-wave mixing in a semiconductor optical cavity with quantum wells is constructed. The nonlinear response of a microcavity can be four to five orders of magnitude stronger than that of an isolated quantum well. For P 2 E-and P 3-type nonlinearities the damped diffracted signal oscillates with a period determined by the Rabi splitting. For a biexcitonic mechanism of nonlinearity, the signal contains damped overtones of the Rabi splitting and the biexciton binding energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567250
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  • 6
    Electronic Resource
    Electronic Resource
    Superfluidity of indirect biexcitons in superlattices (1999)
    Springer
    Journal of experimental and theoretical physics 88 (1999), S. 980-986 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Instability in a system of interacting quasi-two-dimensional excitons in a type II superlattice of a finite thickness due to attraction between oppositely-directed excitonic dipoles in neighboring layers has been discovered. A stable system is that of indirect quasi-two-dimensional biexcitons formed by indirect excitons with dipole moments oriented in opposite directions. The radius and binding energy of indirect biexcitons has been calculated. A collective spectrum of a system of such biexcitons with a weak quadrupole interaction between them has been studied. Feasibility of Bose condensation, the density n s(T) of the superfluid component, and a phase transition to the superfliud state in a low-density system of indirect biexcitons have been analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.558880
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  • 7
    Electronic Resource
    Electronic Resource
    Electronic thermal properties of the interface between a normal metal and a high-temperature superconducting material (2000)
    Springer
    Journal of experimental and theoretical physics 90 (2000), S. 1050-1057 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The electron thermal flux and electron thermal conductivity of the interface between a normal metal and a high-temperature superconductor (HTSC) are calculated using quasiclassical equations. Calculations are made for various values of the interface transparency and various orientations of the axes of a HTSC crystal. It was shown that compared with an interface between a normal metal and an “ordinary” superconductor (s-type symmetry, isotropic order parameter), the thermal conductivity of an HTSC-normal-metal interface is substantially higher and has a nonactivation dependence. The thermal properties were calculated for various interface models, including mirror and diffuse, and also for various potential barrier profiles. An analysis is made of the possibility of using devices based on normal-metal-HTSC interfaces for bolometric and microrefrigerator applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.559194
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  • 8
    Electronic Resource
    Electronic Resource
    Interaction of planar polymer Schottky barrier diodes with gaseous substances
    Amsterdam : Elsevier
    Sensors and Actuators B: Chemical 20 (1994), S. 71-77 
    Details
    ISSN: 0925-4005
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0925-4005(93)01171-Y
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  • 9
    Electronic Resource
    Electronic Resource
    Hydrogen passivation of nitrogen acceptors confined in CdZnTe quantum well structures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2329-2332 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deactivation of nitrogen acceptors confined in Cd0.96Zn0.04Te/Cd0.86Zn0.14Te quantum well structures by hydrogen (deuterium) have been investigated by optical spectroscopy. Hydrogen (deuterium) was incorporated into the samples by annealing them in an atmosphere of hydrogen and cadmium. The annealing temperature and annealing time were varied to determine the optimum condition at which the maximum passivation is achieved without causing structural degradation. The emissions related to nitrogen acceptors were monitored in low-temperature photoluminescence measurements in order to deduce the passivation effect. The results indicate that hydrogen can effectively neutralize the nitrogen acceptors in cadmium zinc telluride quantum well structures. It is estimated that as much as 90% of the nitrogen acceptors can be passivated by this method. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388569
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  • 10
    Electronic Resource
    Electronic Resource
    Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2351-2356 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoconductors based on V-grooved Al0.5Ga0.5As/GaAs multiple quantum wires (QWR) were fabricated. The geometric structure of the QWR was carefully characterized by transmission electron microscopy and spatially resolved microphotoluminescence measurements. Infrared response at 9.2 μm is observed from the photocurrent spectrum measured at 80 K. It is attributed as the intersubband transition in the quantum wire region. Due to the effective quantum confinement from the two (111)-surfaces forming the V groove, the overlapping between the ground state in the QWR and the one in the vertical quantum well is very small. This explains the weak photocurrent signal from the QWR photodetector. Theoretical design for a better wave function overlapping and optical coupling is outlined from the analysis of two-dimensional spatial distributions of the wave functions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1339857
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