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  • 1
    Electronic Resource
    Electronic Resource
    Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 442-444 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin InGaAs/InP single quantum well structures, grown by chloride transport vapor levitation epitaxy, have been investigated by low-temperature photoluminescence (PL). Well-resolved multiple peaks are observed in the PL spectra, instead of an expected single peak. We attribute this to monolayer (a0/2=2.93 A(ring)) variations in quantum well (QW) thickness. Separate peak positions for QW thicknesses corresponding to 2–6 monolayers have been determined, providing an unambiguous thickness calibration for spectral shifts due to quantum confinement. The PL peak corresponding to two monolayers occurs at 1.314 eV, corresponding to an energy shift of 524 meV. Experimental data agree very well with a simple effective mass theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100946
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  • 2
    Electronic Resource
    Electronic Resource
    Formation of laterally propagating supersteps of InP/InGaAs on vicinal wafers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 472-474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and demonstrate a technique for artifically bunching the atomic steps on a vicinal substrate to form supersteps of almost arbitrary height. The process involves the etching of a grating of parallel grooves on the surface of a vicinal substrate followed by epitaxial growth that fills the grooves. Steps of height proportional to the period of the grating and the substrate misorientation angle are formed. The technique is demonstrated on a macroscopic scale for the InP/InGaAs material system using chloride transport vapor levitation epitaxy, resulting in InGaAs wire-like structures confined both horizontally and vertically by InP. The growth of quantum wires and laterally periodic superlattices should be possible using this technique with proper scaling of parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101856
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  • 3
    Electronic Resource
    Electronic Resource
    Filamentary structure and transport in corrugated InGaAs/InP superlattices grown by vapor levitation epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1222-1226 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Periodic stimulation of a growth instability on (001) vicinal surfaces of InP and InGaAs induces a corrugated growth interface. When this interface is incorporated into a superlattice the two-dimensional quantum well coalesces into a periodic structure comprised of InGaAs filaments buried in an InP matrix. We have measured the transport in this system by contactless submillimeter wave spectroscopy and show that the electron motion is confined to these filaments, and we have determined the electron density and mobility in these submicrometer filaments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343467
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  • 4
    Electronic Resource
    Electronic Resource
    Investigation of many-body effects in one-side modulation-doped InP-InGaAs heterostructure (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1105-1107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A one-side modulation-doped quantum well of InGaAs lattice matched to InP has been used to investigate many-body effects in a quasi-two-dimensional (2D) electron gas. The sample was grown by vapor levitation epitaxy (VLE). Low-temperature photoluminescence (PL) measurements were carried out under different optical excitation intensities using 5145 A(ring) line from an argon ion laser. By increasing the laser intensity over five orders of magnitude a 13.2 meV blue shift in the PL line was observed to occur for a single asymmetric quantum well having a 2D electron gas density as low as 0.9×1011 cm−2. The observed blue shift is explained in terms of the reduction of both band bending (of the order of 1.8 meV) and many-body effects (of the order of 11.4 meV) due to the reduction of the 2D electron gas density in the quantum well. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115727
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  • 5
    Electronic Resource
    Electronic Resource
    Nearly ideal electronic surfaces on naked In0.53Ga0.47As quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1002-1004 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have discovered that hydroxide-coated In0.53Ga0.47Ag has the lowest known surface recombination velocity of any III-V semiconductor. To demonstrate the excellent electronic quality of such interfaces, we have measured the quantum shifts in the room-temperature luminescence spectrum of "naked'' In0.53Ga0.47As quantum wells (i.e., quantum wells with one face uncovered) in the thickness range 15–50 A(ring). These nearly ideal electronic surfaces should allow the fabrication of lateral quantum confinement structures that operate at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99226
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  • 6
    Electronic Resource
    Electronic Resource
    Role of step-flow dynamics in interface roughening and in the spontaneous formation of InGaAs/InP wire-like arrays (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 611-613 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate a morphological instability that causes an InGaAs/InP multiquantum well structure grown on a vicinal (001) InP surface to spontaneously evolve into an array of InGaAs quasi-one-dimensional filaments buried in an InP matrix. To explain this behavior, we propose a step-flow growth model involving different lateral growth velocities for heteroepitaxy and homoepitaxy. A computer simulation based on the model agrees closely with the experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103613
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  • 7
    Electronic Resource
    Electronic Resource
    InGaAs shallow junction fabrication using Langmuir–Blodgett film diffusion source (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2132-2134 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new source of cadmium diffusion in In0.53Ga0.47As has been developed. Langmuir–Blodgett (LB) deposited monolayers of cadmium arachidate have been used as a source of cadmium. The LB film has been characterized by grazing incidence infrared spectroscopy and Auger electron spectroscopy. Acceptor profiles obtained by differential Hall technique are presented. Highly doped (NA =2×1019 cm−3) shallow (xj ≈0.1–0.4 μm), p+-n junctions are obtained. Mesa-type p-i-n diodes with 125 μm diameter, ideality factor =1.3, Idark =5 nA at 20 V reverse bias, and Vbreakdown =30 V have been fabricated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102994
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  • 8
    Electronic Resource
    Electronic Resource
    Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 867-869 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that macroscopic, as opposed to microscopic, steps can be obtained on a semiconductor vicinal surface when a perturbation has been "printed'' on it, prior to epitaxial growth. This generic crystal growth concept has been studied here with the GaAs/AlGaAs system using organometallic chemical vapor deposition. The details of step formation, stabilization, and subsequent propagation have been investigated with scanning electron microscopy. Regular, sawtooth-like growth patterns have been obtained, with periodic growth rate differences at the step edges. This novel lateral patterning technique was employed to fabricate arrays of quantum wire-like heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101624
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  • 9
    Electronic Resource
    Electronic Resource
    Selective growth of InGaAs/InP heterojunction bipolar transistors with a buried subcollector (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1193-1195 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the fabrication of an InGaAs/InP heterojunction bipolar transistor (HBT) with a reduced base-collector overlap area using selective epitaxy techniques. The process uses planarizing growth by chloride-transport vapor-phase epitaxy (VPE) to create a buried subcollector layer, followed by selective regrowth by organometallic VPE. The quality of the regrowth over the planarized substrates is evident from the dc characteristics of the HBT which show an ideality factor η=1.05 for the base-emitter junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107644
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  • 10
    Electronic Resource
    Electronic Resource
    Neuropeptide Y antagonises secretagogue evoked chloride transport in rat jejunal epithelium (1988)
    Springer
    Pflügers Archiv 413 (1988), S. 38-42 
    Details
    ISSN: 1432-2013
    Keywords: Neuropeptide Y ; Vasoactive intestinal polypeptide ; Substance P ; Gastrointestinal epithelia
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Neuropeptide Y (NPY) inhibits electrogenic Cl secretion in rat jejunal epithelium under voltage clamp conditions. This effect is dependent upon endogenous eicosanoid formation since it is blocked by the cyclooxygenase inhibitor, piroxicam, which itself has an inhibitory action upon chloride secretion. A number of chloride secretagogues have been examined for their ability to restore the antisecretory effects of NPY. Data presented here shows that NPY responsiveness is restored, in piroxicam pretreated tissues, by vasoactive intestinal polypeptide (VIP), forskolin, prostaglandin E2 (PGE2) isobutyl-1-methyl-xanthine (IBMX) and dibutyryl cAMP added prior to the neuropeptide. While all these agents cause chloride secretion by elevating intracellular cAMP, NPY is also effective in inhibiting the secretory effects of carbachol (CCh) and substance P (SP), agents believed to act by raising intracellular calcium (Cai). Although there is evidence that NPY can inhibit adenylate cyclase, its ability to attenuate chloride secretion brought about by secretagogues acting through both adenylate cyclase and calcium mechanisms, implies that NPY has either a more general fundamental mechanism or has multiple interactions with different second messenger systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00581226
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