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  • 1
    Electronic Resource
    Electronic Resource
    Cathodoluminescence imaging of patterned quantum well heterostructures grown on nonplanar substrates by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 776-778 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report cathodoluminescence (CL) imaging and transmission electron microscopy (TEM) studies of patterned GaAs/AlAs quantum well (QW) heterostructures grown by molecular beam epitaxy on periodically corrugated substrates. Faceting and surface diffusion during crystal growth result in significant lateral variations in QW thickness which translate quantum size effects into lateral band-gap patterning. The CL images directly display lateral periodic modulation in quantum well thickness and indicate the existence of two lateral potential wells formed at the bottom and apex of corrugations. Emission wavelengths are in agreement with TEM data on the patterned structures. Such periodic patterned QW heterostructures should be useful for the realization of arrayed one- and zero-dimensional semiconductor quantum structures, particularly lateral superlattice heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102684
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  • 2
    Electronic Resource
    Electronic Resource
    Optical spectroscopy of semiconductor quantum wires (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1641-1650 
    Details
    ISSN: 0392-6737
    Keywords: III–V compounds and systems ; III–V semiconductors ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We investigated the optical properties of excitons in quasi-onedimensional semiconductor quantum structures by photoluminescence and photoluminescence excitation. High-quality GaAs/Al x Ga1−x As heterostructures were grown using low-pressure organometallic chemical vapour deposition (OMCVD) on non-planar substrates. The experimentally observed subband separations are in good agreement with a theoretical calculation of the quantum-confined eigenstates, which includes the mapping of the crescent-shaped wire obtained on TEM micrographs. Additionally, a temperature dependence study of excitonic spectra reveals the dominant role of potential and size fluctuations in localizing the excitons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457257
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  • 3
    Electronic Resource
    Electronic Resource
    Patterned quantum well semiconductor laser arrays (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 304-306 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-threshold arrays of GaAs/AlGaAs patterned quantum well semiconductor lasers were grown by molecular beam epitaxy on periodically corrugated substrates. Uncoated arrays of ∼14 lasers operated with threshold curents of 3.6 mA per laser and emitted up to 375 mW from a single facet under pulsed conditions. The array lasers were not phase locked because of the tight optical confinement in each array channel. A red shift of 300 A(ring) (55 meV) was observed in the emission wavelength of the patterned array compared to that of nonpatterned lasers made on the same substrate. The red shift results from migration effects in the growth on the nonplanar surface, which leads to thicker quantum well active regions at the array channels. This effect illustrates the usefulness of the growth of quantum well heterostructures on nonplanar substrates for lateral band-gap engineering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100994
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  • 4
    Electronic Resource
    Electronic Resource
    Low-loss multiple quantum well GaInAs/InP optical waveguides (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1737-1739 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Propagation losses as low as 0.24±0.06 dB/cm are demonstrated for single-mode, GaInAs/InP multiple quantum well rib waveguides at 1.52 μm wavelength. We show that reproducibly low losses (≤0.6 dB/cm for rib widths ≥3 μm) can be maintained over a large chip area (9.4×5 mm2). Origins of the loss are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101275
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  • 5
    Electronic Resource
    Electronic Resource
    Integrated external cavity GaAs/AlGaAs lasers using selective quantum well disordering (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 540-542 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Integrated external cavity GaAs/AlGaAs single quantum well lasers were fabricated by selective quantum well disordering. Lasers with 2.07-mm-long passive sections and 0.48-mm-long active sections had threshold currents of 33 mA, compared to 9.8 mA for lasers without passive sections. Lasing data indicate a residual modal loss of 11 cm−1 in the passive sections, consistent with direct waveguide loss measurements. Control composite structures with a nondisordered quantum well in the passive sections showed significantly higher threshold currents and a large red shift of as much as 11.4 nm in the lasing wavelength compared to lasers without a passive cavity. This red shift is the main reason for the reduced resonant losses in integrated external cavity lasers with a nondisordered quantum well in the passive section.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101848
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  • 6
    Electronic Resource
    Electronic Resource
    Single quantum wire semiconductor lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2715-2717 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single quantum wire GaAs/AlGaAs injection lasers were fabricated using organometallic chemical vapor deposition on V-grooved GaAs substrates. The quantum wire active region has a crescent-shaped cross section ∼100 A(ring) thick and less than 1000 A(ring) wide. Amplified spontaneous emission and lasing spectra of the quantum wire lasers exhibit effects due to transitions between quasi-one-dimensional subbands separated by ∼10 meV. Single quantum wire laser structures with tight optical confinement exhibited threshold currents as low as 3.5 mA for uncoated devices at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101934
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  • 7
    Electronic Resource
    Electronic Resource
    Fabrication of a two-dimensional phased array of vertical-cavity surface-emitting lasers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1198-1200 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful fabrication of a two-dimensional phase-locked array of vertical-cavity surface-emitting lasers. The array was comprised of more than 160 vertical-cavity surface-emitting lasers of 1.3 μm diameter with a separation of less than 0.1 μm between each lasing element. The array had a 25 μm diameter and each of the elemental lasers was located on a two-dimensional rectangular lattice. The threshold current of the two-dimensional array 45 mA yields a threshold current of 280 μA for an elemental laser. The far-field beam angle of the array was as narrow as 7°, and the spectral purity was found to be good enough to allow for a clear holographic image reconstruction of a holographic memory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102558
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  • 8
    Electronic Resource
    Electronic Resource
    Spatial mode structure of broad-area semiconductor quantum well lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 205-207 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spatial mode characteristics of gain-guided broad-area quantum well lasers grown by organometallic chemical vapor deposition were investigated experimentally. GaAs/AlGaAs quantum well lasers grown on 6°-off (100) oriented substrates exhibit excellent material uniformity, which allows study of their modal behavior. Gain-guided broad-area lasers fabricated on such uniform material demonstrate nearly ideal gain-guiding modal behavior. These lasers tend to lase in the fundamental mode near threshold and emit single-lobed far-field patterns. In these well-behaved broad-area lasers, we have identified the mechanism for degradation in the spatial coherence at high pumping levels as the onset of higher order lateral modes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101009
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  • 9
    Electronic Resource
    Electronic Resource
    Probing carrier dynamics in nanostructures by picosecond cathodoluminescence (2005)
    [s.l.] : Nature Publishing Group
    Nature 438 (2005), S. 479-482 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Picosecond and femtosecond spectroscopy allow the detailed study of carrier dynamics in nanostructured materials. In such experiments, a laser pulse normally excites several nanostructures at once. However, spectroscopic information may also be acquired using pulses from an electron beam in a ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature04298
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  • 10
    Electronic Resource
    Electronic Resource
    Near-field scanning optical microscopy studies of V-grooved quantum wire lasers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1619-1621 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed near-field scanning optical microscopy studies of GaAs/AlGaAs V-grooved quantum wire lasers at room temperature were performed. We measured the spectrally resolved near-field intensity distributions, emitted from the complex epitaxially grown optical waveguide in the V groove with a spatial resolution of ∼0.1 μm. Distinct regions emitting at different wavelengths were identified, and a heart shaped modal distribution of less than 0.5 μm in diameter was measured and well matched the calculated light distribution of this structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122224
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