Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2005-2009
  • 1995-1999  (26)
  • 1997  (8)
  • 1995  (18)
Material
Years
  • 2005-2009
  • 1995-1999  (26)
Year
  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article discusses the electrical characterization of low-temperature intrinsic Si films deposited by remote plasma-enhanced chemical vapor deposition. Metal-oxide-semiconductor (MOS) capacitors were fabricated on films deposited over a range of temperatures. Conventional MOS measurements such as capacitance versus voltage, breakdown voltage, Zerbst plot, and charge-to-breakdown were used to analyze the capacitors. The results of these measurements not only yielded information about the electrical properties of the films, but also led to conclusions regarding structural quality and the presence of metal contamination. This, coupled with the fact that capacitor fabrication requires only a simple, moderate-thermal budget process, makes MOS capacitor measurements an attractive technique for the characterization of low temperature epitaxial Si films. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1638-1640 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-oxide-semiconductor (MOS) capacitance–voltage (C–V) characteristics in the accumulation mode have been measured and simulated for polycrystalline Si gate MOS capacitors with various oxide thicknesses (40–200 A(ring)) on p-type (100) Si substrates. The discrepancy between experimental data and theoretical prediction by classical MOS theories is clarified by taking quantization effects into account. The experimentally determined "effective dielectric thicknesses'' in the semiconductors are found to be in good agreement with the values calculated from quantization effects for MOS capacitors with thinner oxides (〈80 A(ring)). The effective dielectric thicknesses at oxide electric fields of 2–6 MV/cm have been determined to be 2–3 A(ring) larger for the quantum mechanical case than for the classical case.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2951-2953 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High (2 eV) and low kinetic energy supersonic jets of disilane as well as ultrahigh vacuum chemical vapor deposition have been employed to grow epitaxial silicon thin films on Si(100) wafers at temperatures ranging from 500 to 650 °C. The growth properties and film uniformity are compared in order to characterize the high energy technique. High translational energy disilane supersonic jets increase the efficiency of deposition by increasing the disilane reaction probability. The growth profiles from the high energy jet are sharply peaked due to a focusing of the precursor along the jet centerline. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2184-2186 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reactions of atomic hydrogen with boron-doped Si(100) were studied using temperature programmed desorption (TPD). In addition to adsorbing at surface sites, hydrogen penetrates into boron-doped Si(100) samples and gets trapped by forming subsurface boron–hydrogen complexes. H2-TPD spectra, taken after exposure to atomic hydrogen, showed, in addition to the well known dihydride (680 K) and monohydride (795 K) desorption features, two peaks at 600 and 630 K due to decomposition of subsurface boron–hydrogen complexes. Increasing total hydrogen uptake with increasing dosing temperature (1.7 ML at 300 K, 4.2 ML at 500 K), suggests an activation barrier for subsurface hydrogen uptake. A quantitative correlation between boron concentration and subsurface hydrogen uptake is shown. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1223-1225 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrashallow junctions (∼60 nm) are obtained using low energy BF2 (5 keV) implants in crystalline Si. The variation of junction depth as a function of the dose rate is studied for doses of 1×1014 and 1×1015 cm−2. Boron diffusion is retarded in the tail region for the higher dose rates and consequently the junction depth decreases as compared to the lower dose rates. The residual defect density after a 950 °C, 10 s anneal for a dose of 1×1015 cm−2 is reduced for the higher dose rate as compared to the lower dose rate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 9 (1997), S. 2429-2442 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Navier–Stokes equations have been solved, by a pseudospectral method, for pressure-driven flows between a no-slip wavy wall and a slip flat wall. Periodic boundary conditions were used in the streamwise and spanwise directions. The physical domain is mapped into a computational domain that is a rectangular parallelepiped using a nonorthogonal transformation. The pseudospectral solution procedure employed in previous studies, for example, Lam and Banerjee [Phys. Fluids A 4, 306 (1992)], eliminated the pressure and solved for the wall–normal velocity and vorticity. The other velocity components were calculated using the definition of vorticity, and the continuity equation. This procedure leads to oscillations in the pressure field when solutions were attempted in the mapped computational domain. To overcome the problem, the procedure had to be modified and the pressure solved for directly using a fractional time step technique. For the cases examined here, these modifications resulted in spectral accuracy being maintained. Flow over sinusoidal wave trains has been simulated and the results compare well with available experiments. The simulations show significant effects of the wavy boundary on the mean flow and the turbulence statistics. The mean velocity profile differs substantially from the profile for the flat-wall case, particularly in the buffer region where the fluid is under the influence of both the wavy wall and the slip boundary. The velocity fluctuations in the streamwise direction decrease in the buffer region. This effect becomes more pronounced when the wave amplitude increases. Most of the redistribution of energy, from the streamwise direction to the spanwise and wall–normal directions, occurs in a thin layer close to the boundary, downstream of the wave troughs. The energy primarily redistributes into spanwise fluctuations. High shear stress regions form downstream of the wave troughs, and streaky structures and quasi-streamwise vortices are also seen to initiate in these regions. The length of the streaks, and the extent of the quasi-streamwise vortices, scale with wave length for the two cases investigated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 7 (1995), S. 1095-1106 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The motion of solid particles near the wall in a turbulent boundary layer was investigated experimentally in a water flume by flow visualization techniques and by LDA. The particles were of polystyrene (specific density ∼1.05) with diameters ranging from 100 to 900 μm. Results show that particle motion, as well as entrainment and deposition processes, are controlled by the action of coherent wall structures, which appear to be funnel vortices. The behavior of the particles is consistent with the motion and effects of such vortices. The vortices appear to cause the formation of particle streaks near the wall, to create suitable conditions for particle entrainment, and to assist in particle deposition by conveying them from the outer flow to the wall region. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 9 (1997), S. 3786-3807 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Particle-laden turbulent flows, at average volume fraction less than 4×10−4, in open channels are numerically simulated by using a pseudospectral method. The motion of particles, that are large compared with the dissipative length scale, is coupled to the fluid motion by a method that generates a "virtual" no-slip boundary on the particle surface by imposition of an external force field on the grid-points enclosed by the particle. Cases for both moving and stationary particles, lying on the wall, are simulated. The investigations focus on particle-turbulence interaction. It is found that particles increase turbulence intensities and Reynolds stress. By examining higher order turbulence statistics and doing a quadrant analysis of the Reynolds stress, it is found that the ejection-sweep cycle is affected—primarily through suppression of sweeps by the smaller particles and enhancement of sweep activity by the larger particles. An assessment of the impact of these findings on scalar transfer is made, as enhancement of wall heat/mass transfer rates is a motivation of the overall work on this subject. In the cases considered, comparison of the calculations with an existing experiment was possible, and shows good agreement. At present, due to limitations in available computational resources, this method cannot be used when the particle diameter is smaller than the smallest turbulence scale (e.g. the Kolmogorov length scale) and the volume fraction is of the same order as studied in this paper, i.e. between 10−3 and 10−4. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 6631-6640 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Rotationally-resolved Beutler–Fano line shapes observed in the photoabsorption spectrum of the (2,0) band of the 3pπuf 1Σu+←X 3Σg− Rydberg system of O2 are interpreted using a coupled-channel Schrödinger equations model. It is found that the f 1Σu+ state is indirectly predissociated by the B 3Σu− continuum, and that the f←X transition borrows oscillator strength primarily from dipole-allowed transitions into the mixed Rydberg-valence states of 3Σu− symmetry. Both the predissociation linewidth and oscillator strength of the (2,0) resonance are controlled by the spin-orbit interaction between the 1Σu+ and 3Σu− components of the 3p-complex. There is some evidence for a destructive quantum interference between the transition amplitude borrowed from the 3pπuE 3Σu−←X 3Σg− transition and that borrowed weakly from the f 1Σu+←b 1Σg+ transition through spin-orbit mixing between the b 1Σg+ and X 3Σg− states. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...