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  • 1995-1999  (6)
  • 1990-1994
  • 1970-1974
  • 1995  (6)
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  • 1995-1999  (6)
  • 1990-1994
  • 1970-1974
Year
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  • 1
    Electronic Resource
    Electronic Resource
    A Raman spectroscopic study of the Si, Be, and C incorporation in InxGa1−xAs relaxed layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4690-4695 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of high concentrations ((approximately-greater-than)1019 cm−3) of Si, Be, and C in InxGa1−xAs relaxed layers has been studied as a function of In content (x≤0.16) by Raman spectroscopy of local vibrational modes (LVM). The frequencies of the Raman peaks resulting from the convolution of several split modes shift to lower values as the In content is increased, the carbon acceptor (CAs) local mode frequency showing the strongest dependency on x. Features attributed exclusively to the influence of In on second-neighbor sites are identified only in the Si-doped samples. The transverse and longitudinal modes expected from the splitting of a LVM of CAs with one In first neighbor are not observed in layers with x up to 0.085. A new calibration for the BeGa, CAs, and Si-related LVM leads to the conclusion that In increases the total electrical activation of Si and favors its incorporation on group-III sublattice sites. In contrast, no influence of In on the Be or C doping activation has been detected. The analysis of the CAs LVM spectra supports the view that in InxGa1−xAs CAs is preferably surrounded by Ga instead of In atoms for x≤0.085. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359816
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of the bonding of carbon acceptors in InxGa1−xAs for x〈0.1 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2676-2678 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The local environment of CAs acceptors in InxGa1−xAs has been determined from the localized vibrational modes (LVMs) of both isolated CAs impurities and H–CAs pairs using infrared (IR) absorption and Raman scattering techniques. In as-grown layers, a single LVM due to CAs was observed which broadened and shifted to lower energies with increasing x. The introduction of hydrogen led to the formation of H–CAs pairs and a single antisymmetric A1− mode (stretch) and a single symmetric A+1 mode (XH) were observed for all samples. All the LVMs were identified with carbon in CAsGa4 cluster configurations implying that less than 5% of the detectable carbon atoms are present in clusters incorporating one or more CAs–In bonds. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113122
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Realization and modeling of a pseudomorphic (GaAs1−xSbx–InyGa1−yAs)/GaAs bilayer-quantum well (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2639-2641 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have realized a (GaAs1−xSbx-InyGa 1−yAs)/GaAs bilayer-quantum well (BQW), which consists of two adjacent pseudomorphic layers of GaAs1−xSbx and InyGa1−yAs sandwiched between GaAs barriers. Photoluminescence was observed at longer wavelengths than those found for corresponding InyGa1−yAs/GaAs and GaAs1−xSbx/GaAs single quantum wells (SQW), which indicates a type-II band alignment in the BQW. The longest 300 K emission wavelength achieved so far was 1.332 μm. For an accurate determination of the band offset between GaAs1−xSbx and GaAs, required for a theoretical modeling of the interband transition energies of these BQWs, a large set of GaAs1−xSbx /GaAs SQWs was prepared from which a type-II band alignment was deduced, with the valence band discontinuity ratio Qv found to depend on the Sb concentration x (Qv=1.76+1.34 x). With this parameter it was possible to calculate the expected interband transition energies in a BQW structure without any adjustable parameters. The calculations are in agreement with experimental data within a range of ±4%. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114321
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Fluorescence-excitation and hole-burning spectroscopy of heavy-dose neutron-irradiated α-Al2O3 (1995)
    Springer
    Applied physics 60 (1995), S. 507-512 
    Details
    ISSN: 1432-0649
    Keywords: 42.70 ; 81.40 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We report on persistent spectral hole-burning and fluorescence-excitation spectroscopy in heavy-dose (3 × 1020 n/cm2) neutron-irradiated and annealed sapphire using a Ti:Sapphire ring laser in single-frequency and broad-band operation. The optimum conditions for hole burning were obtained after annealing the crystals to 400 °C. Holes have been detected in the near-infrared spectral range between 745 and 795 nm. At 1.5 K, the narrowest hole widths were approximately 2 GHz, so that about 104 holes can be burnt in this spectral region. Besides the storage density in the wavelength dimension, the coefficient describing the electric-field-induced filling of a spectral hole also rises by more than one order of magnitude as compared to crystals with low neutron-irradiation dose.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01080928
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  • 5
    Electronic Resource
    Electronic Resource
    Determination of fracture stress and strain of highly oriented short fibre-reinforced composites using a fracture mechanics-based iterative finite-element method (1995)
    Springer
    Journal of materials science 30 (1995), S. 481-487 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract For a tensile test specimen made of a short fibre-reinforced composite with the fibres oriented in the direction of force, a model was developed to describe the onset and propagation of microcracks, which finally lead to macroscopic failure of the specimen. The crack propagation theory used is based on a standard fracture mechanics method and was applied to the microstructure of the specimen by the finite element method. The results appear qualitatively correct. The micromechanical method applied gives a deeper insight into the fracture processes within short fibre-reinforced composites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00354415
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Scanning Auger analysis for the clarification of oxidation and interdiffusion processes during laser ablation of YBa2Cu3O7-x on alloy/oxide substrates (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 675-677 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Scanning Auger investigations are reported on layer systems consisting of a metallic substrate, an oxide buffer layer and the YBa2Cu3O7−x (YBCO) high temperature superconductor. By bending the samples under UHV conditions the internal interfaces have been made accessible for the Auger analysis. The examination of the interfaces have shown that an oxidation of the substrate alloy had taken place during the deposition of the YBCO in spite of the buffer layer already being present. Additionally, segregated sulphur has been found on the substrate/buffer interface, which can lead to a loss of adhesion of the layer system. By line scan investigations on samples prepared by ball cratering a carbon enriched zone of approximately 50 nm thickness has been detected at the interface of buffer and YBCO.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00321348
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