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  • 1
    Electronic Resource
    Electronic Resource
    Electron mobility in compensated VPE GaAs films (1980)
    Springer
    Applied physics 23 (1980), S. 37-40 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electron Hall mobilities were measured on a series of intentionally compensated vapor phase epitaxy (VPE) GaAs layers. Using Sn and Zn as dopants, compensation ratiosK=(ND+NA)/(ND-NA) as high as 50 were obtained. Already for samples with the lowestK values the 300 K mobilities are higher than the 77 K values. In the range 20〈T〈100 [K] the data may be represented by μ∼T α with α increasing from 0.6 to 1.1 with compensation. The experimental μ values are smaller than those predicted from current models in all cases. It appears that scattering at ionized impurities is the dominant process also at temperatures well above 77 K, and that this scattering process is quantitatively underestimated in current models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899568
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  • 2
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometry characterization of (InGa)N on GaN (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1715-1717 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudodielectric function spectra of hexagonal (InGa)N epitaxial layers on GaN were obtained by spectroscopic ellipsometry and compared with photoreflection spectra. Composition and thickness of the InxGa1−xN layers grown by metalorganic chemical vapor deposition, were varied between 0.04≤x≤0.10 and 15–60 nm, respectively. The pseudodielectric function exhibits a clear maximum at the fundamental gap energy of the (InGa)N, which allows a determination of the In content via the composition dependence of that gap energy. The pseudodielectric function spectrum of a complete GaN/(InGa)N/(AlGa)N/GaN light-emitting diode structure shows maxima arising from fundamental gap interband transitions of all constituent layers including the (InGa)N active region. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122255
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  • 3
    Electronic Resource
    Electronic Resource
    Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 241-243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant Raman scattering has been used to study hexagonal InxGa1−xN films with x(approximate)0.1, grown by metal–organic chemical vapor deposition on sapphire substrates. To vary the energy difference between the fundamental gap energy of the (InGa)N and the photon energy of the discrete laser emission lines used for recording the spectra, the sample temperature was varied between 300 and 870 K. Raman scattering by the (InGa)N A1(LO) phonon shows a clear resonance profile when the fundamental energy gap approaches the incident photon energy, with a maximum enhancement in scattering efficiency of 10 measured relative to the scattering strength of the E2 phonon mode. The (InGa)N A1(LO) phonon was found to shift to higher frequencies with respect to the E2 mode when the experimental conditions were varied from excitation below the fundamental energy gap of (InGa)N to above-band-gap excitation. This frequency shift is explained by the presence of compositional inhomogeneity, which results in localized regions with higher In content, and thus, lower gap energy and phonon frequency, and regions with lower In content, and consequently, higher gap energy and phonon frequency. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121768
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  • 4
    Electronic Resource
    Electronic Resource
    Annealing in a mercury bath of In+ and B+ implanted Cd0.23Hg0.77Te studied by resonant Raman scattering and Hall effect measurements (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2739-2742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant Raman scattering by longitudinal optical phonons has been used to study the effect of annealing in a hot Hg bath on 113In+ and 11B+ implanted Cd0.23Hg0.77Te. Up to the highest doses of 1×1013 cm−2 for In and 1×1014 cm−2 for B, respectively, Raman spectroscopy indicates a full recovery of the crystalline perfection for annealing temperatures around 320 °C and annealing times ≥10 min. This recovery is accompanied by an electrical activation of the implants. Control experiments have been carried out to prove that the electrical activity is not due to residual lattice damage and that the immersion in the Hg bath by itself has no effect on the Raman spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353047
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  • 5
    Electronic Resource
    Electronic Resource
    Band gaps and band offsets in strained GaAs1−ySby on InP grown by metalorganic chemical vapor deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 410-412 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metastable GaAs1−ySby with 0.22〈y〈0.70 has been grown pseudomorphically strained on (001) InP substrates using metalorganic chemical vapor deposition. The Sb concentration and layer thicknesses, ranging from 24 to 136 nm, were determined by high resolution x-ray diffraction (HRXRD) measurements. Low-temperature photoluminescence (PL) spectroscopy revealed spatially indirect band-to-band emission of electrons localized in the InP and holes in the GaAs1−ySby. At increased excitation power densities samples with layer thicknesses above 65 nm showed, also, spatially direct PL across the band gap of the strained GaAs1−ySby. From the PL data the band gap energy and the band offsets of GaAs1–ySby relative to InP were derived and compared with the predictions of the Model Solid Theory. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123044
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  • 6
    Electronic Resource
    Electronic Resource
    Light-emitting diodes and laser diodes based on a Ga1−xInxAs/GaAs1−ySby type II superlattice on InP substrate (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1951-1953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of light-emitting diodes (LEDs) and laser diodes with a staggered type II Ga1−xInxAs/GaAs1−ySby superlattice (SL) as the active region. SLs were grown strain compensated on the InP substrate using metalorganic chemical vapor deposition. The LEDs show room-temperature electroluminescence up to 2.14 μm, the index-guided diode lasers displayed cw laser emission at 1.71 μm up to 300 K. The spontaneous emission spectrum was found to show a significant blueshift with increasing injection current density, resulting in shorter laser emission wavelengths for the diode laser than for the LED. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123738
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  • 7
    Electronic Resource
    Electronic Resource
    Interfacial intermixing and arsenic incorporation in thin InP barriers embedded in In0.53Ga0.47As (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4299-4302 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In0.53Ga0.47As/InP/In0.53Ga0.47As heterostructures with InP barrier widths between 2 and 20 nm, grown by metal–organic chemical-vapor deposition (MOCVD), were analyzed with respect to interfacial intermixing and As incorporation in the InP. Raman scattering in conjunction with spectroscopic ellipsometry revealed the formation of intermixed (InGa)(AsP) interface layers with a width of about 2 nm. A second effect to be distinguished from interfacial intermixing was detected by the same experimental techniques, namely, the incorporation of As into the InP at an almost constant concentration for InP layer thicknesses up to at least 20 nm. The cross incorporation of As into the InP was attributed to memory effects in the MOCVD growth system. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367189
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  • 8
    Electronic Resource
    Electronic Resource
    Raman spectroscopic assessment of carbon-hydrogen pairs in carbon-doped GaAs layers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2546-2548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering by local vibrational modes of carbon-hydrogen pairs is reported for heavily carbon-doped epitaxial GaAs layers. Scattering by the longitudinal carbon mode of these pairs at 452 cm−1 shows a strong resonant enhancement for incident photon energies approaching the E1 band-gap energy of GaAs ((approximately-equal-to)3 eV). A possible mechanism for this resonance behavior is discussed in terms of the displacement of the carbon atom from its normal arsenic lattice site accompanied by a lengthening and weakening of the carbon-gallium bonds when carbon-hydrogen pairs form. The present findings demonstrate that resonant Raman scattering is an attractive tool for the detection of carbon-hydrogen pair formation in thin carbon-doped epitaxial GaAs layers grown from source materials containing hydrogen. The detection limit is estimated to be in the low 1018 cm−3 range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106908
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  • 9
    Electronic Resource
    Electronic Resource
    Resonant Raman scattering in GaN/(AlGa)N single quantum wells (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 363-365 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant Raman scattering has been used to study longitudinal optical (LO) phonon modes in 2–4-nm-wide GaN/Al0.15Ga0.85N single quantum wells (QW). Raman spectra recorded using subband gap excitation were found to be completely dominated by the phonon modes of the (AlGa)N barriers. In contrast, for excitation close to resonance with the lowest transition between confined electron and hole states in the GaN QW scattering by the A1(LO) phonon in the QW became dominant in spite of the narrow width of the QW. For well widths of 3 and 4 nm, the frequency of the A1(LO) phonon in the QW was found to be close to that in bulk GaN, whereas for a well width of 2 nm the QW phonon was broadened and shifted towards the frequency of the (AlGa)N A1(LO) phonon mode. This broadening and frequency shift indicate some cation intermixing for the narrowest QW with the widths of the interface regions being comparable to the well width of 2 nm, demonstrating the usefulness of resonant Raman scattering for quality assessment of GaN/(AlGa)N QWs and interfaces. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118413
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  • 10
    Electronic Resource
    Electronic Resource
    Realization and modeling of a pseudomorphic (GaAs1−xSbx–InyGa1−yAs)/GaAs bilayer-quantum well (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2639-2641 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have realized a (GaAs1−xSbx-InyGa 1−yAs)/GaAs bilayer-quantum well (BQW), which consists of two adjacent pseudomorphic layers of GaAs1−xSbx and InyGa1−yAs sandwiched between GaAs barriers. Photoluminescence was observed at longer wavelengths than those found for corresponding InyGa1−yAs/GaAs and GaAs1−xSbx/GaAs single quantum wells (SQW), which indicates a type-II band alignment in the BQW. The longest 300 K emission wavelength achieved so far was 1.332 μm. For an accurate determination of the band offset between GaAs1−xSbx and GaAs, required for a theoretical modeling of the interband transition energies of these BQWs, a large set of GaAs1−xSbx /GaAs SQWs was prepared from which a type-II band alignment was deduced, with the valence band discontinuity ratio Qv found to depend on the Sb concentration x (Qv=1.76+1.34 x). With this parameter it was possible to calculate the expected interband transition energies in a BQW structure without any adjustable parameters. The calculations are in agreement with experimental data within a range of ±4%. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114321
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