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Raman spectroscopic assessment of carbon-hydrogen pairs in carbon-doped GaAs layers (1992)

Wagner, J. ; Maier, M. ; Lauterbach, Th. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 2546-2548

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Raman scattering by local vibrational modes of carbon-hydrogen pairs is reported for heavily carbon-doped epitaxial GaAs layers. Scattering by the longitudinal carbon mode of these pairs at 452 cm−1 shows a strong resonant enhancement for incident photon energies approaching the E1 band-gap energy of GaAs ((approximately-equal-to)3 eV). A possible mechanism for this resonance behavior is discussed in terms of the displacement of the carbon atom from its normal arsenic lattice site accompanied by a lengthening and weakening of the carbon-gallium bonds when carbon-hydrogen pairs form. The present findings demonstrate that resonant Raman scattering is an attractive tool for the detection of carbon-hydrogen pair formation in thin carbon-doped epitaxial GaAs layers grown from source materials containing hydrogen. The detection limit is estimated to be in the low 1018 cm−3 range.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.106908

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