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Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy (1995)

Lee, W. I. ; Huang, T. C. ; Guo, J. D. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 1721-1723

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Two different kinds of n-type GaN films were prepared by organometallic vapor phase epitaxy, one by using trimethylgallium (TMGa) and another by using triethylgallium (TEGa) as the alkyl source. Schottky diodes with well-behaved current–voltage and capacitance–voltage characteristics were fabricated. Deep-level transient spectroscopy studies were performed on these samples. Three distinct deep levels, labeled E1, E2, and E3, were measured in the film grown with TMGa, with an activation energy of 0.14, 0.49, and 1.63±0.3 eV, respectively. Only one level, E3, was observed in the film prepared with TEGa. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.115028

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