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  • 1
    Electronic Resource
    Electronic Resource
    Adjustable boron carbonitride nanotubes (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5325-5333 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The adjustable photoluminescence (PL) and field electron emission (FEE) properties of boron carbonitride (B–C–N) nanotubes grown under well-controlled conditions are studied systematically. Large-scale highly aligned B–C–N nanotubes are synthesized directly on Ni substrates by the bias-assisted hot filament chemical vapor deposition method. Single-walled B–C–N nanotubes and nanometric B–C–N heterojunctions are obtained by the pulsed-arc-discharge technique and pause-reactivation two-stage process, respectively. It is found that the microstructures, orientations, and chemical compositions of the nanotubes can be controlled by varying growth parameters. The mechanism of the controllable growth is also investigated. Intense and stable PL from the nanotubes is observed in both blue-violet (photon energies 3.14–2.55 eV) and yellow-green bands (photon energies 2.13–2.34 eV) and the emission bands are adjusted by varying the compositions of the nanotubes. FEE properties are also studied and optimized by varying the B or N atomic concentrations in the nanotubes. All these results verify the controllability of the electronic band structure of the B–C–N nanotubes. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459596
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  • 2
    Electronic Resource
    Electronic Resource
    Synthesis and field-emission behavior of highly oriented boron carbonitride nanofibers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2624-2626 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large-area highly oriented boron carbonitride (BCN) nanofibers with various compositions were synthesized directly on polished polycrystalline nickel substrates from a gas mixture of N2, H2, CH4, and B2H6 by bias-assisted hot-filament chemical-vapor deposition. The morphology of BCN nanofibers was examined by scanning electron microscopy, the nanofiber structure was studied by high-resolution transmission electron microscopy, and the chemical composition of individual nanofibers was determined by electron energy-loss spectroscopy. Field-emission behavior of the BCN nanofibers was characterized and a high emission current density of about 20–80 mA/cm2 at a low electric field of 5–6 V/μm implies a promising application as field-emission sources. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126429
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  • 3
    Electronic Resource
    Electronic Resource
    Boron carbonitride nanojunctions (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 124-126 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron carbonitride (BCN) nanometric heterojunctions are controllably fabricated by bias-assisted hot-filament chemical vapor deposition with a pause-reactivation two-stage (PRTS) process. Tailored composition revulsion across the nanotube junction is obtained by simply varying the concentration of the gaseous precursor between the two stages of the PRTS process. The critical effect of the plasma power density in the reactivation process on continuous growth of the nanotubes is realized and controlled, leading to successful synthesis of the Y-shaped BCN nanojunctions. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1431692
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  • 4
    Electronic Resource
    Electronic Resource
    Schottky contact and the thermal stability of Ni on n-type GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1623-1627 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier height of Ni on n-GaN has been measured to be 0.56 and 0.66 eV by capacitance–voltage (C–V) and current–density–temperature (J–T) methods, respectively. Gallium nickel (Ga4Ni3) is formed as Ni is deposited on the GaN film, which affects the barrier height markedly. The thermal stability of Ni on GaN is also investigated by annealing these specimens at various temperatures. Specimen annealing at temperatures above 200 °C leads to the formation of nickel nitrides Ni3N and Ni4N at the interface of Ni and GaN. These interfacial compounds change the measured barrier height to 1.0 and 0.8 eV by C–V and J–T methods, respectively. Comparisons of Schottky characteristics of Ni with those of Pt, Pd, Au, and Ti are also discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363822
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  • 5
    Electronic Resource
    Electronic Resource
    The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3758-3760 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The GaN buffer layer was grown on the sapphire substrate by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) at 525 °C. The following 1.3 μm epitaxial GaN growth was carried out at 1025 °C. We varied the ramping rate from 12.5 to 100 °C/min to study the quality of the epitaxial GaN. It has been found that the x-ray peak width, photoluminescence (PL) linewidth, Hall mobilities, and carrier concentrations of GaN epitaxial layer strongly depend on the in situ thermal ramping rate. An optimum thermal ramping rate was found to be of 20 °C/min. The maximum mobility is 435 cm2/V s at carrier concentration of 1.7×1017 cm−3. The minimum full width at half maximum (FWHM) of x ray and PL were 5.5 min and 12 meV occur at a ramping rate of 20 °C/min. The decrease of the mobility at high and low ramping rate can be attributed to the thermal stress and the reevaporation of the GaN buffer layer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115997
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  • 6
    Electronic Resource
    Electronic Resource
    A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 235-237 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5×1017 to 1.7×1019 cm−3. The lowest value for the specific contact resistivity of 6.5×10−5 Ω cm2 is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116471
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  • 7
    Electronic Resource
    Electronic Resource
    X-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3440-3442 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Samples of GaN(0001) epitaxial films on sapphire Al2O3(0001) with different thicknesses of GaN buffer layers were characterized by x-ray diffraction method in both in-plane and plane-normal directions. The results show that all the epitaxial films are of good quality with the GaN[101¯0] (parallel)Al2O3[112¯0] and GaN[12¯10](parallel)Al2O3[11¯00]. This arrangement of crystal orientation can be attributed to the chemical potential overriding the lattice spacing mismatch. The x-ray results also indicate that the crystal coherence lengths in the in-plane direction are smaller than those measured in the plane-normal direction, i.e., a columnar-like structure normal to the film is observed. The rocking curve widths in the in-plane direction are also larger than those measured in the plane-normal direction. In-plane measurement of rocking curve and coherence length are essential physical quantities directly related to the electron mobility which was measured predominantly in the in-plane direction. The best epitaxial structure is the one grown with 10 nm buffer layer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115786
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  • 8
    Electronic Resource
    Electronic Resource
    Study of Schottky barriers on n-type GaN grown by low-pressure metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2657-2659 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barriers on n-type GaN films grown by low-pressure metalorganic chemical vapor deposition are characterized and derived. A thin Pt or a Pd layer is deposited by electron-gun evaporation to form Schottky contacts in a vacuum below 1×10−6 Torr. The Schottky barrier heights of Pt on the n-GaN film are determined to be 1.04 and 1.03 eV by current–voltage (C–V) and current density–temperature (J–T) measurements, respectively. Also based on C–V and J–T measurements, the measured barrier height of Pd on n-GaN is 0.94 and 0.91 eV, respectively. Schottky characteristics of Pt and Pd observed in the experiment are compared with those of Au and Ti in previous reports. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114327
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1721-1723 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two different kinds of n-type GaN films were prepared by organometallic vapor phase epitaxy, one by using trimethylgallium (TMGa) and another by using triethylgallium (TEGa) as the alkyl source. Schottky diodes with well-behaved current–voltage and capacitance–voltage characteristics were fabricated. Deep-level transient spectroscopy studies were performed on these samples. Three distinct deep levels, labeled E1, E2, and E3, were measured in the film grown with TMGa, with an activation energy of 0.14, 0.49, and 1.63±0.3 eV, respectively. Only one level, E3, was observed in the film prepared with TEGa. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115028
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  • 10
    Electronic Resource
    Electronic Resource
    Open structure tungstates: Synthesis, reactivity and ionic mobility
    Amsterdam : Elsevier
    Solid State Ionics 53-56 (1992), S. 305-314 
    Details
    ISSN: 0167-2738
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0167-2738(92)90393-4
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