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  • 1995-1999  (12)
  • 1965-1969
  • 1997  (4)
  • 1996  (8)
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Years
  • 1995-1999  (12)
  • 1965-1969
Year
Keywords
  • 1
    Electronic Resource
    Electronic Resource
    Connection between quasielastic Raman scattering and free volume in polymeric glasses and supercooled liquids (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 1057-1065 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Quasielastic light scattering (QLS) in the frequency interval 100–1000 GHz is measured in some polymers: polycarbonate, polybutadiene, polystyrene, and poly(methyl methacrylate). To describe the spectra, a model of the fast picosecond relaxation processes responsible for the QLS, which is based on the damping of the boson peak vibrations by the dynamic hole volume fluctuations, is used. Within the frame of the model, the intensity of the fast relaxation process is proportional to the fractional dynamic hole volume (which above the glass transition temperature Tg is known as the fractional free volume). The hole volumes can be measured using the positron annihilation lifetime spectroscopy (PALS). The comparison of the literature PALS data in the four polymers with the QLS shows an apparent correlation between the relaxation strength and the fractional dynamic hole volume in good agreement with the predictions of the model. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.474453
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  • 2
    Electronic Resource
    Electronic Resource
    Mathematical modeling of primary production and destruction of phytoplankton in operating and planned reservoirs (1996)
    Springer
    Power technology and engineering 30 (1996), S. 257-266 
    Details
    ISSN: 1570-1468
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Conclusions 1. The proposed mathematical model of phytoplankton primary production and destruction permits estimating the dynamics of production and destruction processes both in operating and planned reservoirs as applied to the problem of calculating (predicting) the water quality and oxygen regime of these reservoirs. 2. A necessary condition of the practical use of this model is a preliminary determination of a number of its parameters on an operating reservoir-analog, the selection of which is not limited by any certain conditions related to its size, level of pollution, and trophic state, although, of course, it is advisable that it be close in these indices to the reservoir for which it serves as an analog. 3. The result of using this model for calculating phytoplankton primary production and destruction on an operating reservoir show that it reflects with less accuracy the dynamics of production and destruction during the growing season and with greater accuracy their annual values. 4. When using the given model for predicting phytoplankton primary production and destruction on operating or planned reservoirs it is advisable to calculate them in several variants with the use of various approaches to a determination of various parameters of the model so that the most preferable of the variants is selected in accordance with the purposes and tasks of predicting the water quality and oxygen regime of these reservoirs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02443099
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  • 3
    Electronic Resource
    Electronic Resource
    Use of a model of an ideal mixer for calculating hydrochemical water-quality indices of a reservoir (1996)
    Springer
    Power technology and engineering 30 (1996), S. 222-228 
    Details
    ISSN: 1570-1468
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Conclusions 1. The results of using the model of an ideal mixer for calculating one of the integral hydrochemical indices of water quality — the annual BOD5 dynamics observed on reservoirs of the Zagorsk PSS in 1989 — permit concluding the correspondence of this mode to the on-site observation data. 2. The methods of calculating the water self-purification coefficients developed on the basis of the model of an ideal mixer permit determining these coefficients by solving the inverse problem on the basis of the data of on-site observations of the actual water, hydrochemical, and hydrobiological regimes of an operating reservoir-analog (for conditions of a steady regime) and recalculating them theoretically for any given regime (steady and transient) of an operating or planned reservoir. 3. An evaluation of the accuracy of various methods of calculating the self-purification coefficients and water quality in a reservoir (main and simplified) for the example of calculating the actual annual BOD5 dynamics of the Zagorsk PSS reservoirs during 1989 showed that they give results close among themselves and to the observed BOD5. This permits recommending both methods for practical use jointly or independently of one another.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02443081
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  • 4
    Electronic Resource
    Electronic Resource
    Dynamic model of the oxygen regime of a reservoir (1996)
    Springer
    Power technology and engineering 30 (1996), S. 392-399 
    Details
    ISSN: 1570-1468
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Conclusions 1. The developed dynamic model of the oxygen regime of the reservoir is in essence the next modification of the classical steady-state Streeter-Phelps model proposed for describing the interaction between dissolved oxygen and BOD on the river stretch. 2. Underlying the given modification is the use, in the Streeter-Phelps model, of a dynamic ideal mixer model for describing the process of movement of water in the reservoir, unlike a river stretch, on a steady-state ideal displacement model and consideration of certain additional oxygen sources and sinks having a determining effect on the oxygen regime of the reservoir and related mainly to the production and destruction (mineralization) of phytoplankton as well as to the inflow of river and wastewaters and oxygen consumption by bottom deposits. 3. The proposed dynamic model includes the main (numerical) and simplified (analytical) methods of calculating the oxygen regime of a reservoir, the practical use of which for calculating and predicting this regime in particular operating and planned reservoirs showed that they give similar results and, consequently, can be used jointly or independently of one another.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02446420
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of vacancy-related defects introduced into silicon during heat treatment by deep-level transient spectroscopy and gamma-ray diffraction techniques (1996)
    Springer
    Applied physics 62 (1996), S. 259-262 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.72.Cc; 61.72.Ji; 73.61.Cw
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Vacancy-related defects introduced into n-Si during annealing or aluminium diffusion at high temperatures (1000–1250 °C) have been studied. Different ambients (argon, nitrogen, vacuum and chlorine-containing atmosphere) were used to create a vacancy supersaturation during heat treatments. Three deep-level centers whose formation is governed by the presence of vacancies have been identified. They were characterized by the following temperature dependences of the thermal emission rate: e 3=7.92×107 T 2×exp(−0.455/kT), e 5= 2.64×106 T 2×exp(−0.266/kT), e 7=7.26×106 T 2×exp (−0.192/kT). The influence of different factors, such as heat-treatment conditions, concentration of oxygen and doping level in initial crystals, on center formation was studied. An asymmetric diffuse γ-ray scattering was observed near the surface of a crystal irradiated by thermal neutrons and annealed in a chlorine-containing atmosphere. This scattering is related to the formation of structural defects of the vacancy type. In the same region of the crystal, the concentration of the E7 center was one order of magnitude higher than that of other deep-level centers. Comparison of the γ-ray diffraction and deep-level transient spectroscopy (DLTS) data suggests that the formation of the center occurs under the conditions of Si supersaturation with vacancies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01575091
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of vacancy-related defects introduced into silicon during heat treatment by deep-level transient spectroscopy and gamma-ray diffraction techniques (1996)
    Springer
    Applied physics 62 (1996), S. 259-262 
    Details
    ISSN: 1432-0630
    Keywords: 61.72.Cc ; 61.72.Ji ; 73.61.Cw
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Vacancy-related defects introduced into n-Si during annealing or aluminium diffusion at high temperature (1000–1250°C) have been studied. Different ambients (argon, nitrogen, vacuum and chlorine-containing atmosphere) were used to create a vacancy supersaturation during heat treatments. Three deep-level centers whose formation is governed by the presence of vacancies have been identified. They were characterized by the following temperature dependences of the thermal emission rate:e3 = 7.92 × 107 T 2 × exp(− 0.455/kT),e 5 = 2.64 × 106 T 2 × exp( − 0.266/kT),e 7 = 7.26 × 106 T 2 × exp (− 0.192/kT). The influence of different factors, such as heat-treatment conditions, concentration of oxygen and doping level in initial crystals, on center formation was studied. An asymmetric diffuseγ-ray scattering was observed near the surface of a crystal irradiated by thermal neutrons and annealed in a chlorine-containing atmosphere. This scattering is related to the formation of structural defects of the vacancy type. In the same region of the crystal, the concentration of the E7 center was one order of magnitude higher than that of other deep-level centers. Comparison of theγ-ray diffraction and deeplevel transient spectroscopy (DLTS) data suggests that the formation of the center occurs under the conditions of Si supersaturation with vacancies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01575091
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  • 7
    Electronic Resource
    Electronic Resource
    Linear low-temperature dependence of the surface impedance of a Ba0.6K0.4BiO3 single crystal (1996)
    Springer
    JETP letters 64 (1996), S. 832-838 
    Details
    ISSN: 1090-6487
    Keywords: 84.37.+q ; 74.72.Yg ; 74.72.Bk ; 74.72.Hs
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The temperature dependences of the real part R s and the imaginary part X s of the surface impedance Z s =R s +iX s of the superconductor Ba0.6K0.4BiO3 (T c ≃30 K) are measured at a frequency of 9.4 GHz. Its temperature dependence Z s (T) and that of the complex conductivity σ s (T) can be described on the basis of a two-fluid model under two assumptions: The density of superconducting carriers increases linearly, and the relaxation time increases as a power law (∝1/T 5), with decreasing temperature T〈T c . This model also describes well the curves Z s (T) and σs (T) recently measured for YBa2Cu3O6.95 and Bi2Sr2CaCu2O8 single crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567255
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  • 8
    Electronic Resource
    Electronic Resource
    Microwave impedance of Ba0.6K0.4BiO3 crystals: Comparison with Nb (1997)
    Springer
    Journal of experimental and theoretical physics 84 (1997), S. 383-387 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The surface impedance Z s=R s+iX s of samples of Ba0.6K0.4BiO3 in the temperature range 4〈T〈50 K is measured at 9.42 GHz. The BCS theory completely describes the electrodynamic properties of Nb in the dirty limit, and its application to Ba0.6K0.4BiO3 allows determination of the London penetration depth λ L(0)=3100±100 Å.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.558127
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature dependence of surface impedance of Tl2Ba2CaCu2O8−δ and YBa2Cu3O6.95 single crystals measured in the microwave band (1997)
    Springer
    Journal of experimental and theoretical physics 85 (1997), S. 1211-1217 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The real part R s and the imaginary part X s of the surface impedance Z s=R s+ iX s of Tl2Ba2CaCu2O8−δ and YBa2Cu3O6.95 single crystals have been measured with high precision at frequency ω/2π=9.4 GHz in the temperature range 0〈T〈140 K. In the Tl2Ba2CaCu2O8−δ crystal a linear temperature dependence R s(T) has been found for T⩽50 K, and the magnetic field penetration depth λ(4.2 K)=X s(4.2 K)/ω μ 0≈3760 Å has been measured. Along with well known features of the function Z s(T) in high-quality YBa2Cu3O6.95 single crystals, such as the linearity of λ(T) and R s(T) for T〈T c/3 and a maximum of R s(T) at T∼T c/2, the linearity range of λ(T) extends to T≃50 K, and this curve has a plateau in the range 60〈T〈85 K. The curve of R s(T) in both the superconducting and normal states of YBa2Cu3O6.95 is well described by a two-fluid model with the electron-phonon mechanism of quasiparticle relaxation. A formula describing the curve of λ 2(0)/λ 2(T) throughout the studied temperature range is also given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.558395
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  • 10
    Electronic Resource
    Electronic Resource
    Comparative assessment of the indications of different types of radon meters (1996)
    Springer
    Atomic energy 81 (1996), S. 479-488 
    Details
    ISSN: 1573-8205
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02415731
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