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  • 1995-1999  (2)
  • 1998  (1)
  • 1996  (1)
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  • 1995-1999  (2)
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  • 1998  (1)
  • 1996  (1)
  • 1995  (2)
  • 1
    ISSN: 1432-1076
    Keywords: Key words Febrile seizures ; Genetics ; Family ; Risk factors
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract To quantify the risk of febrile seizures (FS) in relatives of children with FS and to predict the risk of FS in siblings, we calculated cumulative risks of FS in first degree relatives of 129 children with FS. The study was conducted as a prospective follow up study of FS recurrences at the outpatient clinic of the Sophia Children's Hospital in Rotterdam. Thirteen parents and 12 siblings had experienced FS, accounting for a 6-year cumulative risk of 7%. The risk of FS was increased in relatives of children with recurrent FS (12%). The risk of FS in siblings (10%) in our study was more than twice the average risk in a similar population (4%). A positive FS history in a parent, young age at onset in the proband, and recurrences in the proband were selected in a multivariable prediction model. If two or more of these risk factors were present, the risk of West European siblings to develop FS was 46% (hazard ratio 5.4). Conclusion The cumulative risk of FS in siblings of children with FS is increased. The age attained risk of FS can be estimated using a practical model incorporating three readily available risk factors.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2744-2746 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spherical MnAs ferromagnetic particles with controllable diameters (5–30 nm) are embedded in a high quality GaAs matrix. The particles are formed in a two step process consisting of the epitaxy of a homogeneous Ga1−xMnxAs layer at low temperatures using molecular beam epitaxy followed by phase separation upon annealing. During the annealing step, the excess arsenic in the as-grown film forms magnetic MnAs precipitates with the Mn from the Ga1−xMnxAs lattice. Structural and room-temperature magnetic properties of the heterogeneous GaAs:MnAs films are described. The magnetic MnAs rich layers can be incorporated into semiconductor heterostructures as demonstrated by growing (GaAs/AlAs) multiple quantum well structures in combination with GaAs:MnAs layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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