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Structural and magnetic investigations of epitaxial ferromagnetic τ MnAl films grown on GaAs/AlAs by molecular-beam epitaxy (1995)

Van Roy, W. ; De Boeck, J. ; Bender, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 398-404

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The crystalline quality and magnetic properties of epitaxial ferromagnetic τ MnxAl100−x (x=50–70) films with perpendicular anisotropy grown on AlAs/GaAs by molecular-beam epitaxy are improved by ex situ rapid thermal annealing compared to as-grown thin films. An increase in magnetization of up to 230% is observed for moderate annealing temperatures (≈450 °C). This is strongly related to an improved ordering in the occupation of the two sublattices, which are antiferromagnetically coupled. At the same time a strong reduction in coercive field (up to a factor of 4) upon annealing is attributed to a decreased density of antiphase boundaries in the metal film. Annealing at higher temperatures (≈550 °C and above) results in the partial relaxation of the τ phase, and eventually in the transformation of the entire film to the nonmagnetic ε phase. The composition has a strong influence since the presence of excess Mn (x(approximately-greater-than)50) reduces the magnetization. The remanent magnetization Mr=465 kA/m for τ Mn50Al50 is close to the bulk value of 490 kA/m. The thickness of the film has little influence on the annealing behavior. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360614

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Co/CoAl magnetic superlattices on GaAs : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)

De Boeck, J. ; Bruynseraede, C. ; Bender, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 6281-6283

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Co/CoAl multilayers are grown by molecular beam epitaxy on AlAs/GaAs (001). CoAl is used as a template for the epitaxy of Co. From RHEED and lattice matching considerations bcc Co is expected, but thicker Co layers are probably fcc with stacking faults. The crystallographic structure of the Co layers is unclear at present. Room-temperature magnetization and magnetoresistance data are presented. Co/CoAl multilayers with various CoAl thickness all show in-plane magnetic anisotropies along 〈110〉. Uniaxial anisotropy along 〈110〉 is found to increase with increasing thickness of the CoAl layers in the multilayers. The magnetoresistive effect as a function of the orientation of the current path and the applied field is ascribed to domain-wall effects and internal Lorentz magnetoresistance.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.358305

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Integration of spin valves and GaAs diodes in magnetoresistive random access memory cells (1999)

Boeve, H. ; Das, J. ; Bruynseraede, C. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 85 (1999), S. 4779-4781

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A magnetoresistive random access memory, based on a dynamic random access memory-like floor plan, is demonstrated for an array of magnetic memory cells. Each memory cell consists of a giant magnetoresistive spin-valve structure in series with a GaAs diode. Any single bit in the matrix can be addressed using a coincident current scheme, both for write and read operations. The integration of a series diode in the memory cell yields, for this first demonstrator, read signals of approximately 10 mV. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.370479

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Nanometer-scale magnetic MnAs particles in GaAs grown by molecular beam epitaxy (1996)

De Boeck, J. ; Oesterholt, R. ; Van Esch, A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 2744-2746

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Spherical MnAs ferromagnetic particles with controllable diameters (5–30 nm) are embedded in a high quality GaAs matrix. The particles are formed in a two step process consisting of the epitaxy of a homogeneous Ga1−xMnxAs layer at low temperatures using molecular beam epitaxy followed by phase separation upon annealing. During the annealing step, the excess arsenic in the as-grown film forms magnetic MnAs precipitates with the Mn from the Ga1−xMnxAs lattice. Structural and room-temperature magnetic properties of the heterogeneous GaAs:MnAs films are described. The magnetic MnAs rich layers can be incorporated into semiconductor heterostructures as demonstrated by growing (GaAs/AlAs) multiple quantum well structures in combination with GaAs:MnAs layers. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.115584

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