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  • 2000-2004
  • 1995-1999  (2)
  • 1985-1989
  • 1997  (2)
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  • 2000-2004
  • 1995-1999  (2)
  • 1985-1989
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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 1026-1033 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A theoretical model for electron-impact total ionization cross sections, which has been found to be reliable for a wide range of molecules, is applied to molecules of interest to atmospheric science. The new theory, the binary-encounter-Bethe (BEB) model, combines the binary-encounter theory and the Bethe theory for electron-impact ionization, and uses simple theoretical data for the ground state of the target molecule, which are readily available from molecular structure codes. Total ionization cross sections of 11 molecules, CS, CS2, COS, CH4, H2S, NH3, NO2, N2O, O3, S2, and SO2, are presented for incident electron energies from threshold to 1 keV with an average accuracy of 15% or better at the cross section peak. We also found that the use of vertical ionization potentials (IPs) rather than adiabatic IPs for the lowest IPs significantly improves BEB cross sections between the threshold and cross section peak for molecules whose adiabatic and vertical IPs are different by ∼1 eV or more (CH4 and NH3). The BEB cross sections are presented in a compact analytic form with a small number of constants, making the cross sections suitable for modeling applications. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract An MBE grown InGaAs metal semiconductor metal (MSM) photodiode (PD) with an InAlAs barrier enhancement layer is reported that has very low dark current and high speed characteristics. The detector using Cr/Au Schottky metal fingers with 4m spacing on a large active area of 300×300m2 shows a low dark current of 38nA at 10V. This corresponds to a dark current density of 0.42pA/m2 and is, to our knowledge, the best dark current ever obtained from a large area InGaAs MSM PD. The device also shows a low capacitance of 0.8pF and a high 3dB bandwidth of 2.4GHz. By fitting the measured frequency response to a model consisting of both RC time and transit time limited responses, we show that the device has an RC time and a transit time limited 3dB bandwidth of 3.0 and 4.9GHz, respectively.
    Type of Medium: Electronic Resource
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