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  • 1
    Electronic Resource
    Electronic Resource
    Proteolytic activity in human burn wounds (1997)
    Oxford, UK : Blackwell Science
    Wound repair and regeneration 5 (1997), S. 0 
    Details
    ISSN: 1524-475X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Wound healing is the result of a dynamic balance between synthetic and degradative processes. After a burn, proteolytic activity increases at the wound site. Excised burn wounds and donor skin were examined from 20 pediatric burn patients, to determine which of two classes of neutral proteinases, serine or metalloproteinases, accounts for the majority of this proteolytic activity in these tissues; to examine messenger RNA expression of three of the principal enzymes and inhibitors of this class; and to measure enzymatic activity of two of these metalloproteinases. The majority of the increased proteolysis was due to metalloproteinases. By polymerase chain reaction assays, messenger RNAs for matrix metalloproteinase-1, -3, and -9 were strongly expressed in burn tissue and absent or weakly expressed in unburned skin. Messenger RNA for tissue inhibitor of metalloproteinase-1 and -2 was consistently present in burned and unburned skin. By zymography, there was a significant increase in matrix metalloproteinase-2 (twofold to threefold) and matrix metalloproteinase-9 (20- to 30-fold) activity in burned versus unburned skin. We suggest that postburn there is an upregulation of some matrix metalloproteinases that exceeds the level of inhibitors with the net result of an increase in proteolysis in burned tissue. This increased proteolysis may play a role in wound repair and scar formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1524-475X.1997.50404.x
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  • 2
    Electronic Resource
    Electronic Resource
    Mouse models to study wound closure and topical treatment of infected wounds in healing-impaired and normal healing hosts (1997)
    Oxford, UK : Blackwell Science
    Wound repair and regeneration 5 (1997), S. 0 
    Details
    ISSN: 1524-475X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Full-thickness wounds were made on the backs of wound healing-impaired diabetic mice and their normally healing litter mates. The wounds were then inoculated with 104 colony-forming units of Pseudomonas aeruginosa. In both cases, the inoculum increased rapidly to between 109 and 1010 colony-forming units/wound area. The infection caused a significant decrease in wound closure in the normally healing mice. In the wound healing-impaired diabetic mice, infection increased the size of the wound area over 100% by day 21. The wound became filled with inflammatory cells and serous fluid, and the mice lost significant amounts of weight, an additional sign of severe, ongoing infection. Early antimicrobial treatment of infected wounds in diabetic mice (1 hour after wounding and microbial inoculation) reversed the increase in wound size area, improved wound closure, and reduced to a significant degree the weight loss observed in untreated control mice. Delay in treatment for as little as 8 hours significantly reduces the efficacy of antimicrobial treatment. These models can be used to study the effects of infection as well as to determine the efficacy of topical antimicrobial and/or wound healing-enhancing substances on these wounds in both normally healing and healing-impaired hosts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1524-475X.1997.50213.x
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  • 3
    Electronic Resource
    Electronic Resource
    Synaptic Vesicle Recycling in Cultured Cerebellar Granule Cells: Role of Vesicular Acidification and Refilling (1997)
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 69 (1997), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The role of the transvesicular protonmotive force in synaptic vesicle recycling was investigated in cultured cerebellar granule cells. The vesicular V-ATPase was inhibited by 1 µM bafilomycin A1; as an alternative, the pH component of the gradient was selectively collapsed by equilibration of the cells with 10 mM methylamine and monitored with the fluorescent probe Lysosensor Green. Electrical field-evoked exocytosis of d-[3H]aspartate was inhibited by bafilomycin A1 but not by methylamine, indicating that a transvesicular membrane potential rather than pH gradient is required for transmitter retention within vesicles. In contrast, neither compound affected the field-evoked uptake, recycling, or destaining of the vesicle-specific dye FM2-10; thus, vesicles whose lumens were neutral and/or depleted of transmitter could still recycle in the nerve terminal. No exhaustion of d-[3H]aspartate exocytosis was observed when cells were subjected to six consecutive trains of field stimuli (40 Hz/10 s separated by 10 s). In contrast, the release of preloaded FM2-10 was reduced by ∼50%, with each stimulus indicating that unlabeled vesicles with accumulated d-[3H]aspartate were competing with labeled vesicles for exocytosis. As d-[3H]aspartate was accumulated rapidly across the vesicle membrane from the large cytoplasmic pool, the transmitter-loaded but unlabelled vesicles may represent refilled recycling vesicles. FM2-10 destaining and d-[3H]aspartate exocytosis were reduced in parallel at low frequencies, challenging a role for transient vesicle fusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.1997.69051927.x
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  • 4
    Electronic Resource
    Electronic Resource
    Heat transport in thin dielectric films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2590-2595 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heat transport in 20–300 nm thick dielectric films is characterized in the temperature range of 78–400 K using the 3ω method. SiO2 and SiNx films are deposited on Si substrates at 300 °C using plasma enhanced chemical vapor deposition (PECVD). For films 〉100 nm thick, the thermal conductivity shows little dependence on film thickness: the thermal conductivity of PECVD SiO2 films is only ∼10% smaller than the conductivity of SiO2 grown by thermal oxidation. The thermal conductivity of PECVD SiNx films is approximately a factor of 2 smaller than SiNx deposited by atmospheric pressure CVD at 900 °C. For films 〈50 nm thick, the apparent thermal conductivity of both SiO2 and SiNx films decreases with film thickness. The thickness dependent thermal conductivity is interpreted in terms of a small interface thermal resistance RI. At room temperature, RI∼2×10−8 K m2 W−1 and is equivalent to the thermal resistance of a ∼20 nm thick layer of SiO2 . © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363923
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  • 5
    Electronic Resource
    Electronic Resource
    Morphology of epitaxial TiN(001) grown by magnetron sputtering (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1703-1705 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of surface morphology and microstructure during growth of single crystal TiN(001) is characterized by in situ scanning tunneling microscopy and postdeposition plan-view transmission electron microscopy. The TiN layers are grown on MgO at 650〈T〈750 °C using reactive magnetron sputter deposition in pure N2. The surface morphology is dominated by growth mounds with an aspect ratio of (similar, equals)0.006; both the roughness amplitude and average separation between mounds approximately follow a power law dependence on film thickness, tα, with α=0.25±0.07. Island edges show dendritic geometries characteristic of limited step-edge mobility at the growth temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118675
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  • 6
    Electronic Resource
    Electronic Resource
    Social Affairs (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Economic affairs 17 (1997), S. 0 
    Details
    ISSN: 1468-0270
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/1468-0270.00062
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  • 7
    Electronic Resource
    Electronic Resource
    Social Affairs (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Economic affairs 17 (1997), S. 0 
    Details
    ISSN: 1468-0270
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/1468-0270.00044
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  • 8
    Electronic Resource
    Electronic Resource
    Social Affairs (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Economic affairs 17 (1997), S. 0 
    Details
    ISSN: 1468-0270
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/1468-0270.00028
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  • 9
    Electronic Resource
    Electronic Resource
    Social Affairs (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Economic affairs 17 (1997), S. 0 
    Details
    ISSN: 1468-0270
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/1468-0270.00013
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  • 10
    Electronic Resource
    Electronic Resource
    Thermal conductivity of Si–Ge superlattices (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2957-2959 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal conductivity of Si–Ge superlattices with superlattice periods 30〈L〈300 Å, and a Si0.85Ge0.15 thin film alloy is measured using the 3ω method. The alloy film shows a conductivity comparable to bulk SiGe alloys while the superlattice samples have a thermal conductivity that is smaller than the alloy. For 30〈L〈70 Å, the thermal conductivity decreases with decreasing L; these data provide a lower limit to the interface thermal conductance G of epitaxial Si–Ge interfaces: G〉 2 × 109 W m−2 K−1 at 200 K. Superlattices with relatively longer periods, L〉130 Å, have smaller thermal conductivities than the short-period samples. This unexpected result is attributed to a strong disruption of the lattice vibrations by extended defects produced during lattice-mismatched growth. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118755
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