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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4430-4432 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An improved model is proposed to deal with the magnetic bilayer systems taking into account the contribution of the anisotropy energy and biquadratic exchange coupling to elaborate on the evolution of the magnetoresistance (MR) ratio and magnetization process. The results indicate that the characteristic behavior of the MR ratio depends distinctly on both the biquadratic coupling constant and the layer thickness. The profile of the MR ratio was found to vary from an inverted bell shape to a concave pyramid with increasing biquadratic coupling strength, and decays sharply with the layer thickness. This model calculation helps us to provide a venue for further understanding the MR or giant magnetoresistance behavior of the magnetic multilayer system. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 224-226 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced formation of C54-TiSi2 in high-temperature deposited Ti thin films on preamorphized (001)Si has been investigated by high-resolution transmission electron microscopy in conjunction with autocorrelation function analysis. The increase in the thickness of the amorphous TiSix layer is due to the preamorphization implantation for the most part. The dominant effect of high-temperature sputtering is to increase the density of crystallites in the amorphous TiSix layer. The enhanced formation of C54–TiSi2 in high-temperature deposited samples is attributed to the more extensive presence of silicide crystallites, which serve as nucleation sites, in the amorphous TiSix layer than that in samples deposited at room temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1406-1408 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tensile stress induced by backside CoSi2 films on a silicon substrate has been found to enhance the growth of C54–TiSi2 on (001)Si. In contrast, compressive stress induced by backside oxide films on the silicon substrate was found to retard significantly the growth of C54–TiSi2 on (001)Si. For Ti on stressed (001)Si after rapid thermal annealing at 800 °C for 30 s, the thickness of the C54– TiSi2 films was found to increase and decrease with the tensile and compressive stress levels, respectively. The retarded growth is attributed to the hindrance of the migration of Si through the Ti/Si interface by the compressive stress. On the other hand, the presence of tensile stress promotes the Si diffusion to facilitate the formation of Ti silicide thin films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3455-3457 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantum-dot vertical-cavity surface-emitting laser based on a modified Purcell effect is described. It is shown that the quantum-field confinement can greatly improve the modulation response, while arrays of such elements can generate power levels useful for high-speed data communication. The high-speed pulse response allows bias-free operation and makes the microcavity array an attractive replacement for single-aperture vertical-cavity surface-emitting lasers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1745-4603
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Notes: The measured rheological behavior of hard wheat flour dough was predicted using three nonlinear differential viscoelastic models. The Phan-Thien Tanner model gave good zero shear viscosity prediction, but overpredicted the shear viscosity at higher shear rates and the transient and extensional properties. The Giesekus-Leonov model gave similar predictions to the Phan-Thien Tanner model, but the extensional viscosity prediction showed extension thickening. Using high values of the mobility factor, extension thinning behavior was observed but the predictions were not satisfactory. The White-Metzner model gave good predictions of the steady shear viscosity and the first normal stress coefficient but it was unable to predict the uniaxial extensional viscosity as it exhibited asymptotic behavior in the tested extensional rates. It also predicted the transient shear properties with moderate accuracy in the transient phase, but very well at higher times, compared to the Phan-Thien Tanner model and the Giesekus-Leonov model. None of the models predicted all observed data consistently well. Overall the White-Metzner model appeared to make the best predictions of all the observed data.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 6 (1999), S. 524-525 
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 55 (1999), S. 255-257 
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Using electron diffraction patterns and high-resolution electron microscopy (HREM), a trace 114R SiC in commercial α-SiC powder (mainly 6H SiC according to X-ray diffraction) has been discovered. In a hexagonal unit cell its stacking sequence is [(33)4(34)2]3, the periodicity along the c axis is 286.14 Å and a = b = 3.073 Å. 114R belongs to the structure series of (33)〈inf/〉n34(33)〈inf/〉m34 predicted theoretically by Pandey & Krishna [Mater. Sci. Eng. (1975), 20, 243–249] on the basis of the faulted matrix model.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Pure and applied geophysics 156 (1999), S. 631-649 
    ISSN: 1420-9136
    Keywords: Key Words: H/V ratio, spectral ratio, site response, microtremor, resonant frequency, amplification.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Notes: Abstract —The applicability of the single-station H/V method, based on the spectral ratio between the horizontal and the vertical components of strong ground motions, is examined for site-response estimation using the high quality data from the 1994 Northridge earthquake sequence. Instead of using Rayleigh-wave data from microtremors, the large amplitude-wave part of the S-wave data is used and based on the 1994 Northridge mainshock and aftershock recordings. We have found that upon averaging over a number of recordings for a given station, the station site responses, derived both from the single-station H/V ratio and from the standard spectral ratio (with respect to a reference rock-site station) are sufficiently close for practical purposes. We therefore conclude that the H/V ratio can reasonably predict the resonant frequency and the amplification level of a site response, especially for sites in the neighborhood of the epicenters. In the absence of a reference rock-site station, the H/V ratio provides a practical alternative to the standard site-response estimation.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1432-0533
    Keywords: Key words Vascular endothelial growth factor ; Brain ; tumor ; Pituitary adenoma ; Germ cell tumor ; Neurocytoma
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Compared to normal brain an increased expression of vascular endothelial growth factor (VEGF) has been reported in many types of brain tumors. However, the numbers of samples analyzed and information about the cellular distribution of VEGF have been limited. Here we used novel monochlonal antibodies against VEGF to analyze, using immunohistochemistry, Western blotting and enzyme-linked immunosorbent assay, its expression in 108 human brain tumors that included astrocytic tumors, meningiomas, pituitary adenomas, primary intracranial germ cell tumors and neuronal tumors. The results showed that 37 of 48 astrocytic tumors (77%) and 15 of 19 meningiomas (79%) were immunoreactive for VEGF, consistent with previous reports. However, in contrast to a previous report that analyzed only VEGF mRNA; all of our 15 pituitary adenomas showed specific immunoreactivity for VEGF. We also extended the studies to previously unanalyzed neoplasms: 13 of 15 primary intracranial germ cell tumors (82%), and 7 of 10 neuronal tumors (70%) were immunoreactive for VEGF. Direct protein analysis by Western blotting confirmed the expression of VEGF in those tumors, and showed differential expression of the isoforms of VEGF protein; a pituitary adenoma expressed both VEGF165 and VEGF189 proteins, a central neurocytoma expressed only VEGF165, while an immature teratoma expressed only VEGF189. The data herein show that VEGF is expressed in a wide spectrum of brain tumors and suggest differences among tumor entities in the mechanisms of VEGF up-regulation as well as their employment of distinct VEGF isoforms for neovascularization.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Acta neuropathologica 97 (1999), S. 431-432 
    ISSN: 1432-0533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Type of Medium: Electronic Resource
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