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  • 1995-1999  (3)
  • 1990-1994
  • 1999  (3)
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  • 1995-1999  (3)
  • 1990-1994
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  • 1
    Electronic Resource
    Electronic Resource
    Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5828-5833 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Exchange biased magnetic tunnel junction (MTJ) structures are shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture. MTJ elements have been developed which exhibit very large magnetoresistive (MR) values exceeding 40% at room temperature, with specific resistance values ranging down to as little as ∼60 Ω(μm)2, and with MR values enhanced by moderate thermal treatments. Large MR values are observed in magnetic elements with areas as small as 0.17 (μm)2. The magnetic field dependent current–voltage characteristics of an MTJ element integrated with a silicon diode are analyzed to extract the MR properties of the MTJ element itself. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369932
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic tunnel junctions thermally stable to above 300 °C (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 543-545 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic tunnel junctions formed from sandwiches of magnetically hard Co75Pt12Cr13 and magnetically soft Co88Pt12 ferromagnetic layers separated by thin alumina tunnel barriers are shown to be thermally stable to temperatures in excess of 300 °C. A comparison of cross-section transmission electron micrographs of an untreated sample and a similar one annealed at 350 °C indicates that the thickness of the amorphous tunnel barrier is slightly decreased after annealing. The resistance and magnetoresistance are only slightly affected by annealing at temperatures of up to ∼300 °C but then decrease monotonically at higher annealing temperatures. Interaction of the alumina layer with the adjacent ferromagnetic layers is the likely cause of this decrease. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124416
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Exchange-biased magnetic tunnel junctions: Dependence of offset field on junction width (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3690-3692 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic tunnel junction structures comprising a ferromagnetic layer pinned by exchange biasing and a "free" ferromagnetic layer were prepared using dc-magnetron sputtering and patterned with conventional optical lithography. Structures were prepared, square and rectangular in shape, with various widths and lengths. It was observed that the magnetic properties of the free layer vary systematically with the size of the junction. In particular, the offset field of the free-layer magnetic hysteresis loop, as measured resistively, is controlled by a combination of magnetostatic and ferromagnetic coupling between the pinned and free layers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123222
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    Paper (German National Licenses)
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