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  • 1
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 1780-1788 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have identified an optically enhanced magnetic phase transition in the newly synthesized organic molecular charge transfer salt, (BEDT–TTF)3Ta2F11 (BEDT–TTF 3/4 bis-ethylenedithiolotetrathiafulvalene) by ESR absorption measurements in the X band microwave region. At room temperature, only a doublet state ESR absorption is observed, but below 30 K several triplet ESR absorptions appear. The orientation dependence of the ESR absorption under illumination at energies near the band gaps in the material (640 nm, T=12 to 5 K, H0〈0.34 T) indicates that there are rapid spin exchange processes with times τe〈10−8 s near 7 to 5 K along certain crystallographic directions with a temperature dependence suggesting spin-lattice relaxation times which proceed via Van Vleck "direct processes.'' This, to our knowledge, is the first case where the magnetic properties of a charge transfer salt are altered by the interaction with photons of energy equal to the band gaps in a low dimensional solid, providing a new, interesting way to investigate these materials.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 25 (1995), S. 357-388 
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4980-4982 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explore the magnetic interlayer exchange coupling in single-crystalline Fe/Cr and Co/Cu wedged multilayers prepared by magnetron sputtering on two orientations of MgO—(100) and (110). Structural examination shows that high quality epitaxial films are obtained in both systems using seeded epitaxy growth techniques. Oscillatory interlayer coupling is observed in Cr-wedged samples grown on both MgO(100) and MgO(110) with similarly long oscillation periods of ∼18 A(ring). These results are comparable to earlier work for molecular beam epitaxy and sputter-deposited epitaxial Fe/Cr structures. Long-period oscillatory coupling is also observed in sputtered Co/Cu(110) for the Cu-wedged structures. Studies of the dependence of magnetic coupling on the thickness of the magnetic layers for fixed Cr layer thickness provides no evidence of any nonmonotonic dependence. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6455-6457 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the magnetothermopower of Co/Cu1−xNix multilayers (with x=0.37 and 0.42) at various temperatures. Both systems have negative thermopower and the magnitude of the thermopower increases as the magnetic field increases. We found that as the ferromagnetic component of the magnetization becomes larger at lower temperatures, both the magnetothermopower and the magnetoresistance decrease. The inverse relationship between the thermopower and the resistance, when the field H varies, holds well at different temperatures. We interpret the results in terms of the two-current model, with an emphasis on the spin-split density of states.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure and magnetic properties of phase-separated Fe-Ag and Co-Ag granular alloy films, grown epitaxially on (001) NaCl substrates and exhibiting giant magnetoresistance (GMR), have been investigated. Surprisingly, two Fe-Ag films of similar composition grown under identical conditions are found to have substantially different microstructures yet display similar GMR. The microstructure of the films is characterized by Fe-rich or Co-rich regions, respectively, 350–700 nm in extent, surrounded by a Ag-rich matrix. Within the Ag-rich regions, the Fe concentration varies from 20 to 25 at % and the Co concentration is (approximately-equal-to)16 at %. Within these regions essentially pure fcc Co particles and bcc Fe particles are in parallel and rotated epitaxial alignment respectively with the fcc silver matrix. The Co and Fe particles are (approximately-equal-to)15–25 A(ring) in diameter. It is these small particles which most likely account for the giant magnetoresistance exhibited by these alloys. This suggests that a size distribution of magnetic particles, sharply peaked at the optimum size with limited bulk segregation, might give rise to larger GMR values.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5524-5526 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the magnetothermopower S(H,T) for a series of Co/Cu multilayers with a constant Co layer thickness of 10 A(ring) but with Cu layer thickness varying between 9 and 21 A(ring). The thermopower is negative, and its magnitude increases with magnetic field. We also found the magnetothermopower to be linear in the conductance for all samples. In two samples studied, the linear relationship holds from room temperature down to 50 K, with the proportionality constant linear in temperature. The zero-field thermopower is roughly the same for all samples despite different Cu layer thickness. This behavior can be understood from the spin-dependent interface scattering model.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7751-7756 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various uncoupled, magnetoresistive multilayer systems show quasiequilibrium resistance noise associated with ||dR(H)/dH||. The size of this 1/f noise, particularly in comparison with Johnson noise in various frequency ranges, is discussed for all the different systems. All the observed samples exhibit resistive Barkhausen noise, allowing the measurement of domain sizes very similar to those observed in coupled samples. In addition, the asymmetric hysteresis of the Barkhausen noise in uncoupled multilayers suggests the same type of hysteretic domain structure observed in antiferromagnetically coupled multilayers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3564-3570 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spin structure of antiferromagnetic Fe/Cr multilayers has been investigated by polarized neutron reflectivity. Measurements were taken on freshly sputtered films as well as films annealed at different temperatures. For annealing temperatures up to 350 °C adjacent Fe layers were found to remain antiferromagnetic, but the coupling strength gradually decreases. In multilayers annealed at higher temperature both antiferro- and ferromagnetic phases are present. In all cases the magnetoresistance is proportional to the amount of antiferromagnetism. The presence of off-specular, diffuse scattering around the antiferromagnetic Bragg peak indicates that the magnetic domains are laterally limited; however, their size is not correlated directly to the magnetoresistance.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5526-5526 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic tunnel junctions (MTJ), structures consisting of two ferromagnetic layers separated by a thin barrier of Al2O3, have recently been shown to exhibit large magnetoresistance (MR) at room temperature. The possible use of these structures in devices requires a thorough characterization and understanding of the transport properties of MTJs, which has motivated the present work. The junctions studied here were fabricated via dc sputtering on silicon substrates at room temperature with a series of contact masks to define the junction area (80×80 μm2), and plasma oxidation to produce the insulating barrier. A long standing problem of MTJs is the sensitivity of their MR to bias voltage. For example, in a recent work1 it was reported that the peak MR of 11% exhibited by a CoFe/Al2O3/Co junction was decreased by half at a bias voltage of 〈200 mV. In this work, we will show a significant improvement of the MR voltage dependence, with peak MR values of 20%–25% near zero bias decreasing to half these values for 300–500 mV. The voltage falloff is typically asymmetric with regard to the sign of the applied voltage. For example, the peak MR of a Co/Al2O3/Ni85Fe15 MTJ, in which the Co is exchange biased with Mn54Fe46, decreases by half at a positive bias of 300 mV but requires a negative bias of 500 mV to attain the same MR decrease. There is significant structure in the resistance versus bias voltage curves with distinct differences at high and low magnetic fields for which the moments of the Co and Ni85Fe15 layers are parallel and antiparallel, respectively. A decrease in MR at high bias levels is found in all junctions independent of their resistance and the composition of the magnetic layers. However, the detailed dependence of MR on bias voltage varies with the detailed structure of the MTJ. Results will be presented for a wide range of magnetic materials and for junction resistances varying from 1 to 10 000 Ω. Possible explanations for this phenomena will be offered. ©1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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