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  • 1
    Electronic Resource
    Electronic Resource
    Low-Frequency Noise as a Tool to Study Disordered Materials (1996)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 26 (1996), S. 395-429 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.26.080196.002143
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  • 2
    Electronic Resource
    Electronic Resource
    Local hydrogen hopping and long-range diffusion in Nb films: An electrical noise study (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 915-924 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low-frequency resistance noise of thin Nb films was studied at temperatures from 60 to 400 K. This resistance noise came predominantly from hydrogen-ion motions, as can be shown by draining ions out of the sample with an electric field. In addition to the long-range diffusion noise and the large-scale collective motion noise, which have been described previously, noise was found near 150 K, due to local hydrogen hopping motions, similar to that observed in several other materials. However, unlike in some other materials, the local hopping noise came from a different type of motion than those that give the long-range diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351767
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  • 3
    Electronic Resource
    Electronic Resource
    Field-dependent susceptibility aging in CuMn spin glasses : The 6th joint magnetism and magnetic materials (MMM)−intermag conferenc (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6192-6194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A "hole'' is found to develop in the dc field-dependent ac susceptibility of CuMn spin glasses when the material is cooled or aged in a field. Comparisons are made with analogous experiments on structural glasses at low temperature. The hole is not compatible with independent two-level systems. The significance of the width (in H) of this hole is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358347
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  • 4
    Electronic Resource
    Electronic Resource
    Resistance noise in uncoupled giant magnetoresistive multilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7751-7756 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various uncoupled, magnetoresistive multilayer systems show quasiequilibrium resistance noise associated with ||dR(H)/dH||. The size of this 1/f noise, particularly in comparison with Johnson noise in various frequency ranges, is discussed for all the different systems. All the observed samples exhibit resistive Barkhausen noise, allowing the measurement of domain sizes very similar to those observed in coupled samples. In addition, the asymmetric hysteresis of the Barkhausen noise in uncoupled multilayers suggests the same type of hysteretic domain structure observed in antiferromagnetically coupled multilayers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362379
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  • 5
    Electronic Resource
    Electronic Resource
    1/f noise in giant magnetoresistive materials : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6531-6533 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The main source of 1/f resistance noise in materials exhibiting giant magnetoresistance (GMR) is the GMR effect itself. Large 1/f noise from fluctuations in the parallel vs antiparallel alignment appears when ||dR/dH|| is large. We have studied this noise as a function of the number of Co/Cu bilayers in multilayer samples and discuss the implications for devices. Barkhausen noise in the resistance as the field is swept through the GMR transition is used to estimate coherent domain sizes between 0.1 and 10 μm2 for a single Co layer in the multilayers. GMR noise is also seen in a Co/Ag granular system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356938
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical noise measurements on magnetic films (invited) (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4884-4888 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic structure and dynamics of thin films, especially antiferromagnets and spin glasses, are notoriously difficult to study due to the small volumes of materials involved. Electrical resistivity turns out to be sensitive to small fluctuations in magnetic configurations, allowing measurements of magnetic dynamics in films. Since measurements can be made in extremely small samples, the properties of individual fluctuating units, such as antiferromagnetic domains, can be studied directly. We discuss results in the antiferromagnet Cr and the spin glass CuMn.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344767
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  • 7
    Electronic Resource
    Electronic Resource
    Resistance noise as a technique for measuring finite-size effects in single-layer Cu(underbar)Mn spin-glass films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8317-8321 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present measurements of the spin-freezing temperature as a function of film thickness in single-layer thin films of Cu(underbar)Mn and Cu(underbar)MnAu. The noise measurements are used to characterize the temperature of the spin freezing in Cu(underbar)Mn and the cooperativity of the spin dynamics. As expected, the thicker films show cooperative spin dynamics near the spin-glass temperature. The measured spin-glass freezing temperatures as a function of film thickness are consistent with three-dimensional finite-size scaling. This article demonstrates that measurements of the resistance noise are a convenient alternative to magnetic measurements when studying dimensional effects in spin glasses. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370676
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  • 8
    Electronic Resource
    Electronic Resource
    1/f noise and the field effect in gated resistors (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 634-636 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantitative connection is made between the time-dependent field effect and 1/f noise in semiconductor devices exhibiting surface state occupancy fluctuations. Noise and ac field effect measurements were made on a gated silicon-on-sapphire resistor, providing direct evidence of a surface state contribution of ∼10% of the net 1/f noise.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334755
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical noise in hysteretic ferromagnet–insulator–ferromagnet tunnel junctions (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 600-602 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low frequency noise has been measured in magnetic tunnel junctions that have Al2O3 tunnel barriers and magnetoresistance values up to 35% at 295 K. Fluctuations in voltage were found to cross over from Johnson noise to shot noise at low bias voltages, in quantitative agreement with theories of noise in quantum ballistic systems. 1/f resistance noise, where f is frequency, predominates at larger biases and is proportional to the mean current squared. This noise is attributed to trapping processes and it depends sensitively on the relative position of the oxide edge and the ferromagnet–Al interface. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123158
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  • 10
    Electronic Resource
    Electronic Resource
    Non-Gaussian noise in a colossal magnetoresistive film (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 272-275 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalous non-Gaussian effects appear in the resistance fluctuations of a macroscopic sample of the colossal magnetoresistive material La2/3Ca1/3MnO3. Individual resistance switches are frequently resolved. The results indicate the presence of highly inhomogeneous hopping resistance among magnetic domains in this partially disordered material © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363844
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