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  • 1995-1999  (331)
  • 1980-1984
  • 1930-1934
  • 1999  (331)
  • 1
    ISSN: 1432-1203
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract OPLL (ossification of the posterior longitudinal ligament of the spine) is a common form of human myelopathy with a prevalence of as much as 4% in a variety of ethnic groups. To clarify the genetic factors that predispose to OPLL, we have studied ttw (tiptoe walking), a mouse model that presents ectopic ossification of the spinal ligaments similar to OPLL and have found that the ttw phenotype is caused by the nonsense mutation of the gene encoding nucleotide pyrophosphatase (NPPS), a membrane-bound glycoprotein thought to produce inorganic pyrophosphate, a major inhibitor of calcification and mineralization. To investigate a possible role of NPPS in the etiology of OPLL, we have examined its genetic variations in OPLL patients. A total of 323 OPLL patients was screened by means of polymerase chain reaction/single-strand conformation polymorphism analysis covering all the exons and their surrounding introns, plus about 1.5-kb of the promoter region. We identified ten nucleotide variations in the NPPS gene; five of the alterations caused amino-acid substitutions, and two of them were found specifically in OPLL patients. Subsequently, we performed an association study using these variations and found a significant association of an allele, viz., a deletion of T at a position 11 nucleotides upstream from the splice acceptor site of intron 20 (IVS20–11delT), with OPLL; the proportion of the individuals having this deletion was significantly higher (P = 0.0029) in OPLL patients than in controls, indicating that those who have this variation may be more susceptible to the abnormal ossification of the spinal ligaments. Thus, our study suggests that NPPS plays an important role in the etiology of human OPLL.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Human herpesvirus type 8 (HHV-8, Kaposi's sarcoma-associated herpesvirus)-positive lymphoma taking anaplastic large cell morphology in the skin is described in a 46-year-old man with AIDS. Multiple erythematous nodules appeared on the trunk and extremities during the treatment of AIDS. Histological examination of cutaneous nodules showed dense infiltration of CD30 + atypical lymphoid cells in the deep dermis. Immunoglobulin JH gene rearrangement was detected in these lymphoma cells. Both Epstein–Barr virus-encoded small RNA and HHV-8 mRNA (T1.1/nut-1) were detected in these lymphoma cells by in situ hybridization. Remarkable retention of the pericardial fluid was observed at the same time that cutaneous lesions grew, and lymphoma cells in the pericardial fluid showed the same phenotype as the cutaneous lymphoma. Chemotherapy with cyclophosphamide, doxorubicin, vincristine and prednisone effectively reduced both the cutaneous nodules and pericardial fluid. However, the patient died 4 months after diagnosis because of cytomegalovirus infection. As far as we know, this is the first report of an HHV-8-positive cutaneous lymphoma taking anaplastic large cell morphology. This case suggests the association of AIDS-related anaplastic large cell lymphoma with HHV-8.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Protoplasma 206 (1999), S. 1-10 
    ISSN: 1615-6102
    Keywords: Arabinogalactan protein ; Cell wall component ; Immunocytochemistry ; Pectin ; Pinus densiflora ; Pollen
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary In order to compare cell wall formation in gymnosperm pollen with that in angiosperm pollen, the distribution of cell wall constituents in the pollen grain and pollen tube ofPinus densiflora was studied immunocytochemically with monoclonal antibodies JIM 5 (against non- or poorly esterified pectin), JIM 7 (against highly esterified pectin), JIM 13 (against arabinogalactan proteins, AGPs), and LM 2 (against AGPs containing glucuronic acid). In the pollen grain wall, only the outer layer of the intine was labeled with JIM 5 and weakly with JIM 7. The tube wall was scarcely labeled with JIM 5 and very weakly labeled with JIM 7. In contrast, the whole of both the intine and the tube wall was strongly labeled with JIM 13 and LM 2, and the generative-cell wall was also labeled only with LM 2. The hemicellulose B fraction, which is the main polysaccharide fraction from the pollen tube wall, reacted strongly with JIM 13 and especially LM 2, but not with antipectin antibodies. These results demonstrate that the wall constituents and their localization inP. densiflora pollen are considerably different from those reported in angiosperm pollen and suggest that the main components of the cell wall ofP. densiflora pollen are arabinogalactan and AGPs containing glucuronic acid.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1435-232X
    Keywords: Key words Genomic organization ; CILP ; porcine NTPPHase ; Polymorphism
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract The CILP gene encodes a proform of two polypeptides. One of them, cartilage intermediate layer protein (CILP), is a non-collagenous protein recently isolated from human articular cartilage. The other is homologous to a porcine nucleotide pyrophosphohydrolase (NTPPHase) whose enzymatic activity is highest in articular tissue. The investigation reported here revealed that the CILP gene consists of nine exons spanning approximately 15 kb of genomic DNA on chromosome 15q22. We also report six single nucleotide variations in this gene; five of them cause amino acid changes and the most common of them substitutes isoleucine for threonine at codon 395.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 3466-3470 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-dimensional propagation and oblique collision of modified Korteweg–de Vries (mKdV) ion-acoustic solitons in a plasma with negative ions have been investigated experimentally. At a critical concentration of negative ions, both compressive and rarefractive mKdV solitons exhibit a resonance interaction at a particular amplitude when the colliding angle is fixed. The amplitude is found to be equal for both compressive and rarefractive solitons. The collided solitons suffer a positive phase shift during the interaction. The new solitons formed during the resonant interaction are found to obey the energy and momentum conservation laws of the mKdV solitons for three-wave interaction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5372-5375 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to investigate the exchange between copper complexes (Cu centers) in silicon crystal, the change of the photoluminescence (PL) intensity of the Cu center (Cu PL center; no-phonon peak: 1.014 eV) with annealing time was measured for p-type float-zone grown silicon crystals diffused with various concentrations of Cu at 700 °C followed by rapid cooling to room temperature. It was essential to assume the presence of at least one preceding species (precursor) of the Cu PL center to explain the annealing behavior of the PL intensity. Almost the same quantity of the precursor as the Cu PL center was estimated to remain in the as-cooled crystal. The formation energy of the Cu PL center was 0.57±0.05 eV, and dissociation energy was 0.63±0.05 eV. A positive correlation between the precursor of the Cu PL center and the deep level transient spectroscopy center located at Ec−0.15 eV was suggested. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6697-6700 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sulfur (S+) ions were implanted into gallium arsenide (GaAs) at 50 keV at various doses. Hydrogenated amorphous silicon (a-Si:H) films were deposited on the surface of the S+-implanted GaAs using a radio-frequency glow discharge system. The samples were annealed in an Ar atmosphere at 1000 °C for 10 min. During annealing, Si atoms were diffused from the a-Si:H films into the S+-implanted GaAs. The concentration [Si] of the Si atoms increased with the dose [S] of the implanted S+ ions as [Si]=1.6×10−6 [S]1.45. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6710-6716 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inclined-mirror Hugoniot measurements were performed on pure AlN polycrystals in the pressure range up to 150 GPa to study the yield properties, phase transition, and equation of state. The Hugoniot-elastic limit (HEL) stress was approximately 9.4 GPa. Above the HEL, the Hugoniot data converged to a static compression curve despite the high thermal conductivity, which indicated that the thermal property is not an important factor in determining the shock yield property. The phase transformation from wurtzite-type (B4) to rock salt-type (B1) structure took place at approximately 19.4 GPa, and was completed by about 75 GPa. The corrected transition pressure at 298 K was 19.2 GPa. Shock velocity (Us) versus particle velocity (Up) relation of the final phase was given by Us=3.27+1.81Up km/s. The Birch–Murnaghan fitting curve of the calculated isothermal compression curve of the B1-type phase roughly coincided with the recent static x-ray diffraction data up to over 100 GPa. The Grüneisen parameter, bulk moduli (K0), and the pressure derivative (K0′) at zero pressure of the B1-type phase were estimated to be 1.51±0.03, 304±4 GPa, and 3.9±0.2 (K0″=−0.02), respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3373-3376 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The electrochemical etching method by Ibe et al. [J. Vac. Sci. Technol. A 8, 3570 (1990)] to fabricate sharp tips for scanning tunneling microscopy was modified by shortening the cutoff time of the etching current after the material wire drops off at the air-electrolyte interface. The tip radius measured by field ion microscopy was successfully reduced to 8 nm when the cutoff time was shortened to 50 ns. The dependence of the field-emitting electron current from the sharpest tips was close to one expected from the Fowler–Nordheim formula with a reasonable value for the emitting area of the tip. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2288-2292 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design and construction of a simple new device for nondestructively monitoring the position of an electron beam is described. By modulating a small portion of the electron-beam current, changes in the amounts of charge induced on the monitor electrodes are detected as currents. These currents are related to the location of the "center of charge" of the electron beam. Calculations and experimental results which illustrate the performance of the device are reported. This device is primarily intended for use in electron-beam ion sources and traps, although it could be applied to other situations where the beam current can be modulated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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