Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2000-2004  (5)
  • 1920-1924
  • 2000  (5)
Source
Material
Years
  • 2000-2004  (5)
  • 1920-1924
Year
  • 1
    Electronic Resource
    Electronic Resource
    Moisture diffusion along the TiN/SiO2 interface and in plasma-enhanced chemical vapor deposited SiO2 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3695-3698 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusivity of moisture along the TiN/SiO2 interface has been determined by imaging the inward diffusion of 18O and 2D from isotopically labeled water using a secondary ion mass spectroscopy (SIMS) technique. The diffusivity, at room temperature, of the 18O and 2D labeled species along the interface are indistinguishable and have a value of 6.0±2.0×10−13 cm2/s, four orders of magnitude faster than bulk diffusivity of the same species in the plasma-enhanced chemical vapor deposition silica, also determined by SIMS. From 8 to 90 °C, the activation energies for interface and bulk diffusivities of the 2D labeled species are found to be 0.21 and 0.74 eV, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289481
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Dielectric cracking produced by electromigration in microelectronic interconnects (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6302-6312 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The development of stress during electromigration along Al lines, constrained within a dielectric in a coplanar test configuration, is measured. It is shown that, above a certain threshold current density, cracking of the dielectric is induced in the vicinity of the anode. Cracking of the dielectric leads to loss of mechanical constraint on the aluminum conductor which, in turn, leads to increases in electrical resistance with continued current flow. The electromigration-induced stresses are determined from the measured frequency shifts induced in a novel ruby strain sensor embedded immediately beneath the interconnect line on a sapphire substrate. The transparency of the sapphire substrate also facilitated the observation of a hitherto unreported form of dielectric cracking, namely cracking from the interconnect along internal interfaces. The observations of dielectric cracking are in agreement with a recent fracture mechanics model. Analysis of the stress data, together with the results of finite element calculations of the strain energy release rate for crack extension, gives a quantitative estimate of the effective valence Z*(=1.3±0.2) for aluminum. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289044
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Piezoelectric contributions to the electrical behavior of ZnO varistors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4430-4438 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Internal stresses exist in ZnO varistors as a result of both crystallographic anisotropy in thermal expansion of the constituents and thermal expansion mismatch between phases. Due to the piezoelectric nature of ZnO, these stresses induce a net electric dipole moment that modifies the grain boundary Schottky barriers and causes an alteration of the varistor current–voltage response in the nonlinear regime. We report Raman piezospectroscopic measurements of residual strains in polycrystalline ZnO and develop a stochastic model for the distribution of potential barrier heights based on the distribution of internal stresses. The model provides a physical basis for barrier height distributions used in electrical network simulations of varistor transport behavior. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373088
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Two-step growth of high-quality GaN by hydride vapor-phase epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1804-1806 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of a low-temperature layer of GaN formed by hydride vapor-phase epitaxy (HVPE) as a template to grow high-quality HVPE films is demonstrated. Using layers formed by reacting GaCl and NH3 at 550 °C and annealed at a growth temperature of 1050 °C, thick films of GaN can be grown by HVPE with fewer than 108 dislocations per cm2. Dislocation densities measured by high-resolution x-ray diffraction, atomic-force microscopy step termination density and plan-view transmission electron miscroscopy reveal that ∼23 μm films have dislocation densities of ∼6×107 cm−2. Obtaining high-quality single-crystal character films was found to be dependent on several factors, most importantly, the rate of temperature increase to growth temperature and the layer thickness. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311600
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Premitotic chromosome individualization in mammalian cells depends on topoisomerase II activity (2000)
    Springer
    Chromosoma 109 (2000), S. 235-244 
    Details
    ISSN: 1432-0886
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract. When DNA topoisomerase II (topo II) activity is inhibited with a non-DNA-damaging topo II inhibitor (ICRF-193), mammalian cells become checkpoint arrested in G2-phase. In this study, we analyzed chromosome structure in cells that bypassed this checkpoint. We observed a novel type of chromosome aberration, which we call Ω-figures. These are entangled chromosome regions that indicate the persistence of catenations between nonhomologous sequences. The number of Ω- figures per cell increased sharply as cells evaded the transient block imposed by the topo II-dependent checkpoint, and the presence of caffeine (a checkpoint-evading agent) potentiated this increase. Thus, the removal of nonreplicative catenations, a process that promotes chromosome individualization in G2, may be monitored by the topo II-dependent checkpoint in mammals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004120000065
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...