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Charge-imaging field-effect transistor (2001)

Chen, L. H. ; Topinka, M. A. ; LeRoy, B. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 79 (2001), S. 1202-1204

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Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Charge-imaging field-effect transistors (FETs) were fabricated from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. These FETs have quantum point contact geometries to minimize the size of the channel and to improve the spatial resolution. The charge noise at T=4.2 K has a 1/f behavior and reaches values (very-much-less-than)1e/Hz1/2 at 30 kHz. The spatial resolution of the FET was measured at liquid He temperatures using a scanned probe microscope with a charged tip. The charge sensitivity of the FET is confined to a disk with full width at half maximum 340 nm. These FETs are suitable for integration onto a GaAs/AlGaAs scanned probe microscopy cantilever. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1395516

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