ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Scanning anode field emission microscopy is used to map the electron emission current I(x,y) under constant anode voltage and the electron extraction voltage V(x,y) under constant emission current as a function of tip position on carbon based thin film emitters. The spatially resolved field enhancement factor β(x,y) is derived from V(x,y) maps. It is shown that large variations in the emission site density (ESD) and current density can be explained in terms of the spatial variation of the field enhancement β(x,y). Comparison of β(x,y) and I(x,y) shows that electron emission currents are correlated to the presence of high aspect ratio field enhancing structures. We introduce the concept of field enhancement distribution f(β), which is derived from β(x,y) maps to characterize the field emission properties of thin films. In this context f(β)dβ gives the number of emitters on a unit surface with field enhancement factors in the interval (β,β+dβ). It is shown experimentally for the carbon thin film emitters investigated that f(β) has an exponential dependence with regard to the field enhancement factor β. The field enhancement distribution function f(β) can be said to give a complete characterization of the thin film field emission properties. As a consequence, the emitted current density and ESD can be optimized by tuning f(β) of the emitting thin film. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1379559
Permalink
