Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 637-639
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Metal–oxide–silicon tunneling diodes with SiO2/Si interface passivated by hydrogen or deuterium are stressed under various constant current conditions. When the energy of injected electrons exceeds a threshold value (∼3 eV), both hydrogen and deuterium passivated devices reveal similar soft breakdown behaviors. On the contrary, when the injected electrons with low energy (〈3 eV) at high current density stress, a giant isotope effect is observed in the deuterated devices due to the resonance between the Si–D bond bending mode and the transverse optical phonon of bulk silicon. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1343477
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