ISSN:
1434-6036
Keywords:
PACS. 78.66.Fd III-V semiconductors – 71.55.Eq III-V semiconductors – 78.40.-q Absorption and reflection spectra: visible and ultraviolet
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract: The optical response of as grown and hydrogenated In0.32Ga0.68As1-yNy/GaAs single quantum wells (y = 0, 0.027) has been investigated from T = 80 K to room temperature by photoreflectance. Three excitonic spectral features detected in the N free sample shift to lower energy in the N containing sample and back to higher energy upon H irradiation of the N containing sample. In the hydrogenated sample, a progressive change with increasing temperature of the nature of the lowest energy transition from an excitonic to a band-to-band character has been explained in terms of an increasing release of carriers from traps formed by H and N clusters. A reduction in the oscillator strength of the lowest energy transition and an increase in the binding energy of the heavy-hole exciton have been explained in terms of an increase in the electron effective mass upon N introduction into the InxGa1-xAs lattice.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1140/epjb/e2002-00355-x
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