ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This paper reports on a 400 watt boost converter using a SiC BJT and a SiC MOSFET asthe switch and a 6 Amp and a 50 Amp SiC Schottky diode as the output rectifier. The converter wasoperated at 100 kHz with an input voltage of 200 volts DC and an output voltage of 400 volts DC.The efficiency was tested with an output loaded from 50 watts to 400 watts at baseplatetemperatures of 25°C, 100°C, 150°C and 200°C. The results show the converter in all cases capableof operating at temperatures beyond the range possible with silicon power devices. While theconverter efficiency was excellent in all cases, the SiC MOSFET and 6 Amp Schottky diode hadthe highest efficiency. Since the losses in a boost converter are dominated by the switching lossesand the switching losses of the SiC devices are unaffected by temperature, the efficiency of theconverter was effectively unchanged as a function of temperature
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1445.pdf
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