ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Use of a transmission electron microscope to irradiate silicon carbide samples has beendemonstrated as a useful additional characterisation technique. The photoluminescence spectra ofcrystal defects introduced in this way have been found to be extremely rich in detail, involvingmore than 50 zero phonon lines. It is perhaps disappointing that relatively few of these opticalcentres have been identified conclusively. Indeed, controversy exists over most of theinterpretations that have been advanced. As a step towards clarifying this situation we have beenstudying many of the more important photoluminescent systems by investigating the dependence ofthe results on the sample n- and p-doping levels, their stoichiometry, the source of supply, theelectron dose, the subsequent annealing history, and by exploiting two new aspects of the techniquethat will be introduced here. A brief review will be given of new results obtained for some of themajor optical centres. Most of the irradiations have been performed at room temperature using300 kV electrons but some were carried out at 750°C
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.313.pdf
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