ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Because of the formation of DPB (Double Positioning Boundary) when starting from ahexagonal 〈0001〉 seed, DPB-free 3C-SiC single crystals have never been reported up to now. In arecent work we showed that, using adapted nucleation conditions, one could grow thick 3C-SiCsingle crystal almost free of DPB [1]. In this work we present the results of a multi-scaleinvestigation of such crystals. Using birefringence microscopy, EBSD and HR-TEM, we findevidence of a continuous improvement of the crystal quality with increasing thickness in the mostdefected area, at the sample periphery. On the contrary, in the large DPB-free area, the SF densityremains rather constant from the interface to the surface. The LTPL spectra collected at 5K on theupper part of samples present a nice resolution of multiple bound exciton features (up to m=5)which clearly shows the high (electronic) quality of our 3C-SiC material
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.99.pdf
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