ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
From the engineering point of view, SiC hot-wall epitaxy is a very important process inSiC semiconductor processes. There are lots of experimental reports on SiC hot-wall epitaxy. Theydiscussed the growth rate, surface morphology, doping concentration, etc. Recently, the effect offace polarity is also made clear. However, each report mentioned the particular results that stronglydepend on the experimental conditions and reactor design. In addition, the discussion with inletcondition such as source gas C/Si ratio, not the depositing surface condition, leads to the confusion.In order to understand and try to design and optimize the hot-wall CVD reactor, a numerical approachis attempted. The authors have tried to make it clear that depositing surface condition might be auniversal parameter of SiC CVD, and the numerical simulation could predict the growth rate, surfacemorphology and doping concentration by taking account of the depositing surface condition. In thisstudy, at first, the recent progress of SiC hot-wall epitaxy in experiment is summarized. Then, thepresent status of its numerical modeling is explained
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.129.pdf
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