ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The transfer by wafer-bonding of single-crystalline SiC thin films to apolycrystalline SiC support to obtain a “quasi-wafer” is an attractive way for lowering thecost of silicon carbide wafers. Such a process needs high quality polycrystalline substrates,with controlled and high-level bulk properties (thermal conductivity, electrical resistivity) andwith very low surface roughness and surface bowing. Currently, polycrystalline SiC waferswhich are available are siliconized SiC or CVD processed SiC wafers. Siliconized ceramicwafers are very heterogeneous (mixture of 3C, 6H, 15R and silicon), while CVD ones are ofbetter quality (homogeneous and textured 3C). However neither the siliconized SiC nor theCVD SiC can be CMP polished with low roughness over large dimension. In this paper,wafers with large and textured grains (〉 1cm) are processed and characterized. The polishingof such structures is studied and optimized to obtain low surface roughness. To meet theserequirements high temperature processes used for single crystal growth were selected.Structural investigations performed on the grown ingots showed an important influence of theused seed since no preferential crystallographic orientation was observed during the growth.The final polishing quality was of high level but step heights were observed between grains
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.71.pdf
Permalink