ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We report on 4H-SiC MOSFET devices implemented on p-type 〈11-20〉-orientedepitaxial layers, using a two-step procedure for gate oxide formation. First is a thin, dry, thermalSiO2 layer grown at 1050°C for 1 hour. Next, is a thick (50 nm) layer of complementary oxidedeposited by PECVD using TEOS as gas precursor. With respect to the standard thermal oxidationprocess, this results in much improvement of the field effect mobility. For the best samples, wefind a peak value in the range of 330 cm2/Vs while, on the full wafer, an average mobility of about160 cm2/Vs is found. Up to now, this is one of the best results ever reported for 4H-SiCMOSFETs
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1051.pdf
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