Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 3807-3809
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on AlGaN/GaN heterostructures and heterostructure field-effect transistors (HFETs) fabricated on high-pressure-grown bulk GaN substrates. The 2d electron gas channel exhibits excellent electronic properties with room-temperature electron Hall mobility as high as μ=1650 cm2/V s combined with a very large electron sheet density ns(approximate)1.4×1013 cm−2. The HFET devices demonstrated better linearity of transconductance and low gate leakage, especially at elevated temperatures. We also present the comparative study of high-current AlGaN/GaN HFETs (nsμ〉2×1016 V−1 s−1) grown on bulk GaN, sapphire, and SiC substrates under the same conditions. We demonstrate that in the high-power regime, the self-heating effects, and not a dislocation density, is the dominant factor determining the device behavior. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126788
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