ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Deep electron and hole traps were studied in a series of high purity 6H-SiC single crystalsgrown by Halide Chemical Vapor Deposition (HCVD) method at various C/Si flow ratios and attemperatures between 2000 oC and 2100 oC. Characterization included Low TemperaturePhotoluminescence (LTPL), Deep Level Transient Spectroscopy (DLTS), Minority Carrier TransientSpectroscopy (MCTS), and Thermal Admittance Spectroscopy (TAS) measurements. Concentrationsof all deep traps were shown to strongly decrease with increased C/Si flow ratio and with increasedgrowth temperature. The results indicate that the majority of deep centers in 6H-SiC crystals grown byHCVD are due to native defects or complexes of native defects promoted by Si-rich growthconditions. The observed growth temperature dependence of residual donor concentration and trapsdensity is explained by increasing the effective C/Si ratio at higher temperatures for the same nominalratio of C and Si flows
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.497.pdf
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