ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We have recently explored the nature and stability of native defects in high-puritysemi-insulating 4H-SiC bulk substrates grown by PVT and HTCVD methods after post-growthanneal treatments up to 2400oC using electron paramagnetic resonance (EPR) and low-temperaturephotoluminescence (PL) experiments. In the present study we have extended these investigations toSI 4H-SiC subjected to the same post-growth high-temperature anneal treatments, where significantlyenhanced carrier lifetimes have been reported for such conditions, but cooled at different rates rangingfrom ~2-25oC/min. Previously, the intensities of the native defects decreased monotonically withanneals from 1200–1800oC; however, it was recently observed that several of these defects reappearafter annealing at 2100oC and above. Our results illustrate the effects of the post-growth annealtreatments and cool-down rates on the concentrations of native defects
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.389.pdf
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