ISSN:
1662-9752
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Maschinenbau
Notizen:
A variety of silicon carbide (SiC) detectors have been developed to study their sensitivity,including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and singlephoton-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, SiCphoto-detectors show excellent sensitivity. The specific detectivity, D*, of SiC photodiodes aremany orders of magnitude higher than the D* of other solid state detectors, and for the first time,comparable to that of photomultiplier tubes (PMTs). SiC APDs have also been fabricated to pursuethe ultimate sensitivity. By operating the SiC APDs at a linear mode gain over 106, single photoncountingavalanche photodiodes (SPADs) in UV have been demonstrated
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1461.pdf
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