ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A variety of silicon carbide (SiC) detectors have been developed to study their sensitivity,including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and singlephoton-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, SiCphoto-detectors show excellent sensitivity. The specific detectivity, D*, of SiC photodiodes aremany orders of magnitude higher than the D* of other solid state detectors, and for the first time,comparable to that of photomultiplier tubes (PMTs). SiC APDs have also been fabricated to pursuethe ultimate sensitivity. By operating the SiC APDs at a linear mode gain over 106, single photoncountingavalanche photodiodes (SPADs) in UV have been demonstrated
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1461.pdf
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