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  • 2005-2009  (39)
  • 2000-2004  (125)
  • 1955-1959  (99)
  • 1915-1919  (15)
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Year
  • 1
    Unknown
    Lexington, Ky : University Press of Kentucky
    Religion in the South  
    Keywords: Southern States, Church history. ; Revivals, Southern States.
    Pages: xvii, 236 p., [4] p. of plates
    ISBN: 0-8131-7065-6
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  • 2
    Unknown
    Washington, D.C : Brookings Institution Press
    Keywords: Old age pensions, Government policy, United States, Congresses. ; Old age pensions, United States, Congresses. ; Pension trusts, United States, Congresses. ; Retirement income, Government policy, United States, Congresses. ; Social security, United States, Congresses.
    Notes: The transition to hybrid pensions plans in the United States : an empirical analysis / Robert L. Clark and Sylvester J. Schieber -- What people don't know about their pensions and Social Security / Alan L. Gustman and Thomas L. Steinmeier -- Financial education and private pensions / Dean M. Maki -- Life-cycle saving, limits on contributions to DC pension plans, and lifetime tax benefits / Jagadeesh Gokhale, Laurence J. Kotlikoff, and Mark J. Warshawsky -- The effects of Social Security reform on private pensions / Andrew A. Samwick -- Pension choices with uncertain tax policy / Joel M. Dickson -- The design and cost of pension guarantees / Kent Smetters -- Effects of nondiscrimination rules on pension participation / Robert L. Clark, Janemarie Mulvey, and Sylvester J. Schieber -- Asset location for retirement savers / James M. Poterba, John B. Shoven, and Clemens Sialm -- Longevity-insured retirement distributions from pension plans : market and regulatory issues / Jeffrey R. Brown and Mark J. Warshawsky
    Pages: viii, 406 p.
    ISBN: 0-8157-9642-0
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  • 3
    Keywords: Indonesia, Armed Forces, Political activity. ; Indonesia, Armed Forces, Reorganization. ; Indonesia, Military relations, United States. ; Indonesia, Politics and government, 20th century. ; United States, Military relations, Indonesia. ; Civil-military relations, Indonesia.
    Pages: xxvi, 157 p.
    ISBN: 0-8330-3402-2
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 62 (1958), S. 81-84 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 62 (1958), S. 271-280 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 62 (1958), S. 286-288 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7973-7976 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have calculated the crystal-field splitting of the energy levels of Pr3+ in GaN and have compared these results to an analysis reported recently of the photoluminescence and the cathodoluminescence spectra of Pr3+ implanted in GaN by metal organic chemical vapor deposition on sapphire substrates. The lattice location of Pr in GaN determined recently by the emission channeling technique, provides direct evidence that substitutional Ga sites are thermally stable lattice positions for Pr. The lattice-sum calculations with Pr occupying Ga sites include effective ionic charges, multipole polarizabilities, and structural information also available in the literature. From the calculations, we conclude that the majority of the reported emission spectra is associated with Pr3+ ions in a common site with transitions from excited 3P0 and 3P1 states to crystal-field split multiplets, 3H4 (the ground state), 3FJ, and 1G4. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4189-4193 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rapid growth of microelectromechanical systems (MEMS) industry has introduced a need for the characterization of thin film properties at all temperatures encountered during fabrication and application of the devices. A technique was developed to use MEMS test structures for the determination of the difference in thermal expansion coefficients (α) between poly-Si and SiO2 thin films at high temperatures. The test structure consists of multilayered cantilever beams, fabricated using standard photolithography techniques. An apparatus was developed to measure the thermally induced curvature of beams at high temperatures using imaging techniques. The curvatures measured were compared to the numerical model for multilayered beam curvature. The model accounts for the variation in thermomechanical properties with temperature. The beams were designed so that the values of Young's moduli had negligible effect on beam curvature; therefore, values from literature were used for ESi and ESiO2 without introducing significant error in curvature analysis. Applying this approximation, the difference in thermal expansion coefficients between αSi and αSiO2 was found to increase from 2.9×10−6 to 5.8×10−6 °C−1 between room temperature and 900 °C. These results suggest that the α for poly-Si thin films may be significantly higher than values for bulk, crystalline Si. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6761-6763 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of (001)-oriented Sr2FeMoO6 have been epitaxially deposited or LaAlO3 and SrTiO3 (001) substrates by pulsed laser deposition. The deposition conditions were optimized. Single-phase Sr2FeMoO6 was obtained in 100 mTorr 99.999% Ar gas at 825 °C. Transport and magnetic data showed a metallic temperature dependence and a saturation magnetization Ms at 10 K of 3.2μB/f.u. However, the Curie temperature TC(approximate)380 K was reduced from 415 K found for tetragonal polycrystalline best ceramics, which lowers Ms at 300 K in the thin films to 1.5μB/f.u. compared to 2.2μB/f.u. in the ceramics. A low remanence was attributed to the presence of antiphase boundaries. A Wheatstone bridge arrangement straddling a bicrystal boundary was used to verify that spin-dependent electron transfer through a grain boundary and not an antiphase boundary is responsible for the low-field magnetoresistance found in polycrystalline samples below TC. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7159-7163 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NdSc3(BO3)4 (NdSB) can be grown as a nonlinear optical crystal having hexagonal (huntite) structure. The crystal has important spectroscopic properties suitable for various applications in photonics. The observed crystal-field splitting of the energy levels of Nd3+(4f3) has been identified based on analyses of the fluorescence, absorption, and excitation spectra obtained at 13, 80, and 300 K. A detailed crystal-field splitting calculation in which initial crystal-field parameters Bnm are established from lattice–sum calculations gives good agreement to the observed splitting. Experimental branching ratios and fluorescence lifetimes are reported and are compared with calculated values. The spectroscopic properties of Nd3+ in NdSB are also compared with values obtained for Nd3+ as a dopant in the nonlinear crystal YAl3(BO3)4. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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