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  • 2005-2009  (1)
  • 1990-1994  (10)
  • 1985-1989  (3)
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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1325-1326 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A high current O+ ion source is desirable for applications to SIMOX and materials modification. To meet the requirements of this field, a new type of nonfilament high current O+ ion source has been developed successfully in our institute. Using O2 as discharge material, the typical extraction characteristics are as follows: The total oxygen ions current is 100 mA, of which the content of O+ is 80%, beam current density is larger than 200 mA/cm2 when the power consumption is 100 W; therefore the economic property is 1 mA/W. Feeding N2, the total extraction beam current is 100 mA of which 70% is N+ while the power consumption is 135 W.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 896-898 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High-dose O+ implantation of Si between 450 and 500 keV is investigated to better understand the mechanisms responsible for ion-induced growth of damage, especially in the top Si layer ahead of the region where a buried oxide forms. Two distinct states are identified in this Si layer over an extended range of fluence (≥1018 cm−2): a low-density defect state and a high-density one. These states are observed at all irradiation temperatures, including ambient temperature. The transition between the states is rather abrupt with the onset at a high fluence, which decreases with decreasing temperature. The existence of the low-density state offers a possibility of forming dislocation-free silicon-on-insulator wafers, even for ambient temperature irradiations. A processing method for achieving such wafers is discussed.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3580-3582 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ion-induced damage accumulation and growth during separation by implantation of oxygen (SIMOX) processing were studied. Silicon wafers were implanted with 450 keV oxygen ions at an elevated temperature with doses of 0.8×1018 and 1.1×1018 cm−2. At the lower dose, the silicon overlayer was found to be highly strained but free of dislocations, while a distinct band of dislocations was observed in the top Si layer at the higher dose. The occurrence of this band is shown to correlate with strain relief in the overlayer. Rutherford backscattering spectrometry, cross-section transmission electron microscopy, and x-ray diffraction were used to characterize this damage so that its role in releasing the accumulated strain during ion implantation could be better understood. Additional insight was gained into the nature of the damage formed at the different doses by studying the thermal stability at 900 °C. Markedly different thermal behaviors were observed and are correlated to changes in the strain state of each sample. These results strongly suggest that dislocation formation in the Si overlayer during the SIMOX process is in response to strain accumulation in the lattice and that dislocation-free layers can be formed by appropriate intervention prior to the yield point. This mechanism for dislocation formation is thought to be generally operative under extreme irradiation conditions and, therefore, will be important to other ion-beam synthesis processes such as buried silicide formation.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    ISSN: 1520-5827
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 98 (1994), S. 12459-12461 
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    Berlin, Germany : Blackwell Verlag GmbH
    Plant breeding 124 (2005), S. 0 
    ISSN: 1439-0523
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Land- und Forstwirtschaft, Gartenbau, Fischereiwirtschaft, Hauswirtschaft
    Notizen: Stylosanthes guianensis, belonging to the genus Stylosanthes, is one of the most important tropical forage legumes and is native to South and Central America and Africa. Anthracnose, caused by the fungus Colletotrichum gloeosporioides (Penz.) Sacc., is a major constraint to the extensive use of Stylosanthes as tropical forage. Forty-two accessions of S. guianensis were assessed with amplified fragment length polymorphism (AFLP) for genetic diversity and for resistance to anthracnose. In AFLP analysis, four selective primer combinations screened from 96 primer combinations were used to analyse these accessions, and a total of 225 clear bands were used for genetic similarity (GS) analysis, showing a 95.5% level of polymorphism on average. GS from 31.0% to 95.0% among the accessions was calculated with ntsys-pc software. The dendrogram was constructed with unweighted pair group method of averages (UPGMA) based on the AFLP data, and five clusters were defined at 48% GS. Two typical strains of C. gloeosporioides from Stylosanthes in China were used for anthracnose resistance screening. Most of the plant accessions showed variation in the reaction to two strains, and the correlation of resistance had a value of 0.904 (P 〈 0.01), suggesting common resistance to the two strains. The resistance accessions were randomly distributed in different groups of UPGMA clustering. These results demonstrate that AFLP analysis is an efficient method for evaluating the genetic diversity among S. guianensis accessions.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Biochemistry 32 (1993), S. 12007-12012 
    ISSN: 1520-4995
    Quelle: ACS Legacy Archives
    Thema: Biologie , Chemie und Pharmazie
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Publishing Ltd
    International journal of immunogenetics 13 (1986), S. 0 
    ISSN: 1744-313X
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Biologie , Medizin
    Notizen: We immunized a BALB/c mouse with the lambda-bearing rat IgG, myeloma IR31, fused its spleen cells with the hybridoma parent line P3.X63.Ag8.653, and isolated a monoclonal antibody (G33/11) directed against rat immunoglobulin lambda chains. We used this antibody to classify two existing rat hybridomas as lambda-bearing proteins (D4.37HL.252 and PC61.5, and isolated one new lambda-bearing rat IgM hybridoma, G36/1. All the normal inbred rat sera that were tested contained lambda-bearing Ig as detected by G33/11, at levels ranging from 1.5% to 13% of the total serum Ig, the mean value being 7.9%. This antibody will be valuable for broadening our understanding of the immunogenetics of the rat, and for the characterization of monoclonal antibodies made in this species.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 9
    ISSN: 1432-0983
    Schlagwort(e): Chloroplast genome ; Inversion ; Transposon ; Spinach
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie
    Notizen: Summary A 7,022 by BamHI-EcoRI fragment, located in the inverted repeat of spinach chloroplast, has been sequenced. It contains a 2131 codon open reading frame (ORF) homologous to both tobacco ORFs 581 and 1708, and to Marchantia ORF 2136. Relative to the Marchantia chloroplast genome, spinach ORF 2131 is located at the end of a large inversion; the other end point is close to trnL, the position of which is the same in Marchantia, tobacco and spinach. In Marchantia, two 8 by direct repeats flanking two 10 by indirect repeats are present near the end points of the inversion. These repeats may result from a transposon-mediated insertion which would have facilitated the subsequent inversion. From a comparison of the gene organization of the spinach, tobacco, and Marchantia genomes in this region, we propose a step-wise process to explain the expansion of the inverted repeat from a Marchantia-like genome to the spinach/tobacco genome.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Springer
    Journal of materials science 28 (1993), S. 3731-3740 
    ISSN: 1573-4803
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau
    Notizen: Abstract The results of experiments on the icosahedral to crystalline transformation of melt-spun Al51Cu12.5Li16.5Mg20 are reported. The microstructural characteristics of the alloy, in all stages of the transformation, have been determined using a combination of transmission electron microscopy, X-ray diffraction and differential scanning calorimetry. The as-spun alloy consists of icosahedral grains with a low volume fraction of quenched-in crystallites. The quasilattice constant is calculated to be 0.505 nm. Upon annealing at 394 °C for 20 min, the icosahedral phase completely transforms to Al5Cu(Li, Mg)3 (a b c c phase), aluminium and a hexagonal phase. The orientation relationships and chemical compositions of all phases involved are established. Electron microscopy reveals planar defects in all the crystalline phases (except aluminium). The planar defects in the b c c phase are on {1 1 0} and {1 0 0}-type planes. Defects in the hexagonal phase are found to be on {0001} and {11 ¯20}-type planes.
    Materialart: Digitale Medien
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