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  • 1
    Electronic Resource
    Electronic Resource
    Multiple scattering and the 200 reflection in silicon and germanium (1988)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 44 (1988), S. 22-25 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Absolute measurements of the 200 reflection in Si and Ge at various azimuthal orientations are compared with N-beam calculations of the integrated intensity. All of the non-zero integrated intensity is accounted for by multiple-beam scattering. The measurements match the calculations on the assumption that F200 = 0.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767387008006
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  • 2
    Electronic Resource
    Electronic Resource
    Study of epitaxial platinum thin films grown by metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3735-3740 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metalorganic chemical vapor deposition technique has been successfully applied to the growth of epitaxial platinum thin films on (100) surfaces of single-crystal potassium tantalate (KTaO3) and strontium titanate (SrTiO3). Platinum thin films grown on KTaO3 (100) at a rate of 70 nm/h showed strong Rutherford backscattering spectroscopy (RBS)/channeling effects with a χmin of 4%. In-plane φ and θ-2θ scan x-ray diffraction analysis demonstrated the three-dimensional epitaxial alignment of the platinum film with the KTaO3 substrate. Transmission electron micrographs viewed in cross section provided additional information regarding the nature of the epitaxial Pt-KTaO3 interface. The room-temperature resistivity of a 60-nm-thick Pt film on KTaO3 (100) was 12.0 μΩ cm. X-ray diffraction and pole-figure analysis showed that in the case of Pt films deposited on either fused quartz or Si (100) surfaces, the resulting films were polycrystalline and were fully textured with 〈111(approximately-greater-than) orientations perpendicular to the substrate surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352293
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  • 3
    Electronic Resource
    Electronic Resource
    Bend strain tolerance of critical currents for YBa2Cu3O7 films deposited on rolled-textured (001)Ni (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1904-1906 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting YBa2Cu3O7/CeO2/YSZ/CeO2 multilayer structures were grown on rolled-textured (001)Ni using pulsed-laser deposition. Critical current densities greater than 1 MA/cm2 were obtained for relatively thick YBa2Cu3O7 films. The compressive and tensile bend strain tolerance of critical currents for the YBa2Cu3O7 films deposited on these rolling-assisted biaxially textured substrates was also determined. These conductors retained up to 80% of their unstrained critical currents for applied compressive bend diameters as small as 1.5 cm and tensile bend diameters of 3.2 cm. The degradation of Jc is caused by the formation and propagation of transverse cracks. The results also suggest a correlation between bend-strain tolerance for these coated conductors and total oxide layer thickness. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122321
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  • 4
    Electronic Resource
    Electronic Resource
    SrCuO2/(Sr,Ca)CuO2 superlattice growth by pulsed-laser deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2869-2871 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superlattice structures, consisting of SrCuO2 and (Sr,Ca)CuO2 layers in the tetragonal, "infinite layer'' crystal structure, have been grown by pulsed-laser deposition. Superlattice chemical modulation is observed for structures with SrCuO2 and (Sr,Ca)CuO2 layers as thin as a single unit cell (∼3.4 A(ring)). X-ray diffraction intensity oscillations, due to the finite thickness of the film, indicate that these films are extremely flat with a thickness variation of only ∼20 A(ring) over a length scale of several thousand angstroms. These results show that unit-cell control of (Sr,Ca)CuO2 growth is possible in an oxygen pressure regime in which in situ surface analysis is not possible. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112519
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial superconducting thin films of YBa2Cu3O7−x on KTaO3 single crystals (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1063-1065 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown thin YBa2Cu3O7−x films on single-crystal (001) KTaO3 substrates by means of coevaporation of Y, BaF2, and Cu, followed by an ex situ anneal in wet oxygen. The films are epitaxial in three dimensions, consisting of grains with either the c or the a axis of the YBa2Cu3O7−x unit cell perpendicular to the substrate. Films with a composition close to the 1:2:3 cation ratio exhibit sharp superconducting transitions at 90 K and critical current densities in excess of 0.3 MA/cm2 in zero magnetic field at 77 K. In Cu-rich films, the Y2Ba4Cu8O16–x phase with a Tc of 80 K is formed in grains with the c axis perpendicular to the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101426
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  • 6
    Electronic Resource
    Electronic Resource
    Heteroepitaxial structures of SrTiO3/TiN on Si(100) by in situ pulsed laser deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6720-6724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality ceramics based heteroepitaxial structures of oxide-nitride-semiconductors, i.e., SrTiO3/TiN/Si(100) have been fabricated by in situ pulsed laser deposition. The dependence of substrate temperature and oxygen partial pressure on the crystalline quality of the SrTiO3 films on Si with epitaxial TiN template has been examined. We found that epitaxial growth occurs on TiN/Si(100) above 500 °C, initially at a reduced O2 pressure (10−6 Torr), and followed by a deposition in the range of 5–10×10−4 Torr. X-ray diffraction (aitch-theta, ω, and Φ scans) and transmission electron microscope (TEM) results revealed an excellent alignment of SrTiO3 and TiN films on Si(100) with a cube-on-cube epitaxy. Rutherford backscattering and ion channeling results show a channeling minimum yield (χmin) of ∼13% for the SrTiO3 films. High-resolution TEM results on the SrTiO3/TiN interface show that the epitaxial SrTiO3 film is separated from the TiN by an uniform 80–90 A(ring) crystalline interposing layer presumably of TiNxO1−x (oxy-nitride). The SrTiO3 film fabricated at 700 °C showed a high relative dielectric constant of 312 at the frequency of 1 MHz. The electrical resistivity and the breakdown field of the SrTiO3 films were more than 5×1012 Ω cm and 6×105 V cm−1, respectively. An estimated leakage current density measured at an electric field of 5×105 V/cm−1 was less than 10−7 A/cm2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363798
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of Ge, Si, and SiGe nanocrystals in SiO2 matrices (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4386-4389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystals of group-IV semiconductor materials (Si, Ge, and SiGe) have been fabricated in SiO2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystals has been studied by transmission electron microscopy. Critical influences of the annealing temperatures and implantation doses on the nanocrystal size distributions are demonstrated with the Ge-implanted systems. Significant roughening of the nanocrystals occurs when the annealing temperature is raised above the melting temperature of the implanted semiconductor material. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359843
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  • 8
    Electronic Resource
    Electronic Resource
    GaAs nanocrystals formed by sequential ion implantation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1876-1880 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sequential ion implantation of As and Ga into SiO2 and α-Al2O3 followed by thermal annealing has been used to form zinc-blende GaAs nanocrystals in these two matrices. In SiO2, the nanocrystals are nearly spherical and randomly oriented, with diameters less than 15 nm. In Al2O3, the nanocrystals are three dimensionally aligned with respect to the crystal lattice. Infrared reflectance measurements show evidence for surface phonon modes in the GaAs nanocrystals in these matrices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361088
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial ZnS films grown on GaAs (001) and (111) by pulsed-laser ablation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7818-7822 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed KrF (248 nm) laser ablation of a polycrystalline ZnS target has been used to grow very smooth and carbon-free, epitaxial ZnS thin films on GaAs (001) and (111). Films were grown at temperatures of 150–450 °C, using a rotating substrate heater and deposition geometry that produces highly uniform film thickness, without nucleation or surface-roughening problems. X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) show that the ZnS films are fully epitaxial (in-plane aligned). Films grown at the optimum temperature of 325 °C have x-ray rocking curve widths that are indistinguishable from molecular-beam-epitaxy-grown ZnS/GaAs films of the same thickness. Rutherford backscattering spectrometry and HRTEM show that in films ∼275 nm thick, the ∼150 nm nearest the GaAs-ZnS interface is highly faulted, due to the ∼4.1% lattice mismatch and/or the low ZnS stacking fault energy, but the upper ∼125 nm is much less defective. The anisotropy of the ZnS epitaxial growth rate between the GaAs (001) and GaAs (111) surfaces was found to be slightly temperature dependent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353956
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  • 10
    Electronic Resource
    Electronic Resource
    MeV, self-ion implantation in Si at liquid nitrogen temperature; a study of damage morphology and its anomalous annealing behavior (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2081-2086 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage formed by 1.25 MeV, self-ions in Si at liquid nitrogen temperature was studied. A dominant feature of the damage for moderate ion fluences is the presence of isolated amorphous regions over the range of the ions. The microstructure of this damage is detailed and formation mechanisms discussed. The amorphous regions are shown to give rise to strain in the surrounding crystal lattice which varies with ion dose in a complicated manner. The annealing behavior of the damage was studied and two distinct, low-temperature stages observed. Different mechanisms are shown to be responsible for each stage including a transient mechanism at 300 °C initiated by the release of defects from damage clusters, and enhanced crystallization of amorphous Si at 400 °C due to lattice stress.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346561
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