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  • 1
    Electronic Resource
    Electronic Resource
    Metalorganic Chemical Vapor Deposition of High-T〈sub〉c〈/sub〉 Superconducting Thin Films (1993)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 130-132 (Jan. 1993), p. 255-268 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/00/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.130-132.255.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Raman scattering characterization of high-quality Cd1−xMnxTe films grown by metalorganic chemical vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6861-6863 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cd1−xMnxTe films (thickness ∼0.5 μm, x=0.10–0.37) have been grown by metalorganic chemical vapor deposition on commercial GaAs and glass substrates with and without buffer layers of CdTe and CdS. Raman scattering shows the films to be of high quality, despite the large film-substrate lattice mismatch. CdTe-like and MnTe-like phonon lines are sharp and strong in first and second order with widths ≤10 cm−1, and clearly appear in combinations up to fourth order. Raman and photoluminescence analysis also establish an optimum growth temperature and limits on the fraction of Mn.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341977
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  • 3
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition of [100] textured MgO thin films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2542-2544 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the results of a recent study on the deposition of [100] textured MgO films on fused quartz substrates by using the metalorganic chemical vapor deposition technique. Magnesium β-diketonate was used as the metal source and the growth rate of the film was about 0.4 μm/h at 740 °C in a horizontal warm wall reactor. X-ray diffraction experiments provided evidence that the MgO films on fused quartz were fully textured with [100] orientation perpendicular to the substrate surface. The films had a very smooth surface morphology and optical transparency with an index of refraction of 1.71.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101044
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  • 4
    Electronic Resource
    Electronic Resource
    c-axis oriented YBa2Cu3O7−x superconducting films by metalorganic chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 380-382 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly textured single phase superconducting YBa2Cu3O7−x films have been successfully grown on the yttria-stabilized zirconia (100) substrates by using the metalorganic chemical vapor deposition technique. The as-deposited films grown at 650 °C were homogeneous mixtures of the related metal oxides and carbonates. Subsequent thermal annealing under oxygen flow yielded single phase superconducting films whose thickness corresponded to the deposition rates of approximately 10 μm/h. After the post-annealing the films deposited on the yttria-stabilized zirconia substrates exhibited a highly textured x-ray pattern with c axis perpendicular to the substrate surface. These films show an onset superconducting transition temperature of 93 K with the resistance becoming zero at 84 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101378
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  • 5
    Electronic Resource
    Electronic Resource
    Study of epitaxial platinum thin films grown by metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3735-3740 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metalorganic chemical vapor deposition technique has been successfully applied to the growth of epitaxial platinum thin films on (100) surfaces of single-crystal potassium tantalate (KTaO3) and strontium titanate (SrTiO3). Platinum thin films grown on KTaO3 (100) at a rate of 70 nm/h showed strong Rutherford backscattering spectroscopy (RBS)/channeling effects with a χmin of 4%. In-plane φ and θ-2θ scan x-ray diffraction analysis demonstrated the three-dimensional epitaxial alignment of the platinum film with the KTaO3 substrate. Transmission electron micrographs viewed in cross section provided additional information regarding the nature of the epitaxial Pt-KTaO3 interface. The room-temperature resistivity of a 60-nm-thick Pt film on KTaO3 (100) was 12.0 μΩ cm. X-ray diffraction and pole-figure analysis showed that in the case of Pt films deposited on either fused quartz or Si (100) surfaces, the resulting films were polycrystalline and were fully textured with 〈111(approximately-greater-than) orientations perpendicular to the substrate surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352293
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  • 6
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition of Tl2CaBa2Cu2Oy superconducting thin films on sapphire (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1258-1260 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Tl2CaBa2Cu2Oy thin films have been successfully grown on the single-crystal sapphire (11¯02) substrate by using the metalorganic chemical vapor deposition technique. The growth rate of the films was about 5 μm/h. The as-deposited film was post-annealed in a partially sealed ceramic crucible in the presence of a Tl2Ca2Ba2Cu3Oy pellet to achieve the superconducting phase. The x-ray data show strong diffraction from the Tl2CaBa2Cu2Oy superconducting phase in addition to the trace amounts of Ca2CuO3 and BaCO3. Superconducting transition temperatures with onset above 100 K and zero resistance at 94 K can be obtained by further heat treatment at 500 °C in oxygen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101892
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence of Cd1−xMnxTe films grown by metalorganic chemical vapor deposition (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1711-1716 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cd1−x Mnx Te (CMT) films grown by metalorganic chemical vapor deposition on GaAs, CdTe/GaAs, and CdS/SnO2 /glass (CSG) have been studied at 2 and 80 K by photoluminescence (PL). Analysis of the CMT bandedge peak yields Mn concentration x and indicates the degree of stress in the films due to lattice mismatch with the substrates, which also causes a blue shift of the PL band with temperature. A CdTe buffer layer greatly reduces stress and resulting defects. PL spectra from polycrystalline CMT films on commercial CSG wafers, reported for the first time, show a strong band near 1.62 eV which may represent states at the CMT-CdS interface. In CMT/CdTe/GaAs, we see evidence of front-to-back inhomogeneity in the CMT film which may appear in layered form.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344391
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  • 8
    Electronic Resource
    Electronic Resource
    MeV ion channeling studies of (111) CdTe films on (111) GaAs substrates (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5096-5098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Group II-VI compound semiconductors such as CdTe can be grown epitaxially on III-V materials such as GaAs. These films possess better physical properties than their bulk-grown counterparts. This work explores the (111) CdTe/(111) GaAs system by means of MeV ion channeling. Good epitaxy is found (backscatter minimum yields of 15%) for a thickness greater than 1000 A(ring), which is remarkable considering the 14% lattice mismatch between film and substrate. A narrowing of the Cd angular scan suggests Cd atom displacement. A model based on Te vacancies is presented to describe our data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343738
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  • 9
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition of PbTe films on GaAs substrates (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6136-6139 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PbTe films on GaAs substrates were grown by metalorganic chemical vapor deposition for the first time, at substrate temperatures as low as 300 °C. Films grown directly on GaAs below a substrate temperature of 400 °C showed (111) orientation on (100) GaAs and (100) orientation on (111) GaAs. However, above 400 °C on GaAs and on CdTe buffer layers, the films followed the orientation of GaAs and CdTe, respectively. Hall measurements showed n-type conductivity in PbTe films grown directly on GaAs regardless of the Te/Pb input gas ratio and substrate temperature. The conductivity type of PbTe films grown on CdTe buffer layers depended on the input gas ratio of Te/Pb. The resistivity measured by Hall measurement was higher than that determined from infrared data, suggesting microcracks in the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350421
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  • 10
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition of BaTiO3 thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 767-772 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a recent study on the in situ deposition of single phase BaTiO3 thin films by using the metalorganic chemical vapor deposition technique. The effects of growth parameters on the characteristics of the thin films were investigated in the substrate temperature range of 550–800 °C. Barium β-diketonate and titanium isopropoxide were used as the metal sources. Growth rates ranging from submicron to several microns per hour have been deposited on various substrates in an inverted vertical warm-wall reactor. X-ray diffraction data and Rutherford backscattering spectra provided the evidence for single BaTiO3 phase. Scanning electron microscopy was used to study the surface and the cross-sectional morphology of the films. Dielectric constant of the as-deposited film was around 250 at room temperature. The resistivity of the films were greater than 109 Ω cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347362
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