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  • 1
    Electronic Resource
    Electronic Resource
    Study of epitaxial platinum thin films grown by metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3735-3740 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metalorganic chemical vapor deposition technique has been successfully applied to the growth of epitaxial platinum thin films on (100) surfaces of single-crystal potassium tantalate (KTaO3) and strontium titanate (SrTiO3). Platinum thin films grown on KTaO3 (100) at a rate of 70 nm/h showed strong Rutherford backscattering spectroscopy (RBS)/channeling effects with a χmin of 4%. In-plane φ and θ-2θ scan x-ray diffraction analysis demonstrated the three-dimensional epitaxial alignment of the platinum film with the KTaO3 substrate. Transmission electron micrographs viewed in cross section provided additional information regarding the nature of the epitaxial Pt-KTaO3 interface. The room-temperature resistivity of a 60-nm-thick Pt film on KTaO3 (100) was 12.0 μΩ cm. X-ray diffraction and pole-figure analysis showed that in the case of Pt films deposited on either fused quartz or Si (100) surfaces, the resulting films were polycrystalline and were fully textured with 〈111(approximately-greater-than) orientations perpendicular to the substrate surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352293
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  • 2
    Electronic Resource
    Electronic Resource
    Atomic-resolution chemical analysis using a scanning transmission electron microscope (2006)
    [s.l.] : Nature Publishing Group
    Nature 444 (2006), S. 235-235 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Nature 366, 143–146 (1993) In this Letter, we reported that it was possible to undertake chemical analysis with atomic resolution in a scanning transmission electron microscope—a capability that has subsequently been demonstrated ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature05262
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  • 3
    Electronic Resource
    Electronic Resource
    Z-contrast investigation of the ordered atomic interface of CoSi2/Si(001) layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3608-3610 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The atomic structure of mesotaxial CoSi2/Si(001) interfaces has been investigated by Z-contrast scanning transmission electron microscopy. The directly interpretable images reveal a 2×1 ordered structure at the interface, which is clearly seen to involve a doubling of the periodicity of the interfacial Co atoms. From these high-resolution images, we deduce a new structure model for the CoSi2/Si(001) interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111214
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  • 4
    Electronic Resource
    Electronic Resource
    Reliable single-target sputtering process for high-temperature superconducting films and devices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 444-446 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a simple, single-target magnetron sputtering process for films of high-temperature superconductors involving an off-axis sputtering geometry. The process lends itself both to film growth with high-temperature post-anneals and to low-temperature in situ film growth. The post-anneal process routinely yields YBa2Cu3O7−x films on SrTiO3 substrates that are fully superconducting at 86–89 K. Current densities at 77 K range from 104 to 8×105 A/cm2. A single-level superconducting quantum interference device (dc SQUID), made by photolithographically patterning a low current density film, has a flux noise level at 77 K of 3×10−4 Φ0/(Hz)1/2 at 20 Hz, dominated by low-frequency noise associated with flux motion in the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100615
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  • 5
    Electronic Resource
    Electronic Resource
    The effect of deposition rate on the growth of epitaxial Ge on GaAs (100) (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1361-1370 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of deposition rate in the growth of Ge films on GaAs (100) was investigated using a new supersonic free-jet growth technique capable of achieving epitaxial growth rates several orders of magnitude higher than were previously available. The high growth rates are due to two factors: (1) the high arrival rate of digermane source molecules at a heated GaAs surface, and (2) the high thermal decomposition rate of digermane. Dramatic improvements in surface smoothness were observed with increasing deposition rate, while keeping all other deposition parameters fixed. When the arrival rate of digermane molecules was too high, amorphous films were deposited, in agreement with kinetic considerations. The supersonic free-jet growth technique and the microstructural and electrical properties of the resulting Ge films are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345691
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  • 6
    Electronic Resource
    Electronic Resource
    Hydrogen-assisted pulsed-laser deposition of (001)CeO2 on (001) Ge (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1677-1679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of epitaxial (001)CeO2 on a (001) Ge surface using a hydrogen-assisted pulsed-laser deposition method is reported. Hydrogen gas is introduced during film growth in order to reduce or eliminate the presence of the GeO2 from the semiconductor surface during the initial nucleation of the metal–oxide film. The hydrogen partial pressure and substrate temperature are selected to be sufficiently high such that the germanium native oxides are thermodynamically unstable. The Gibbs free energy of CeO2 is larger in magnitude than that of the Ge native oxides, making it more favorable for the metal–oxide to reside at the interface in comparison to the native Ge oxides. By satisfying these criteria, the metal–oxide/semiconductor interface is shown to be atomically abrupt with no native oxide present. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126133
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  • 7
    Electronic Resource
    Electronic Resource
    Long-range ferroelectric interactions in KTaO3/KNbO3 superlattice structures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2535-2537 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Symmetric superlattice structures consisting of alternating atomic-scale layers of KTaO3 and KNbO3 with variable periodicity were grown on KTaO3 substrates by pulsed laser deposition. The in-plane structure of KNbO3 closely matches that of the KTaO3 substrate, resulting in KTaO3/KNbO3 heterostructures that are uniformly strained in-plane without misfit dislocations. This strain imposes an in-plane KNbO3 lattice spacing identical to that of the KTaO3 substrate for the temperature range 30 °C〈T〈700 °C, and a tetragonal-to-tetragonal transition is observed whose phase transition temperature Tc depends on the KNbO3 layer thickness. The in-plane strain results in a significant increase in this ferroelectric-paraelectric Tc for superlattices with relatively thick KNbO3 layers (Tc=535 °C for a 17 nm thick layer, as compared to 435 °C for bulk KNbO3) and for K(Nb0.5Ta0.5)O3 random-alloy thin films. As the superlattice period decreases, a reduction of Tc is observed. For superlattices with periodicities of 50 Å or less, the Curie temperature is identical to that of the K(Ta0.5Nb0.5)O3 random-alloy film, indicating significant long-range ferroelectric coupling across the KTaO3 layers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121411
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  • 8
    Electronic Resource
    Electronic Resource
    Electromigration studies in amorphous and polycrystalline alloys (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 102-103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first direct comparisons of electromigration in amorphous and polycrystalline thin-film samples of the same composition. Matched sample pairs of crystalline and amorphous Cu-Ti alloys were subjected to identical test conditions and tested to failure. It was found that the amorphous alloys tested show approximately one order of magnitude improved resistance to electromigration compared to their crystalline counterparts. The improved performance is attributed to the absence of grain boundary migration paths in the amorphous samples. These findings are consistent with earlier work that showed amorphous alloys to be effective diffusion barriers in thin-film metallization systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100382
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  • 9
    Electronic Resource
    Electronic Resource
    Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1874-1876 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O7−x, can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant (ε(approximately-equal-to)25) and low dielectric losses. Epitaxial YBa2Cu3O7−x films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100485
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  • 10
    Electronic Resource
    Electronic Resource
    Special grain boundaries in YBa2Cu3O7 (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2344-2345 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The orientation distribution produced in strings of YBa2Cu3O7−x often referred to as 123, crystals produced from a melt is not random. The individual crystals are kinematically free to rotate during the coalescence process and it is found that coincidence site lattice misorientations are selected. This observation suggests that grain boundaries in 123 have structures related to those in other crystalline materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100520
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