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  • 1
    Electronic Resource
    Electronic Resource
    Heteroepitaxy of GaAs on Si and Ge using alternating, low-energy ion beams (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1439-1441 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystalline GaAs films have been grown epitaxially on silicon and germanium substrates at 400 °C by direct deposition of alternating 69Ga and 75As layers from electromagnetically switched low-energy ion beams. Positive gallium and arsenic ions were extracted simultaneously from a single ion source and mass analyzed prior to deceleration to a controlled deposition energy of 30 or 40 eV. Atomic layers of gallium and arsenic were deposited alternately by switching the analyzing magnetic field repeatedly to select either the 69Ga+ or 75As+ species. The structure and composition of the resulting layers have been characterized by cross-section transmission electron microscopy and ion channeling/backscattering spectrometry. The best crystal quality was obtained for a GaAs layer deposited on Ge using a 30 eV beam. This layer gave an ion channeling minimum yield of ≈6%. These results demonstrate the feasibility of growing isotopically pure, single-crystal compound semiconductor layers at relatively low temperatures by deposition from alternating, fully ionized, low-energy beams.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100690
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  • 2
    Electronic Resource
    Electronic Resource
    New model for damage accumulation in Si during self-ion irradiation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2503-2505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the damage produced by self-ion implantation in Si on dose is determined and is shown to exhibit two distinct behaviors: an initial sublinear increase of damage with dose, followed by a period of greatly accelerated growth. Ion backscattering analysis using both single- and double-alignment channeling measurements is used to determine the distribution of damage in the samples. The nature of the damage is determined from its thermal annealing behavior and differences in the spectra recorded in the two channeling configurations. Damage is found to consist predominantly of two components: simple defects, such as divacancies, and regions of amorphous Si. The behavior of these components is shown to be divergent at the fluence which separates the two different growth regimes. A model is proposed which considers the amorphization process in Si as a critical-point phenomenon, one in which the onset of amorphization leads to a cooperative behavior among the various types of damage resulting in a greatly accelerated transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102011
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  • 3
    Electronic Resource
    Electronic Resource
    Analysis of C films formed on single-crystal Cu by ion implantation and laser annealing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3485-3491 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal Cu has been ion implanted with C to fluences of 1×1018/cm2 followed by laser annealing with nanosecond pulses from an excimer laser and subsequently etched in dilute nitric acid. Raman spectroscopy, Rutherford backscattering, and electron microscopy have been used to identify the distribution and morphology of the carbon at different stages of sample processing. Polycrystalline graphite and amorphous carbon films are typically produced over a wide range of processing conditions; well-ordered graphite can be formed as well. Small Cu crystallites are seen in areas where the etch lifted the C films off the substrate. However, extensive analysis by Raman spectroscopy and electron microscopy provides no evidence for the formation of the diamond phase of carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351425
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  • 4
    Electronic Resource
    Electronic Resource
    Atomic-resolution chemical analysis using a scanning transmission electron microscope (2006)
    [s.l.] : Nature Publishing Group
    Nature 444 (2006), S. 235-235 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Nature 366, 143–146 (1993) In this Letter, we reported that it was possible to undertake chemical analysis with atomic resolution in a scanning transmission electron microscope—a capability that has subsequently been demonstrated ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature05262
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  • 5
    Electronic Resource
    Electronic Resource
    Enhanced current transport at grain boundaries in high- T c superconductors (2005)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 435 (2005), S. 475-478 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Large-scale applications of high-transition-temperature (high-T c) superconductors, such as their use in superconducting cables, are impeded by the fact that polycrystalline materials (the only practical option) support significantly lower current densities than single ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature03644
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  • 6
    Electronic Resource
    Electronic Resource
    Direct observation of a local thermal vibration anomaly in a quasicrystal (2003)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 421 (2003), S. 347-350 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Quasicrystals have long-range order with symmetries that are incompatible with periodicity, and are often described with reference to a higher-dimensional analogue of a periodic lattice. Within the context of this ‘hyperspace’ crystallography, lattice dynamics of quasicrystals can ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature01337
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  • 7
    Electronic Resource
    Electronic Resource
    Z-Contrast Transmission Electron Microscopy: Direct Atomic Imaging of Materials (1992)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 22 (1992), S. 171-195 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.22.080192.001131
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  • 8
    Electronic Resource
    Electronic Resource
    Polytypoid structures in annealed In2O3–ZnO films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2585-2587 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic-resolution Z-contrast images demonstrate unambiguously that the annealed, metalorganic chemical vapor deposition derived transparent In2O3–ZnO films have a polytypoid microstructure, consisting of ZnO slabs of variable width separated by single In–O octahedral layers. These In–O layers induce a polarity inversion in the two adjacent ZnO layers, which is reversed again by a mirror domain boundary inside each ZnO slab. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122513
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  • 9
    Electronic Resource
    Electronic Resource
    Z-contrast investigation of the ordered atomic interface of CoSi2/Si(001) layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3608-3610 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The atomic structure of mesotaxial CoSi2/Si(001) interfaces has been investigated by Z-contrast scanning transmission electron microscopy. The directly interpretable images reveal a 2×1 ordered structure at the interface, which is clearly seen to involve a doubling of the periodicity of the interfacial Co atoms. From these high-resolution images, we deduce a new structure model for the CoSi2/Si(001) interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111214
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  • 10
    Electronic Resource
    Electronic Resource
    Damage and deuterium trapping in highly-oriented pyrolytic graphite (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2225-2233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work the buildup of damage due to deuterium implantation in highly-oriented pyrolytic graphite (HOPG) is investigated. HOPG was implanted with 10–30 keV D3+ at different target temperatures between room temperature and 773 K with fluences from 1014 to 1018 D/cm2. Subsequently, the damage due to the implantation and the retained deuterium were measured by Rutherford backscattering (RBS) in a channeling direction (RBSc) and by the D(3He, p)α nuclear reaction analysis (NRA), respectively. The damage of selected samples was additionally observed with transmission electron microscopy (TEM). The initial trapping efficiency is unity in the whole temperature and energy range. The maximum retention of the deuterium, however, depends on the temperature and implantation energy. The damage in HOPG measured with RBSc starts to saturate at 5×1015 D/cm2 (295 K) and 1.3×1017 D/cm2 (773 K). Both fluences are well below the fluence at which amorphization is observed in TEM.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353126
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