ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
PbTe films on GaAs substrates were grown by metalorganic chemical vapor deposition for the first time, at substrate temperatures as low as 300 °C. Films grown directly on GaAs below a substrate temperature of 400 °C showed (111) orientation on (100) GaAs and (100) orientation on (111) GaAs. However, above 400 °C on GaAs and on CdTe buffer layers, the films followed the orientation of GaAs and CdTe, respectively. Hall measurements showed n-type conductivity in PbTe films grown directly on GaAs regardless of the Te/Pb input gas ratio and substrate temperature. The conductivity type of PbTe films grown on CdTe buffer layers depended on the input gas ratio of Te/Pb. The resistivity measured by Hall measurement was higher than that determined from infrared data, suggesting microcracks in the films.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350421
