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  • 1
    Electronic Resource
    Electronic Resource
    Rapid heteroepitaxial growth of Ge films on (100) GaAs by pulsed supersonic free-jet chemical beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1008-1010 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very high epitaxial growth rates (0.25 μm/s), not attainable by conventional vapor phase film growth methods, have been obtained using a pulsed supersonic free jet to supply digermane (Ge2H6) for thermal decomposition at a heated (100)GaAs surface. Double-crystal x-ray diffractometry and scanning electron microscopy show that highly planar, smooth, and commensurate epitaxial Ge films are grown on (100)GaAs using gas pulses of 250 ms duration at 1–3 atm (0.1–0.3 MPa) pressure for substrate temperatures of 480–680 °C. It is believed that the very high growth rates effectively "freeze'' the Ge-GaAs interface resulting in minimal interfacial diffusion and reduced incorporation of impurities from the surrounding growth environment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102261
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  • 2
    Electronic Resource
    Electronic Resource
    Strong polarization enhancement in asymmetric three-component ferroelectric superlattices (2005)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 433 (2005), S. 395-399 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Theoretical predictions—motivated by recent advances in epitaxial engineering—indicate a wealth of complex behaviour arising in superlattices of perovskite-type metal oxides. These include the enhancement of polarization by strain and the possibility of asymmetric properties in ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature03261
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  • 3
    Electronic Resource
    Electronic Resource
    Structure and optical properties of amorphous diamond films prepared by ArF laser ablation as a function of carbon ion kinetic energy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2591-2593 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous carbon films with variable sp3 content were produced by ArF (193 nm) pulsed laser deposition. Electron energy loss spectroscopy and spectroscopic ellipsometry were employed to systematically study changes in the bonding and optical properties of the carbon films as a function of the kinetic energy of ablated C ions, which was measured using an ion probe. The measurements reveal that the films with the most diamond-like properties are obtained at the C ion kinetic energy of ∼90 eV. In contrast to measurements made as a function of laser fluence, ion probe measurements of kinetic energy are a convenient as well as more accurate and fundamental method for monitoring deposition conditions, with the advantage of being readily transferable for interlaboratory comparisons. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122515
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  • 4
    Electronic Resource
    Electronic Resource
    The adhesion of metallic films to laser-irradiated alumina (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5176-5179 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The adhesion strength of copper and nickel films deposited onto polycrystalline alumina (Al2O3) substrates is greatly increased by pulsed ultraviolet excimer (XeCl, 308 nm) laser irradiation of the alumina prior to metal-film deposition. Adhesion enhancement occurs for pulsed-laser energy densities, Ed, both below and above alumina's melting threshold (Edth∼0.7 J/cm2). Cross-section transmission electron micrographs of alumina irradiated at Ed(approximately-greater-than) Edth reveal an outer amorphous layer 40–60 nm thick that is formed during the rapid solidification process that follows pulsed-laser melting. Our results for gold, copper, and nickel films demonstrate that several factors contribute to metal-alumina bonding: (1) the chemical nature of the metal, as indicated by quite different adhesion strengths of sputter-deposited metals on unirradiated alumina substrates: 0.1 MPa for Au, 13 MPa for Cu, and 32 MPa for Ni; (2) the type and extent of laser-generated disorder/damage, since for gold significant bonding enhancement is obtained only if pulsed-laser melting of the alumina occurs; and (3) the irradiation atmosphere, as the adhesion strength of these metals to alumina is greatest if pulsed-laser irradiation is performed in an oxidizing atmosphere. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359264
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial ZnS films grown on GaAs (001) and (111) by pulsed-laser ablation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7818-7822 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed KrF (248 nm) laser ablation of a polycrystalline ZnS target has been used to grow very smooth and carbon-free, epitaxial ZnS thin films on GaAs (001) and (111). Films were grown at temperatures of 150–450 °C, using a rotating substrate heater and deposition geometry that produces highly uniform film thickness, without nucleation or surface-roughening problems. X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) show that the ZnS films are fully epitaxial (in-plane aligned). Films grown at the optimum temperature of 325 °C have x-ray rocking curve widths that are indistinguishable from molecular-beam-epitaxy-grown ZnS/GaAs films of the same thickness. Rutherford backscattering spectrometry and HRTEM show that in films ∼275 nm thick, the ∼150 nm nearest the GaAs-ZnS interface is highly faulted, due to the ∼4.1% lattice mismatch and/or the low ZnS stacking fault energy, but the upper ∼125 nm is much less defective. The anisotropy of the ZnS epitaxial growth rate between the GaAs (001) and GaAs (111) surfaces was found to be slightly temperature dependent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353956
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  • 6
    Electronic Resource
    Electronic Resource
    Y-Ba-Cu-O thin films grown on rigid and flexible polycrystalline yttria-stabilized zirconia by pulsed laser ablation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 223-227 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ growth of highly oriented YBa2Cu3O7−x thin films (200–500 nm in thickness) has been obtained by pulsed KrF (248 nm) laser ablation on both rigid and flexible randomly oriented polycrystalline yttria-stabilized zirconia substrates. It is shown that c-axis-perpendicular YBa2Cu3O7−x films with a mosaic spread of only 1.0° can be grown on these randomly oriented polycrystalline substrates. Superconducting thin films were obtained with Tc(R=0)∼89 K on well-polished substrates. For the films deposited on the flexible substrates, the superconducting Tc is not degraded by repeated bending of the flexible substrate/film composite over a 2.25-cm-radius arc although the normal-state resistivity increases slightly, suggesting the creation of microcracks. The YBa2Cu3O7−x films grown on rigid polycrystalline yttria-stabilized zirconia substrates have a critical current density Jc(H=0)∼1400 A/cm2 at 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347121
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  • 7
    Electronic Resource
    Electronic Resource
    Alignment mechanism of carbon nanofibers produced by plasma-enhanced chemical-vapor deposition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2970-2972 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report experimental evidence showing a direct correlation between the alignment of carbon nanofibers (CNFs) prepared by plasma-enhanced chemical-vapor deposition and the location of the catalyst particle during CNF growth. In particular, we find that CNFs that have a catalyst particle at the tip (i.e., growth proceeds from the tip) align along the electric-field lines, whereas CNFs with the particle at the base (i.e., growth proceeds from the base) grow in random orientations. We propose a model that explains the alignment process as a result of a feedback mechanism associated with a nonuniform stress (part tensile, part compressive) that is created across the interface of the catalyst particle with the CNF due to electrostatic forces. Furthermore, we propose that the alignment seen recently in some dense CNF films is due to a crowding effect and is not directly the result of electrostatic forces. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415411
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of spatial separation on the growth of vertically aligned carbon nanofibers produced by plasma-enhanced chemical vapor deposition (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 476-478 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vertically aligned carbon nanofibers (VACNFs) with vastly different spacing were grown by catalytically controlled dc glow discharge chemical vapor deposition. Both densely packed VACNFs and essentially isolated VACNFs were studied using scanning electron microscopy and x-ray energy dispersive spectroscopy. The morphology and chemical composition of isolated VACNFs were found to have a strong dependence upon the growth conditions, in particular on the C2H2/NH3 gas mixture used. This is attributed to the sidewalls of isolated VACNFs being exposed to reactive species during growth. In contrast, the sidewalls of densely packed VACNFs were shielded by the neighboring VACNFs, so that their growth occurred mainly in the vertical direction, by diffusion of carbon through the catalyst nanoparticle and subsequent precipitation at the nanofiber/nanoparticle interface. These striking differences in the growth process result in the formation of flattened carbon nanostructures (carbon nanotriangles) and also are quite important for the realization of VACNF-based devices. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1433905
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  • 9
    Electronic Resource
    Electronic Resource
    Shaping carbon nanostructures by controlling the synthesis process (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1178-1180 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ability to control the nanoscale shape of nanostructures in a large-scale synthesis process is an essential and elusive goal of nanotechnology research. Here, we report significant progress toward that goal. We have developed a technique that enables controlled synthesis of nanoscale carbon structures with conical and cylinder-on-cone shapes and provides the capability to dynamically change the nanostructure shape during the synthesis process. In addition, we present a phenomenological model that explains the formation of these nanostructures and provides insight into methods for precisely engineering their shape. Since the growth process we report is highly deterministic in allowing large-scale synthesis of precisely engineered nanoscale components at defined locations, our approach provides an important tool for a practical nanotechnology. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1395517
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  • 10
    Electronic Resource
    Electronic Resource
    Field-emission studies of smooth and nanostructured carbon films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1228-1230 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron field-emission measurements of carbon films prepared by pulsed-laser deposition (PLD) and hot-filament chemical-vapor deposition (HF-CVD) are reported. Smooth PLD carbon films, with both high- and low-sp3 contents, appear to be poor field emitters. In contrast, HF-CVD carbon exhibits very good field-emission properties, including the emission turn-on field as low as 9 V/μm, high emission site density, and excellent durability. In addition, HF-CVD was carried out at temperatures below 600 °C, compatible with the use of glass substrates. The promising field-emission properties of HF-CVD carbon are attributed to the nanostructured nature of this material. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124650
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