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  • 1
    Electronic Resource
    Electronic Resource
    Influence of the Anterior Pituitary on the Ageing Process in the Ovary (1959)
    [s.l.] : Nature Publishing Group
    Nature 183 (1959), S. 1155-1158 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] TWO alternative ways of defining and measuring the rate of ageing are open to us. The first is an actuarial analysis of the increasing vulnerability of an ageing population. The second is based on the individual, and attempts a causal analysis of the ageing process at a chosen level of biological ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/1831155a0
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  • 2
    Electronic Resource
    Electronic Resource
    Thermoelectric properties of CoSb3 and related alloys (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1013-1018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Seebeck, electrical, and thermal conductivity data are reported on CoSb3, and doped and undoped alloys of Co1−xIrxSb3−yAsy from 20 to 700 K. n-type semiconductors were obtained by doping with Ni, Te, or Pd, and the hole concentration in p-type samples was increased by substitution of Fe, Ru, Os, and Ge. An estimated maximum value for ZT of 0.6 (Z is the figure of merit) was found for a Te-doped (n-type) alloy at 700 K. For p-type alloys, the maximum value of ZT was found to be 0.3 at 550 K. Electrical and thermal transport data also are reported for CoAs3, RhSb3, and IrSb3. Most of the samples investigated were polycrystalline, but a few measurements on CoSb3 single crystals also are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360402
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  • 3
    Electronic Resource
    Electronic Resource
    Y-Ba-Cu-O thin films grown on rigid and flexible polycrystalline yttria-stabilized zirconia by pulsed laser ablation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 223-227 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ growth of highly oriented YBa2Cu3O7−x thin films (200–500 nm in thickness) has been obtained by pulsed KrF (248 nm) laser ablation on both rigid and flexible randomly oriented polycrystalline yttria-stabilized zirconia substrates. It is shown that c-axis-perpendicular YBa2Cu3O7−x films with a mosaic spread of only 1.0° can be grown on these randomly oriented polycrystalline substrates. Superconducting thin films were obtained with Tc(R=0)∼89 K on well-polished substrates. For the films deposited on the flexible substrates, the superconducting Tc is not degraded by repeated bending of the flexible substrate/film composite over a 2.25-cm-radius arc although the normal-state resistivity increases slightly, suggesting the creation of microcracks. The YBa2Cu3O7−x films grown on rigid polycrystalline yttria-stabilized zirconia substrates have a critical current density Jc(H=0)∼1400 A/cm2 at 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347121
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of the silicon on insulator film in bonded wafers by high resolution x-ray diffraction (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 787-789 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution x-ray diffraction (HRXRD) is proposed as a nondestructive tool for the characterization of the silicon on insulator (SOI) film in bonded wafers. Although the bonded stack may consist of many amorphous layers, the measured diffraction spectra only show the crystalline SOI layer, thus providing a direct measurement of the film. We have demonstrated that HRXRD is capable of accurately measuring the film thickness, the tilt of the film planes with respect to the substrate planes, and the rotation misalignment of the bonded film with respect to the carrier substrate. SOI films with thicknesses down to 30 nm were readily measured with accuracy better than 1%. It is shown that an angular separation between the layer and the substrate diffraction peaks is maintained due to an unintentional miscut which usually exists in the starting wafers used for bonding. This angular separation is unique to bonded wafers as opposed to separation by implanted oxygen (SIMOX) wafers where the layer and substrate peaks are nonseparable. Calculated diffraction spectra based on the kinematic approach showed excellent agreement with the measured diffraction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124513
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  • 5
    Electronic Resource
    Electronic Resource
    Flux creep in the Josephson mixed state of granular-oriented YBa2Cu3O7−x thin thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3183-3185 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A self-consistent critical current model in the Josephson mixed state is proposed for a series of c-oriented, polycrystalline and for a series of epitaxial triaxially oriented YBCO thin films. The flux pinning activation energies were experimentally determined from electrical transport measurements over a wide range of temperatures and were found to behave quite differently for the two types of granular film. With these activation energies applied to a superconductor-normal metal-superconductor weak-link system, thermally activated flux motion is shown to reproduce the experimentally measured critical current densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105754
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  • 6
    Electronic Resource
    Electronic Resource
    Linewidth dependence of critical current density in Y1Ba2Cu3O7 thin-film microbridges (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1129-1131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the dependence of the transport critical current density (Jc) on the width of Y1Ba2Cu3O7 thin-film microbridges with widths down to 2 μm has been made. No evidence of edge pinning, which leads to larger Jc's in narrower microbridges, was found. Due to the limitation in resolution of photolithography encountered in common usage, a tapered or radiation damaged edge was always present, which may have introduced a significant error in the cross section and hence in the estimation of Jc. By normalizing the critical current (Ic) to the room-temperature resistance of the microbridge, we can eliminate this mask-defined cross-sectional error.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106366
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  • 7
    Electronic Resource
    Electronic Resource
    High critical current densities in YBa2Cu3O7−x films on polycrystalline zirconia (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1164-1166 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth on polycrystalline yttria-stabilized zirconia substrates of YBa2Cu3O7−x films with Jc (77 K)=11 000 A/cm2 and Jc (4.2 K)=122 000 A/cm2 by pulsed laser ablation. These Jc values are among the highest reported for YBa2Cu3O7−x on any polycrystalline substrate and approach the intrinsic upper limit for films with large-angle grain boundaries, as indicated by recent bicrystal experiments. We find that the substrate temperature during film growth is most important in obtaining high Jc polycrystalline films. Although the magnetic field dependence of Jc indicates the presence of weak links, the behavior of Jc (4.2 K, H) suggests that a percolative path consisting of low-angle grain boundaries exists in the films, resulting in Jc (4.2 K, 60 kOe)=4100 A/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104226
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