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  • 1
    Electronic Resource
    Electronic Resource
    Y-Ba-Cu-O thin films grown on rigid and flexible polycrystalline yttria-stabilized zirconia by pulsed laser ablation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 223-227 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ growth of highly oriented YBa2Cu3O7−x thin films (200–500 nm in thickness) has been obtained by pulsed KrF (248 nm) laser ablation on both rigid and flexible randomly oriented polycrystalline yttria-stabilized zirconia substrates. It is shown that c-axis-perpendicular YBa2Cu3O7−x films with a mosaic spread of only 1.0° can be grown on these randomly oriented polycrystalline substrates. Superconducting thin films were obtained with Tc(R=0)∼89 K on well-polished substrates. For the films deposited on the flexible substrates, the superconducting Tc is not degraded by repeated bending of the flexible substrate/film composite over a 2.25-cm-radius arc although the normal-state resistivity increases slightly, suggesting the creation of microcracks. The YBa2Cu3O7−x films grown on rigid polycrystalline yttria-stabilized zirconia substrates have a critical current density Jc(H=0)∼1400 A/cm2 at 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347121
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  • 2
    Electronic Resource
    Electronic Resource
    Blue photoluminescence in ZnGa2O4 thin-film phosphors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1653-1656 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth and properties of luminescent ZnGa2O4 thin films using pulsed laser ablation has been investigated. As-deposited films on glass and (100) MgO substrates exhibit blue-white photoluminescence with a broad emission band under ultraviolet excitation. In situ epitaxial films obtained on single crystal (100) MgO substrates possess enhanced luminescent intensity as compared to polycrystalline films on glass substrates. The enhanced luminescence in epitaxial films presumably reflects lower defect densities due to growth on low energy surfaces. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287228
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  • 3
    Electronic Resource
    Electronic Resource
    Photo- and cathodoluminescence characteristics of blue-light-emitting epitaxial Sr2CeO4 thin-film phosphors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 678-680 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Orthorhombic epitaxial Sr2CeO4 thin-film phosphors were grown on (100) SrTiO3 and yttria-stabilized-zirconia (YSZ) single crystal substrates with epitaxial relationships of (100) [010]Sr2CeO4//(100)[010]SrTiO3 and (100)[010]Sr2CeO4//(100)[011]YSZ, respectively. As-deposited films exhibit a broadband photoluminescence (PL) emission, peaking at about 477–481 nm with a maximum cathodoluminescence (CL) intensity at about 465 nm. Enhanced PL intensity was observed for the films deposited on (100) YSZ and SrTiO3 substrates as compared to deposits on c-plane sapphire substrates, correlating with improved intragranular crystallinity and reducing defects via epitaxy. Postannealing in air significantly enhanced both of the PL and CL intensities. Luminous efficiency of 0.14 lm/W at 1 kV and 22 μA/cm2 was observed for a 2-μm-thick film annealed at 1000 °C in air. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127083
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  • 4
    Electronic Resource
    Electronic Resource
    Enhanced photoluminescence in epitaxial ZnGa2O4:Mn thin-film phosphors using pulsed-laser deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3155-3157 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth and properties of ZnGa2O4:Mn thin-film phosphors on single crystal substrates using pulsed-laser deposition were investigated. Epitaxial film properties were compared to polycrystalline films deposited on glass substrates. Green photoluminescence was observed for as-deposited films with no postannealing required. Enhanced luminescent intensity in the epitaxial films was observed as compared to randomly oriented polycrystalline films, suggesting that grain boundaries and grain alignment strongly influence the luminescent properties. The ratio of Zn/Ga in the films also affected photoluminescence properties, with strong green emission observed in Zn-deficient films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124095
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  • 5
    Electronic Resource
    Electronic Resource
    Enhanced superconducting properties in ultrathin YBa2Cu3O7−δ layers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1432-1434 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The superconducting properties of ultrathin c-axis-oriented YBa2Cu3O7−δ(YBCO) layers can be significantly enhanced by use of more conductive buffer and cap layers. In particular, Pr0.5Ca0.5Ba2Cu3O7−δ/YBCO/Pr0.5Ca0.5Ba5 Cu3O7−δ trilayer structures, with YBCO layer thickness as small as 1 unit cell, have superior transport properties to PrBa2Cu3O7−δ/YBCO/PrBa2Cu3O7−δ structures, including an increase in Tc and a narrower superconducting transition. The enhanced superconducting properties that result from using Ca-(hole) doped buffer and cap layers may be a result of a diminished perturbation of the order parameter at growth-related steps in the electrical continuity of the YBCO layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109648
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  • 6
    Electronic Resource
    Electronic Resource
    High critical current densities in YBa2Cu3O7−x films on polycrystalline zirconia (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1164-1166 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth on polycrystalline yttria-stabilized zirconia substrates of YBa2Cu3O7−x films with Jc (77 K)=11 000 A/cm2 and Jc (4.2 K)=122 000 A/cm2 by pulsed laser ablation. These Jc values are among the highest reported for YBa2Cu3O7−x on any polycrystalline substrate and approach the intrinsic upper limit for films with large-angle grain boundaries, as indicated by recent bicrystal experiments. We find that the substrate temperature during film growth is most important in obtaining high Jc polycrystalline films. Although the magnetic field dependence of Jc indicates the presence of weak links, the behavior of Jc (4.2 K, H) suggests that a percolative path consisting of low-angle grain boundaries exists in the films, resulting in Jc (4.2 K, 60 kOe)=4100 A/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104226
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  • 7
    Electronic Resource
    Electronic Resource
    Managing benefits from information technology (1995)
    Bradford : Emerald
    Information management & computer security 3 (1995), S. 29-35 
    Details
    ISSN: 0968-5227
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Computer Science
    Notes: Despite mounting evidence that information technology plays anincreasingly fundamental role in formulating strategy, there is growingunease in management circles that IT investments are falling short oftheir promise.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1108/09685229510793022
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  • 8
    Electronic Resource
    Electronic Resource
    Computers and hospital management (1977)
    Springer
    Journal of medical systems 1 (1977), S. 187-203 
    Details
    ISSN: 1573-689X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract The most significant management development of the 20th Century—the computer—is not being used effectively by hospital management in their hour of greatest need. Why? What can be done?
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02285286
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial Growth and Luminescent Properties of Mn2+-Activated ZnGa2O4 Films (2000)
    Springer
    Journal of electroceramics 4 (2000), S. 293-297 
    Details
    ISSN: 1573-8663
    Keywords: pulsed laser deposition ; luminescence ; epitaxial ; ZnGa2O:4Mn ; thin-film phosphors
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The epitaxial growth and properties of Mn2+-doped ZnGa2O4 thin films on various single crystal substrates using pulsed laser deposition were investigated. Control of Zn/Ga stoichiometry required the use of a mosaic ZnGa2O4/ZnO ablation target to compensate for Zn loss due to evaporation. The photoluminescent intensity was a strong function of the Zn/Ga ratio, and also correlated with changes in the surface morphology. Superior photoluminescent intensity was attained from slightly Zn-deficient films which exhibit distinctive worm-like surface features. Enhanced photoluminescent intensity was observed in epitaxial films as compared to randomly-oriented polycrystalline deposits on glass substrates, suggesting an adverse effect of grain boundaries on luminescence properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009946105898
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