ISSN:
1573-8663
Keywords:
pulsed laser deposition
;
luminescence
;
epitaxial
;
ZnGa2O:4Mn
;
thin-film phosphors
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The epitaxial growth and properties of Mn2+-doped ZnGa2O4 thin films on various single crystal substrates using pulsed laser deposition were investigated. Control of Zn/Ga stoichiometry required the use of a mosaic ZnGa2O4/ZnO ablation target to compensate for Zn loss due to evaporation. The photoluminescent intensity was a strong function of the Zn/Ga ratio, and also correlated with changes in the surface morphology. Superior photoluminescent intensity was attained from slightly Zn-deficient films which exhibit distinctive worm-like surface features. Enhanced photoluminescent intensity was observed in epitaxial films as compared to randomly-oriented polycrystalline deposits on glass substrates, suggesting an adverse effect of grain boundaries on luminescence properties.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1009946105898
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